Nanoelectronic Devices and NanoSystems

Bent, Chowdhury, Dutton, Harris, Howe, Mitra, Nishi, Pianetta, Plummer, Pop, Saraswat, Wong, Wong

New and innovative materials, structures, process, and design technologies are explored for nanoelectronics, information technology, energy, environment, and biomedical applications. Examples include:

  • Machine learning, graph algorithms or graph analytics;
  • Silicon, germanium, and III-V compound semiconductor devices, metal gate/high-k MOS, and interconnects for nanoelectronics;
  • Device applications of new materials such as carbon (carbon nanotube, graphene), two-dimensional (2D) layered materials (e.g. MoS2, BN) and semiconductor nanowires;
  • Memory devices such as Flash, phase change memory, metal oxide resistive switching memory;
  • New fabrication technologies for scaling logic and memory devices into the nanometer regime, 3D-integrated circuits with multiple layers of heterogeneous devices, metal, and optical interconnections;
  • Compact modeling, technology computer aided design, and ab initio modeling of electronic materials and devices;
  • Magnetic nanotechnologies and information storage.

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S. Simon Wong

S. Simon Wong Professor

Allen 203 (4070)
Website

Xu, Mei Administrator

Allen 203 (4070)
650-498-0591
meixu@stanford.edu

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