SystemX Seminar

Can’t See an Exciting Future in CMOS? Time to RETHINK Bipolar
Thursday, November 19, 2015 - 4:30pm to 5:30pm
Y2E2 111
Dr. Tak H. Ning (IBM)
Abstract / Description: 

The reasons why state-of-the-art vertical bipolar circuits dissipate very high power are explained. The merits of SOI symmetric lateral bipolar transistors as a high-speed low-power technology are discussed. SOI lateral bipolar is CMOS-compatible, scalable like CMOS, and arguably much lower cost than CMOS. It not only enables traditional bipolar circuits to run fast at much reduced power, it invites us to totally rethink bipolar. The exciting potentials of SOI lateral bipolar for a wide range of system applications are discussed, including high-performance, ultra-low-power, and THz electronics.