Dr Khare is pleased to offer his perspective on what lies ahead for the semiconductor devices and systems roadmap, from scaling and advanced pattering, to novel logic devices, toward new computing devices and architectures for cognitive systems.
Dr. Mukesh V. Khare is a Vice President at IBM Research driving the overall semiconductor research agenda. In his current role, he is leading IBM’s semiconductor research and Joint Development Alliance (JDA) with top semiconductor companies to define next generation technology, generate silicon proof points and develop longer term pipeline of innovative elements for IBM Systems and JDA partners.
Most recently, he led the IBM Research team which collaborated with alliance partners GLOBALFOUNDRIES and Samsung to develop the industry's first 7nm node test chip.
Dr. Khare led the development and implementation of high-k metal gate technology starting from fundamental research to full implementation in 32nm technology node at IBM and development alliance member companies. He and his research team drove the three dimensional device structure innovation, called FinFET that delivers superior power performance benefit to IBM Server and development alliance partners. As a technical champion, he led engineering team through development and qualification of the 90nm SOI technology from basic definition to the transfer in the 300mm manufacturing Fab.
Dr. Khare is a recipient of Corporate Award and Outstanding Technical Achievement Award at IBM towards his technical contribution and leadership. He is the program chair at the Symposia on VLSI Technology. He has authored and co-authored more than 80 research papers and holds several U.S. and international patents.
Dr. Khare has held a number of engineering and executive positions at IBM since 1998. He received his M.S., M. Phil., and Ph.D. degrees from Yale University.