||342. J. E. Roth, O. Fidaner, R. K. Schaevitz, E. H. Edwards, Y.-H. Kuo, T. I. Kamins, J. S. Harris, Jr., and D. A. B. Miller, “Optical modulator on Si employing Ge quantum wells,” OSA Annual Meeting “Frontiers in Optics” 2007, San Jose, CA, Sept. 2007, Paper FTuM1
We demonstrate the first electroabsorption modulator using the quantum-confined
Stark effect in Ge. For 10 V swing, the contrast ratio is 7.3 dB at 1457 nm, and exceeds 3 dB over
20 nm bandwidth.
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