Publication # 140

D. A. B. Miller "Comment on 'Optical bistability in self-electro-optic effect devices with asymmetric quantum wells' and on 'Novel configuration of self-electro-optic effect device based on asymmetric quantum wells', Applied Physics Letters 57, 1363-1365, (1990).

We report significant improvement in the optical switching times of symmetric self-electro-optic effect devices due to enhanced tunneling by using a 35 A barrier versus the previous 60 A barrier thick multiple quantum well GaAs/AlGaAs devices. Also, the voltage required for bistability was reduced from 10 V in the thick barrier devices to 3 V in the thin barrier devices with no apparent degradation in the contrast ratio.

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