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355.
J. E. Roth, S. Palermo, N. C. Helman, D. P. Bour, D. A. B. Miller, and M. Horowitz, “An Optical Interconnect Transceiver at 1550 nm Using Low-Voltage Electroabsorption Modulators Directly Integrated to CMOS,” J. Lightwave Technol. 25, 3739 – 3747 (2007)
A low-voltage, 90-nm CMOS optical interconnect
transceiver operating at 1550-nm optical wavelength is presented.
This is the first demonstration of a novel optoelectronic modulator
architecture (the quasi-waveguide angled-facet electroabsorption
modulator) in a system. It features a simple electronic packaging
via flip-chip bonding to silicon. Devices have a broad optical bandwidth,
are arrayed two dimensionally, and feature surface normal,
spatially separated, and misalignment-tolerant optical ports. The
modulators are driven with a novel pulsed-cascode driver capable
of supplying an output-voltage swing of 2 V (twice the nominal
1-V CMOS supply) without overstressing thin-oxide core CMOS
devices. At the receiver side, a sensitivity of−15.2 dBm is obtained
with an integrating/double-sampling front end. The transceiver
includes clock generation and recovery circuitry that enables a
data serialization factor of five. At a maximum data rate of
1.8 Gb/s, the optical transmitter, receiver, and clocking circuitry
consume 12.6, 4.5, and 6.5 mW, respectively, for a total link electrical
power dissipation of 23.6 mW. To the best of our knowledge,
this is the first demonstration of an interconnect transceiver operating
at 1550 nm with a III–V output device directly integrated to
the CMOS.
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