EE event

Special Seminar: 2D Materials for Memory and Computing

Prof. Daniele Ielmini, Politecnico di Milano
Host: Prof. Eric Pop, EE
Packard 202
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Abstract: 2D materials such as graphene, hBN and MoS2 are receiving strong interest for extreme Moore’s law scaling of transistors. Thanks to their atomic thickness, 2D materials are very promising also for flexible electronics for wearable sensors and systems. For all these applications, the development of memory devices is a key asset, to enable the growth of the ecosystem of a commercial 2D semiconductor technology. This talk will present recent advances in the field of 2D semiconductors for applications in memory and in-memory computing. Two types of memory devices will be presented, namely resistive switching memory (RRAM) based on hBN and memtransistor devices based on MoS2, combining the transistor and memory operation in one device. Two types of MoS2-based memtransistors will be shown, namely (i) an ion-based memristor where switching relies on the field-induced migration of Ag ions and (ii) a charge-based memristor. The application of these novel memtransistors for online training of neural networks and reservoir computing will be discussed.


Bio: Daniele Ielmini is a Full Professor at the Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Italy. He received the Laurea (cum laude) and Ph.D. from Politecnico di Milano in 1995 and 2000, respectively. He held visiting positions at Intel Corporation and Stanford University (2006). His research interests include non-volatile memories, such as phase change memory (PCM), resistive switching memory (RRAM), and spin-transfer torque magnetic memory (STT-MRAM), and novel circuits for in-memory computing and neuromorphic computing. He received the Intel Outstanding Researcher Award in 2013, the ERC Consolidator Grant in 2014, and the IEEE-EDS Paul Rappaport Award in 2015. He is a Fellow of the IEEE.