Ph. D. STUDENTS and THESES
1. ERIC HELLMAN - "Hot Electron Resistance and Magnetoresistance in High Purity Gallium Arsenide", May 1987.
2. ALEX HARWIT - "Effects of Electric Fields on quantum Well Intersubband Transitions", October 1987.
3. JEFF ROSNER - "Structural Investigations of the Nucleation and Growth of Gallium Arsenide on Silicon Substrates", November 1987.
4. STEPHANIE KOCH - "Studies of the Nucleation and Growth of Gallium Arsenide Silicon by Molecular Beam Epitaxy", August 1988.
5. PAUL DE LA HOUSSAYE - "Characterization of Modulation-Doped Field-Effect Transistors with Gate Angstroms", September 1988.
6. GIDEON YOFFE - "Modulation of Light by Electronically Tunable Multi-Layer Optical Interference Devices", September 1988.
7. KANJI YOH - "Complementary Modulation-Doped Field Effect Transistors", September 1988.
8. ED L. WOLAK - "The Effects of Reduced Opto-Electronics Dimensionality and Elastic Scattering on the Current Voltage Characteristics of Resonant Tunneling Diodes", March 1989.
9. KEVIN LEAR - "Applications of Resonant Tunnel Diodes and Effects of a Novel Cathode", January 1990.
10. WON-SEONG LEE - "Thin Barrier Type AlGaAs/GaAs Heterojunction Bipolar Transistor Structure with Reduced Surface Effects", May 1990.
11. DARRELL HILL - "P-N-P Heterojunction Bipolar Transistors in AlGaAs/InGaAs/GaAs", May 1990.
12. DARRELL SCHLOM - "Molecular Beam Epitaxial Growth of Cuprate Superconductors and Related Phases", June 1990.
13. BYUNG-GOOK PARK - "Vertically Integrated Resonant Tunneling Diodes: Analysis, Characterizations, and Performance Optimization", August 1990.
14. TONY MA - "DC Study of AlGaAs/GaAs Heterojunction Bipolar Transistors Grown on Silicon", October 1990.
15. YI CHING PAO - "High Electron Mobility Transistors Built on MBE Grown InAlAs/InGaAs/Inp Heterostructures", December 1990.
16. PENG CHENG - "Novel Tunneling Barrier Designs for Resonant Tunneling Diodes", January 1991.
17. WILLIAM LIU - "Microwave and D.C. Studies of Npn and Pnp AlGaAs/GaAs Heterojunction Bipolar Transistors", February 1991.
18. ERIC LARKINS - "Light-Emitting Heterostructure Thyristors", March 1991.
19. BARDIA PEZESHKI - "Optimizations of Reflection Electro-Absorption Modulators", June 1991.
20. JAMES W. ADKISSON - "Monolithic Integration of Gallium Arsenide on Silicon and Silicon Devices for Optoelectronic Applications", June 1991.
21. DAMIAN COSTA - "Microwave and Low-Frequency Noise Characterization of Npn AlGaAs/GaAs Heterojunction Bipolar Transistors", December 1991.
22. TIMOTHY B. BOYKIN - "A Tight-Binding Approach to Resonant Tunneling Diode Simulation", June, 1992
23. KEN L. SHEPARD - "Electron Transport in Mesoscopic Conductors", June, 1992.
24. WINSTON SU-KEE FU - "Femtosecond and Quasi-Steady-State Optical Nonlinear Physics of GaAs/AlAs Type II Quantum Wells", August 1992.
25. JAE HOON KIM - "Plasmons and Optical Anisotropy of High Temperature Surperconductors", November 1992.
26. SUSAN MARIE LORD - ÒGrowth of High In Content InGaAs On GaAs Substrates for Optical ApplicationsÓ, June 1993.
27. SAM-DONG KIM – ÒStudies of the Structural Defects in Gallium Arsenide on Silicon Grown by Molecular Beam EpitaxyÓ, June 1993
28. HERMAN CHUNG-KANG CHUI - ÒMid-Infrared Light Generation by Nonlinear Optical Frequency Conversion in Intersubband InGaAs / AlGaAs Quantum WellsÓ, August 1994.
29. JAN PAUL ANTONI VAN DER WAGT - ÒReflection High-Energy Electron Diffraction During Molecular-Beam EpitaxyÓ, December 1994.
