Professor Srabanti Chowdhury received the 2025 International Symposium on Compound Semiconductors (ISCS) Quantum Devices Award "for pioneering contributions to engineered thermal interfaces that break the phonon mismatch diffusion limit between Diamond and semiconductors and to vertical power devices in GaN.”

The Quantum Devices Award was initiated in 2000. The recipients have been selected for pioneering contributions to the fields of compound semiconductor devices and quantum nanostructure devices which made a major scientific or technological impact in the past 20 years. The award was established by Fujitsu Quantum Devices Ltd. The Quantum Devices Award is currently sponsored by the Japanese ISCS Committee.

Srabanti's device research with wide bandgap and ultra-wide bandgap materials focuses on power and RF electronics applications, with an emphasis on energy efficiency and power density at the device level that can be translated to system-level innovation. She translated the CAVET technology to industry in 2024, after almost 16 years of research. Since 2013, she has expanded her research to diamond materials — both as semiconductors and for thermal management — developing low- temperature growth processes for device integration. Her work on achieving record-low thermal boundary resistance between diamond and with GaN using SiC interlayer, was recognized with the Technical Excellence Award from the Semiconductor Research Corporation (SRC) in 2023. Since 2020, she has broadened her thermal research to include Silicon, demonstrating large benefits through Diamond integration. She is a Fellow of the IEEE, and recipient of the DARPA Young Faculty Award, NSF CAREER Award, and AFOSR Young Investigator Program (YIP) Award in 2015; the Young Scientist Award at the International Symposium on Compound Semiconductors (ISCS) in 2016 for her research on CAVETs; and the Alfred P. Sloan Fellowship in Physics in 2020.

Please join us in congratulating Srabanti on this well-deserved award!