The advent of WBG (SiC and GaN) devices is poised to revolutionize the power electronics applications – both in the low power and low voltage applications as well as the Medium Voltage (MV) and High Voltage (HV) applications at high power levels. This seminar outlines opportunities for HV SiC devices for MV Power Converters and utility applications and the challenges to apply these HV SiC devices successfully – and as an enabler for Solid State Transformer (SST) for integration of Renewable Energy Sources. The talk will focus on SiC devices based power electronics applications with SiC device voltage ranges from 1200 V to 1700 V MOSFETs, and JBS diodes through HV 10 kV - 15 kV MOSFETs, JBS diodes, and 15 kV SiC IGBTs. Challenges in adopting these HV SiC devices for MV power conversion in terms of high frequency magnetics will also be discussed.
Subhashish Bhattacharya received his B.E. (Hons), M.E. and PhD degrees in Electrical Engineering from Indian Institute of Technology-Roorkee (formerly University of Roorkee), India in 1986, Indian Institute of Science (IISc), Bangalore, India in 1988, and University of Wisconsin-Madison in 2003, respectively. He worked in the FACTS (Flexible AC Transmission Systems) and Power Quality group at Westinghouse R&D Center in Pittsburgh which later became part of Siemens Power Transmission & Distribution, from 1998 to 2005. He joined the Department of Electrical and Computer Engineering at North Carolina State University (NCSU) in August 2005, where he is the ABB Term Professor, and also a faculty member of NSF ERC FREEDM systems center (www.freedm.ncsu.edu), Advanced Transportation Energy Center [ATEC] (www.atec.ncsu.edu) and the newly established DOE initiative on WBG based Manufacturing Innovation Institute – PowerAmerica - at NCSU. His research interests are Solid-State Transformers, MV power converters, FACTS; high-frequency magnetics, active filters, and application of new power semiconductor devices such as SiC for converter topologies.