30. GUO-GANG ZHOU - ÒAn Investigation on the Anomalous Characteristics of InAlAs / InGaAs MODFETsÓ, January 1995.
31. JOHN ALFRED TREZZA - ÒOptimization of Quantum Well Optoelectronic ModulatorsÓ, February 1995.
32. KENNETH LOUIS BACHER - ÒImprovements Toward High-Efficiency Vertical-Cavity Surface-Emitting LasersÓ, June 1995.
33. BARTEV VARTANIAN - ÒNormal Incidence Intersubband Transitions in the Valence Band of InGaAs / AlGaAs Quantum WellsÓ, June 1995.
34. MARK WECKWERTH - ÒSingle Crystal Buried Metal Layers for Hot Electron DevicesÓ, January, 1996
35. CHANGHONG DAI - ÒDesign and Fabrication of AlGaAs/GaAs Heterojunction Bipolar Transistors with Sub-Micron Passivation LedgesÓ February 1996.
36. ROBERT LODENKAMPER - ÒSurface Emitting Second harmonic Generation: Vertical Resonance and Theory of EfficiencyÓ, November 1995.
37. CEM DURU…Z - ÒLow Temperature Transport in Quantum Dot ArraysÓ April 1996.
38. MIKE LARSON - ÒMicroelectromechanical Wavelength-Tunable Vertical-Cavity Light-Emitters and LasersÓ, May 1996.
39. GLENN SOLOMON - ÒInAs Quantum Dots by Strain-induced IslandingÓ, June 1996.
40. GUOYING DING - ÒDesign, Fabrication and High Speed Modulation of Vertical Cavity Surface Emitting LasersÓ, December 1996.
41. HEON LEE - ÒGrowth, Characterization and Processing of Gallium Nitride Films for High Temperature Electronics and Optoelectronics in Blue To UVÓ, December 1996.
42. JEFF POWELL - ÒSystems Aspects of Vertical Cavity Multi Quantum Well Optoelectronic ModulatorsÓ, March 1997.
43. DAXIN LIU – "Fabry-Perot Modulator and Vertically Integrated Coupled Cavity Light Emitting Diode", December 1997
44. BARBARA PALDUS – "From Pulsed to Continuous Wave Cavity Ring-Down Spectroscopy", May 1998
45. FRED SUGIHWO – ÒDesign and Fabrication of Wavelength Tunable Optoelectronic DevicesÓ, August, 1998
46. BAEGIN SUNG – "Quantum Well Above-Barrier States and Short Wavelength Intersubband Transitions in InGa/AlGaAs Quantum Wells", August 1998
47. ALAN MASSENGALE - "Collector-Up AlGaAs/GaAs Heterojunction Bipolar Transistors Using Oxidized AlAs for Current Confinement", August 1998
48. CHENG-YU HUNG – "Patterned Self-Assembly by Controlled Precipitation of Arsenic in Nonstoichiometric Gallium Arsenide", October 1998
49. CHRISTOPHER EBERT – "Quasi-Phasematched Waveguides for Infrared Nonlinear Optics Using GaAs/Ge/GaAs Heteroepitaxy", November 1998
50. DUNCAN STEWART – "Level Spectroscopy of a Quantum Dot", March 1999
51. LUIZ FRANCA-NETO – "Noise in High Electric Field Transport and Low Noise Field Effect Transistor Design: The Ergodic Method", May 1999
52. TZU-FANG HUANG – "Growth of III-V Nitrides and Buffer Layer Investigation by Pulsed Laser Deposition", July 1999
53. RENAN MILO - "Efficiency of Surface-Pumped Backward Optical Parametric Oscillators and Amplifiers in GaAs/AlGaAs", February 2000
54. ERJI MAO – "Semiconductor in-Line Fiber Devices for Optical Communications Systems", June, 2000
55. HONG LIU – "High Speed, Low Driving Voltage Vertical Cavity MQW Modulators for Optical Interconnect and Communication", April 2001
56. SYLVIA SPRUYETTE - "MBE Growth of Nitride-Arsenides for Long Wavelength Opto-Electronics", April 2001
57. WAYNE MARTIN - "Micromachined Tunable VCSELs for Wavelength Division Multiplexing Systems", June 2001
58. LIEVEN M. K. VANDERSYPEN – ÒExperimental Quantum Computation with Nuclear Spins in Liquid SolutionÓ, July, 2001
59. THIERRY PINGUET – ÒOrientation-Patterned Gallium Arsenide for Quasi-Phasematched Infrared Nonlinear OpticsÓ, March, 2002
60. CHIEN-CHUNG LIN – ÒSurface Micromachined Tunable Optoelectronic DevicesÓ, June, 2002.
61. VINCENT GAMBIN—ÒLong Wavelength Luminescence from GaInNAsSb on GaAsÓ, November, 2002
62.
