NAND flash memory is the ubiquitous storage memory used in from mobile devices on the low end to high performance servers on the high end. It is a growing $20B business. In this presentation, we will examine the scaling challenges and explain how by going to 3D NAND, NAND flash gets a new lease of scaling life. We will also explore alternative memory concepts to see how they can or cannot compete with NAND. Lastly, we will discuss how NAND memory fits in a computing system and the opportunities for innovation on how to use the memory.
Stefan K. Lai received his B.S. in applied physics from California Institute of Technology, and his Ph.D. in applied quantum physics from Yale University.
From Yale, Lai joined IBM Yorktown TJ Watson Research Center as a Member of Technical Staff where he conducted research on silicon-silicon dioxide interface properties. Lai joined Intel in 1982 to develop scalable E2PROM and he co-invented the EPROM tunnel oxide (ETOX) flash memory cell, which has become industry standard. He and his team have developed through 2006 ten generations of ETOX technologies achieving 1000X cell size reduction. In 1999, he started a team to develop alternative memory technologies and Intel was one of first major semiconductor company to pursue phase change memory (PCM). He was appointed Vice President of Intel’s Technology and Manufacturing Group in 2000. He retired from Intel end of 2006. From February 2007 to July of 2008, he was Vice President, Business Development, Ovonyx Inc. Currently, he is Senior Advisor to ANPAC, an analog startup in Hong Kong. He also services as consultant to companies from early to later stages and expert witness in IP cases. He is an active angel investor.
Lai was recognized as an IEEE Fellow in 1998 for his research on the properties of silicon MOS interfaces and the development of flash EPROM memory. He is also awarded the 2008 IEEE Andrew Grove Award for his contribution to flash memories.