EE 216 Principles and Models of Semiconductor Devices

Advanced undergraduate/graduate-level course introducing the fundamentals of carrier generation, transport, recombination and storage in semiconductors. The physical principles of hte operation of the p-n junciton, metal-semiconductor contact, bipolar junction and heterojunction transistor, MOS capacitor, MOS and junction field-effect transistors and related devices, such as solar cells and CCDs. First-order device models that reflect physical principles and are useful for integrated-corcuit analysis and design. Prerequisites: EE 111 and 112 or equivalent, Autumn Quarter,   3 units    EE 216 Course Outline and Information

EE 243 Semiconductor Optoelectronic Devices

Advanced undergraduate/graduate-level course introducing operating principles and practical device features of semiconductor optoelectronic devices for communications and other applications. Review of relevant semiconductor physics and optical processes, semiconductor heterostructures, semiconductor optical detectors (including p-i-n, avalanche and MSM), light emitting diodes, electroabsorptive modulators (Franz-Keldysh, QCSE), electrorefractive (directional couplers, Mach-Zehnder), switches (SEEDs) and lasers ( edge-emitting and VCSELs). Prerequisites: Basic quantum mechanics, solid-state physics and lasers, e.g. EE 222, 228, 231 or equivalents, Winter Quarter,   3 units    EE 243 Course Outline and Information

EE 327 Properties of Semiconductor Materials

Modern semiconductor devices and integrated circuits are based upon the unique energy band, carrier transport and optical properties of semiconductor materials. This course will examine how these physical properties can be chosen and optimized for operation of semiconductor devices. Emphasis is on the quantum mechanical foundations of the properties of solids, energy bandgap engineering, semi-classical transport theory, semiconductor statistics, carrier scattering, electro-magneto transport effects, high field ballistic transport, Boltzmann transport equation, quantum mechanical transitions, optical absorption, and radiative and non-radiative recombination. Prerequisites: EE 216 and 228, Spring Quarter, alternates odd years, 3 units    EE 327 Course Outline and Information

EE 328, Physics of Advanced Semiconductor Devices

Study of the principles governing the operation of modern semiconductor devices. Examination of the underlying assumptions and approximations that are commonly made in analyzing devices. Emphasis is on the application of semiconductor physics to development of advanced semiconductor devices, such as heterojunctions, HJ-bipolar transistors, HJ-FETs, nano structures, tunneling, single electron transistor and photonic devices. Use of ATLAS and MEDICI 2-D Poisson solvers for simulation of ultra-small devices. Examples are related to up-to-date device research.Prerequisites: EE 216, Spring Quarter, alternates even years  3 units    EE 328 Course Outline and Information