WONILL HA – ÒLong Wavelength GaInNAs and GaInNAsSb Lasers on GaAsÓ
December, 2002
63. SERGUEI KOMARAOV – ÒPotential of Strain Induced Semiconductor Quantum Dots for Device Applications Ò, December, 2002
64. XINLAN ZHOU—ÒQuantum Logic Gate Construction and Quantum AlgorithmsÓ, December, 2002
65. XIAN LIU—ÒArsenic-Doping of Silicon by Molecular Beam EpitaxyÓ, May, 2003
66. MATTHIAS STEFFEN—ÒA Prototype Quantum Computer Using Nuclear Spins in Liquid SolutionÓ, JUNE, 2003
67. QIANG TANG—ÒSi Nanowires for Advanced Microelectronics: MBE Gas-Source growth and in situ DevicesÓ, July, 2003
68.
VIJIT SABNIS—ÒOptically-Controlled Electroabsorption Modulators for Future
Generation Optical NetworksÓ, December, 2003
69. XIN JIANG—ÒTunnel Based Spin Injection Devices for Semiconductor SpintronicsÓ, February, 2004
70. EVAN THRUSH—ÒIntegrated Fluorescence SensorÓ, December, 2004
71. VINCENZO
LORDI—Ò Band-Edge
Optical Properties of GaInNAs(Sb)
and the Relation to Atomic StructureÓ, December, 2004
72. LYNFORD GODDARD—Ò Characterization And Modeling of the Intrinsic Properties of 1.5µm GaInNAsSb-GaAs LasersÓ, March, 2005
73. MARK WISTEY—ÒGrowth Of 1.5 µm GaInNAsSb Vertical Cavity Surface Emitting Lasers by Molecular Beam EpitaxyÓ, March, 2005
74. TIHOMIR
GUGOV—Transmission Electron Microscopy Characterization of Long
Wavelength Dilute NitridesÓ, March, 2005
75. ZHIGANG
XIE—ÒMicrodisk cavity integration with indium arsenide quantum dots: From
as-grown to regrowthÓ, June, 2005
76. JUNXIAN FU—Ò Coherent Near Infrared Photodetection With Indium Gallium Arsenide Based Optoelectronic DevicesÓ, September, 2005
77. CHRIS COLDREN—Ò Group III-Arsenide-Nitride Based Long Wavelength Laser DiodesÓ, September, 2005
78. DAVID JACKREL—Ò InGaAs and GaInNAs(Sb) 1064 nm Photodetectors and Solar Cells on GaAs SubstratesÓ, December, 2005
79. ROGER WANG—ÒMagnetic Tunnel Spin Injectors for Spintronics Research and DevelopmentÓ, December, 2005
80. SETH BANK— ÒHigh-Performance 1.55 µm GaInNAsSb Lasers Grown on GaAsÓ, March, 2006
81. HOMAN YUEN—Ò Growth And Characterization of Dilute Nitride Antimonides for Long-Wavelength OptoelectronicsÓ, March, 2006
82. XIAOJUN YU— ÒMBE Growth Of III-V Materials with Orientation-Patterned Structures for Nonlinear OpticsÓ, March, 2006
83. HYUNSOO YANG—ÒMetal Spintronics: Tunneling Spectroscopy in Junctions with Magnetic and Superconducting ElectrodesÓ, March, 2006
84. YU-HSUAN KUO— ÒGermanium-Silicon Electroabsorption ModulatorsÓ, June, 2006
85. KE WANG— ÒA Carbon Nanotube Microelectrode Array for Neural StimulationÓ, June, 2006
86. LUIGI SCACCABAROZZI— ÒArtificially Birefringent Aluminum Gallium Arsenide/Aluminum Oxide-Based Submicron Waveguides and Resonant Cavities for Nonlinear OpticsÓ, June, 2006
87. ALIREZA KHALILI— ÒHybrid Semiconductor Fiber Lasers for TelecommunicationsÓ, August, 2006
88. MASAMITSU HAYASHI —Ò Current Driven Dynamics of Magnetic Domain Walls In Permalloy NanowiresÓ, December, 2006
89. REKHA RAJARAM—ÒStudy of Magnetism in Dilute Magnetic Semiconductors based on III-V NitridesÓ, March, 2007
90. RAFAEL ALDAZ—ÒTowards Monolithic Integration of Mode-Locked Vertical Cavity Surface Emitting LaserÓ, June, 2007
