Zoom Meeting ID: 943 9886 3538; Password: 301782

The isolation of a growing number of two-dimensional (2D) materials has inspired worldwide efforts to integrate distinct 2D materials into van der Waals (vdW) heterostructures. While a tremendous amount of research activity has occurred in assembling disparate 2D materials into “all-2D” van der Waals heterostructures and making outstanding progress on fundamental studies, practical applications of 2D materials will require a broader integration strategy. I will present our ongoing and recent work on integration of 2D materials with 3D electronic materials to realize logic switches and memory devices with novel functionality that can potentially augment the performance and functionality of Silicon technology. First, I will present our recent work on gate-tunable diode1 and tunnel junction devices2 based on integration of 2D chalcogenides with Si and GaN. Following this I will present our recent work on non-volatile memories based on Ferroelectric Field Effect Transistors (FE-FETs) made using a heterostructure of MoS2/AlScN3, 4 and also introduce our work on Ferroelectric Diode devices also based on thin AlScN.5 

If time permits, I will also cover the subject of strong light-matter coupling in excitonic 2D semiconductors, including formation of hybrid states in multilayers and superlattices.6-9 I will further present our recent work on giant linear dichroism in layered anti-ferromagnetic semiconductor FePS310 as well as scalable, localized quantum emitters from strained 2D semiconductors.11

References:

1.             Miao, J.; et al. …Jariwala, D. Nano Letters 2020, 20, (4), 2907-2915.

2.             Miao, J.; et al. ….Jariwala, D. Nature Electronics 2021, (to appear).

3.             Liu, X.; et al…..Olsson, R. H.; Jariwala, D. Nano Letters 2021, 21, (9), 3753-3761.

4.             Kim, K.-H.;et al…. Olsson, R. H.; Jariwala, D. arXiv preprint arXiv:2201.02153 2022.

5.             Liu, X.; et al. ….Olsson III, R.; Jariwala, D. Applied Physics Letters 2021,118, (20), 202901.

6.             Anantharaman, S. B.; Jo, K.; Jariwala, D. ACS Nano 2021.

7.             Kumar, P.; et al…..Jariwala, D. Nature nanotechnology 2022, 17 182–189.

8.             Anantharaman, S. B.; et al…. Jariwala, D. Nano Letters 2021, 21, (14), 6245-6252.

9.             Zhang, H.; et al…..Jariwala, D. Nature Communications 2020, 11, (1), 3552.

10.          Zhang, H.; et al….Jariwala, D. Nature Photonics 2022, 16, 311-317.

11.          Kim, G.; et al…...Jariwala, D. ACS Nano 2022, 10.1021/acsnano.2c02974.

Biography: Deep Jariwala is an Assistant Professor in the Department of Electrical and Systems Engineering at the University of Pennsylvania (Penn). Deep completed his undergraduate degree in Metallurgical Engineering from the Indian Institute of Technology Banaras Hindu University and his Ph.D. in Materials Science and Engineering at Northwestern University. Deep was a Resnick Prize Postdoctoral Fellow at Caltech before joining Penn to start his own research group. His research interests broadly lie at the intersection of new materials, surface science and solid-state devices for computing, opto-electronics and energy harvesting applications in addition to the development of correlated and functional imaging techniques. Deep’s research has been widely recognized with several awards from professional societies, foundations and funding agencies most notable ones being the Sloan Fellowship, IEEE Photonics Society Young Investigator Award as well as the IUPAP young scientist prize in Semiconductor Physics and has been cited > 15000 times.

E-mail: dmj@seas.upenn.edu

Website: jariwala.seas.upenn.edu