Congratulations to PhD candidate Asir Intisar Khan for receiving Best Student Paper Award, 2022 IEEE Symposium on VLSI Technology and Circuits, for "First Demonstration of Ge₂Sb₂Te₅-Based Superlattice Phase Change Memory with Low Reset Current Density(~3 MA/cm²) and Low Resistance Drift (~0.002 at 105℃)."

Asir's research effort and vision encompass exploring novel materials and their functionalities to enable energy-efficient memory, computing devices and interconnects for 3D heterogeneous integration. His research work has enabled the lowest-to-date switching current density in phase-change memory technology and has been featured in Forbes Magazine and IEEE Spectrum. Asir is advised by Professor Eric Pop.

Please join us in congratulating Asir and the other authors: Christopher Perez (Stanford), Xiangjin Wu (Stanford), Byoungjun Won (Ajou University), Kangsik Kim (Ulsan National Institute of Science & Tech), Heungdong Kwon (Stanford), Pranav Ramesh (Stanford), Kathryn M. Neilson (Stanford), Mehdi Asheghi (Stanford), Krishna Saraswat (Stanford), Zonghoon Lee (Ulsan National Institute of Science & Tech), Il-Kwon Oh (Ajou University), H.-S. Philip Wong (Stanford), Kenneth E. Goodson (Stanford), and Eric Pop (Stanford).