EST Seminar presents "2D Atomic Memory: From Single Defects to Computing and RF Switches"

Topic: 
2D Atomic Memory: From Single Defects to Computing and RF Switches
Tuesday, April 6, 2021 - 12:30pm
Speaker: 
Professor Deji Akinwande (Univ of Texas, Austin)
Abstract / Description: 

This presentation focuses on the discovery of memory effect in 2D atomically-thin nanomaterials towards greater scientific understanding and advanced engineering applications. Non- volatile memory devices based on 2D materials are an application of defects and is a rapidly advancing field with rich physics that can be attributed to vacancies combined with metal adsorption. In particular the talk will highlight our pioneering work on monolayer memory (atomristors) that has expanded to over a dozen 2D sheets and can enable various applications including zero-power devices, non-volatile RF switches, and memristors for neuromorphic computing. Much of these research achievements have been published in nature, advanced materials, IEEE, and ACS journals.

References:

[1] R. Ge, X. Wu, L. Liang, ..., J. C. Lee, and D. Akinwande, "A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon," Advanced Materials, vol. 33, 2021.
[2] S. M. Hus, R. Ge, P.-A. Chen, L. Liang, G. E. Donnelly, W. Ko, F. Huang, M.-H. Chiang, A.-P. Li, and D. Akinwande, "Observation of single-defect memristor in an MoS2 atomic sheet," Nature Nano., 11/2020.
[3] M. Kim, E. Pallechi, R. Ge, X. Wu, G. Ducournau, J. Lee, H. Happy, and D. Akinwande, "Analogue Switches made from h-BN Monolayers for 5G and Terahertz Communication Systems," Nature Electronic, 2020.
[4] S. Chen, M. R. Mahmoodi, ... D. Akinwande, D. B. Strukov, and M. Lanza, "Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks," Nature Electronics, 10/2020.
[5] D. Akinwande, C. Huyghebaert, C.-H. Wang, Serna, S. Goossens, L. Li, H. S. P. Wong, and F. Koppens, "Graphene and 2D Materials for Silicon Technology," Nature, 2019.

Bio: Prof. Deji Akinwande is the Temple Foundation Endowed Professor at the University of Texas at Austin. His research focuses on 2D materials, pioneering device innovations from lab towards applications. He received the PhD degree from Stanford University in 2009. Prof. Akinwande has been honored with the 2018 Fulbright Specialist Award, 2017 Bessel-Humboldt Research Award, the U.S Presidential PECASE award, the inaugural Gordon Moore Inventor Fellow award, the inaugural IEEE Nano Geim and Novoselov Graphene Prize, the IEEE "Early Career Award" in Nanotechnology, the NSF CAREER award, several DoD Young Investigator awards, and was a past recipient of fellowships from the Kilby/TI, Ford Foundation, Alfred P. Sloan Foundation, 3M, and Stanford DARE Initiative. His research achievements have been featured by Nature news, Time and Forbes magazine, BBC, Discover magazine, Wall Street Journal, and many media outlets. He serves as an Editor ACS Nano and Nature NPJ 2D Materials & Applications, and on the editorial board for Science. He is the co-Chair of the Gordon Research Conference on 2D electronics, and was a past Chair of the 2018/2019 Device Research Conference (DRC), and the Nano-device sub-committee for the 2018 IEEE IEDM Conference. He is a Fellow of the IEEE and the American Physical Society (APS).