About the talk: Advancements in metallization and interconnect technology are crucial for enhancing performance, power efficiency, and scaling in modern semiconductor devices. This talk, from the perspective of a wafer processing equipment supplier, will delve into the evolution of materials and processes that enable next-generation interconnects. It will cover shifts to metals like cobalt, ruthenium, and molybdenum, as well as changes in integration and packaging with backside power and subtractive metallization. Key innovations in ALD metallization of Tungsten and Molybdenum in 3D NAND will be described. The discussion will also include advancements in metal deposition techniques such as area-selective deposition (ASD), new electrochemical processes, and pulsed laser deposition (PLD), addressing challenges in resistance-capacitance scaling, reliability, and specialty applications. Additionally, cost-effective pitch scaling through the transition from wet to dry resist processes will be described. By bridging material science and equipment engineering, this talk will highlight the importance of collaboration across the semiconductor ecosystem to achieve the performance, manufacturability, and sustainability required for future advanced node.

About the speaker: Anand Murthy is the Vice President of Advanced Technology Integration within the Office of the CTO at Lam Research Corporation. Anand manages various process technology initiatives in Logic, Memory and 3DIC with several research consortia fostering strong integration and collaboration. Prior to joining Lam in 2024, Anand was an Intel Fellow with over 28 years of technical and leadership experience in advancing Moore's law of transistor scaling over 10 process nodes. Anand holds 320 U.S. (over 800 worldwide) patents granted for pioneering work in the fabrication of CMOS and HBT transistors based on Si, SiGe, Ge and III-V compound semiconductor materials. Anand graduated from University of Southern California with Ph.D. in Materials Science and Engineering in 1993.