GaN electronic devices are presently being developed for microwave and power applications. Many challenges remain in particular how to manage heat and charge carrier trapping. Prof. Kuball will review his latest work in this field, including the benefit of using diamond for thermal heat sinking as well of carbon doping of the GaN and its implication on charge carrier trapping and electrical conduction.
Professor Kuball leads the Center for Device Thermography and Reliability (CDTR) at the University of Bristol, UK. He obtained his PhD in 1995 from the Max-Plank Institute of Solid State Physics in Stuttgart Germany, and joined the University of Bristol in 1997, after being Feodor Lynen Postdoctoral Fellow at Brown University, USA.