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Negative capacitance has been proposed to overcome the fundamental limits of power dissipation in nanoscale transistors by using ferroelectric materials. This idea was based on the Landau theory of phase transitions, which was first applied to ferroelectrics in 1945. Landau theory predicts an S-shaped relationship between the polarization and the electric field in a ferroelectric, which was thought to be inaccessible by experiment until now. In this talk, it will be shown how the intrinsic S-shaped polarization-electric field curve can be electrically measured in hafnium zirconium oxide, which is the most promising ferroelectric material for prospective applications in computation.
Michael Hoffmann is currently working towards his PhD in electrical engineering at the Nanoelectronic Materials Laboratory (NaMLab) in Dresden, Germany. His research interest include ferroelectric materials for low power computing as well as energy conversion and storage applications. In particular, his current work is focused on negative capacitance effects in hafnium oxide and zirconium oxide based ferroelectrics.