Publication # 424

424. E. H. Edwards, R. M. Audet, E. T. Fei, S. A. Claussen, R. K. Schaevitz, E. Tasyurek, Y. Rong, T. I. Kamins, J. S. Harris, and D. A. B. Miller, "Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators," Opt. Express 20, 29164-29173 (2012)

We demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects. The devices operate via the quantum-confined Stark effect in Ge/SiGe quantum wells grown on silicon substrates by reduced pressure chemical vapor deposition. The strong electroabsorption contrast enables use of a moderate-Q asymmetric Fabry-Perot resonant cavity, formed using a film transfer process, which allows for operation over a wide optical bandwidth without thermal tuning. Extinction ratios of 3.4 dB and 2.5 dB are obtained for 3 V and 1.5 V drive swings, respectively, with insertion loss less than 4.5 dB. For 60 μm diameter devices, large signal modulation is demonstrated at 2 Gbps, and a 3 dB modulation bandwidth of 3.5 GHz is observed. These devices show promise for high-speed, low-energy operation given further miniaturization.

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