Publication # 086

I. Bar-Joseph, D. S. Chemla, C. Klingshirn, D. A. B. Miller, J. M. Kuo, and T. Y. Chang, "Optical Reading of InGaAs Modulation Doped Field Effect Transistor" in "Picosecond Electronics and Optoelectronics II" ed. F. J. Leonberger, C. H. Lee, F. Capasso, and H. Morkoc, (Springer-Verlag, 1987) 143-146.

We present the first observation of absorption quenching in a semiconductor quantum well by electrical control of the carrier density. We have observed this novel effect at room temperature in a single modulation-doped InGaAs quantum well which was used as the conducting channel of a field effect transistor. The effect is extremely large and we have used it for direct optical determination of the state of the modulation doped field effect transistor (MODFET)

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