91. ZHILONG RAO—ÒHigh-Intensity Nano-Aperture Lasers For Near-field OpticsÓ, December, 2007
92. THOMAS T. LEE, ÒDevelopment of Integrated Semiconductor Optical Sensors for Functional Brain ImagingÓ, August, 2008
93. DONGHUN CHOI, ÒIII-V Semiconductor Growth on Ge/Si and Surface Passivation for CMOS TechnologyÓ, January, 2009
94. HOPIL BAE, — ÒGrowth of 1.5-1.55µm GaInNAsSb Lasers by Molecular Beam EpitaxyÓ, March, 2009
95. BARDEN SHIMBO— ÒFabrication of Lateral Oxide Barriers for Metal Single Electron TransistorsÓ, May, 2009
96. PAUL LIM— ÒLow-frequency Noise as a Characterization and Evaluation Tool for Advanced MOSFETsÓ, September, 2009
97. LI GAO— ÒSpin Polarized Current Phenomena In Magnetic Tunnel JunctionsÓ, September, 2009
98. KAI MA— ÒFast Photoconductive Materials for Wideband A/D Conversion and Monolithic Integration with CMOSÓ, December, 2009
99. JUN PAN—ÒCoherent Interactions in On-Chip Photonic-Crystal CavitiesÓ, May, 2010
100. CHENG-HAN YANG— Ò Ferromagnetism and Resistive Switching in MgO with Nitrogen DopingÓ, July, 2010
101. LARKHOON LEEM— ÒMagnetic Coupled Spin-Torque Device: Spin-Based Non-Volatile Logic Device and ApplicationsÓ, August, 2010
102. YIWEN RONG—ÒHigh Speed, Low Driving Voltage Vertical Cavity Germanium-Silicon Modulators For Optical InterconnectÓ, November, 2010
103. THOMAS OÕSULLIVAN—ÒImplantable Fluorescence Sensor For Continuous Molecular Monitoring In Live AnimalsÓ, November, 2010
104. YIJIE HUO—Ò Strained Ge And GeSn Band Engineering For Si Photonic Integrated CircuitsÓ, December, 2010
105. ANJIA GU—ÒTowards High Efficiency And Low Cost Nano-Structured Iii-V Solar CellsÓ, March, 2011
106. DAVID MILLER—ÒGallium Nitride Epitaxy by a Novel Hybrid VPE TechniqueÓ, June, 2011
107. ALTAMASH JANJUA— ÒTowards Monolithic Semiconductor Photonic Crystal Passively Mode Locked Laser For Two-Photon MicroscopyÓ, March, 2012
108. HAI LIN— ÒGrowth and Characterization of GeSn and SiGeSn Alloys for Optical InterconnectsÓ, May, 2012
109. JUSTIN BROCKMAN— ÒElectric Field-Induced Conductivity Switching In Vanadium Sesquioxide NanostructuresÓ, June, 2012
110. MEREDITH LEE— ÒTunable Photonic Crystal Biosensors For Portable Label-Free DiagnosticsÓ, June, 2012
111. ANGIE LIN— ÒAll-Epitaxial Orientation-Patterned Iii-V Semiconductors For Nonlinear OpticsÓ, June, 2012
112. LELE WANG— ÒPhotovoltaic Retinal ProsthesisÓ, June, 2012
113. SONNY VO— ÒNano-Aperture VCSELs for Near-field ApplicationsÓ, March 2013
114. TOMAS SARMIENTO— ÒGaAs-based 1550 nm GaInNAsSb LasersÓ, March 2013
115. DONG LIANG— ÒNanostructures In III-V Solar CellsÓ, March 2013
116. MINGYANG LI— ÒThe Effect Of Electrolyte Gating on Several Solid State SystemsÓ, March 2013
117. NAGA PHANI B AETUKURI— ÒThe Control Of Metal-Insulator Transition In Vanadium DioxideÓ, June 2013
118. SHUANG LI— ÒTopological Insulator And Magnetically Doped Topological Insulator Thin Films By Molecular Beam EpitaxyÓ, June 2013
119. TIMOTHY PHUNG—ÒControlling Injection And Propagation Of Domain Walls In Magnetic NanowiresÓ, December 2013
120. ROBERT CHEN—ÒGermanium-Tin: A Material and Technology for Group-IV PhotonicsÓ, June, 2014
121. ED FEI—ÒGe/SiGe Quantum Well Devices for Optical InterconnectsÓ, September, 2014