Congratulations to Isha Datye and Alexander Gabourie on their winning poster, "Reduction of hysteresis in MoS2 transistors using pulsed voltage measurements".
The Device Research Conference (DRC) brings together leading scientists, researchers, and students to share their latest discoveries in device science, technology and modeling. 2016 marked the 75th anniversary of the DRC — the longest running device research meeting in the world.
Transistors based on atomically thin two-dimensional (2D) materials like MoS2 have attractive properties for applications in low-power electronics. However, in practice their electrical measurements often exhibit hysteresis, masking their intrinsic behavior. In this study we used pulsed measurements to decrease hysteresis, examine charge trapping, and extract device parameters (like mobility) that represent the "true" behavior of 2D devices. Hysteresis is minimized even with modest ≤ 1 ms pulses, and the extracted mobility converges to a unique value, unlike the less reliable conventional methods which rely either on forward or reverse DC sweeps.