Evolution of Device Technologies and the Revolution needed in Nano-Manufacturing

Topic: 
Evolution of Device Technologies and the Revolution needed in Nano-Manufacturing
Tuesday, November 4, 2014 - 4:15pm to 5:30pm
Venue: 
Huang 018
Speaker: 
Dr. Raj Jammy (Intermolecular)
Abstract / Description: 

As semiconductor devices continue to evolve to deliver more within the power-performance-bandwidth trade-off envelope, logic and memory devices are undergoing a series of fundamental transitions. When viewed individually, these transitions seem to be natural evolutionary extensions of current generation technologies. However, optimal and cost-effective manufacturing of future nano-devices incorporating these changes will require significantly different approaches. Current industry infrastructure in process, materials, metrology and design tools is not geared to handle these upcoming technology needs. Revolutionary changes are needed in how we research and develop next generation technologies, and identify or even design materials with desirable mechanical, electrical and chemical properties. High volume semiconductor manufacturing tools and processes that are geared for challenges in handling seemingly incompatible materials, 3D device and packaging architectures, non-destructive nano-metrology techniques, 3D design tools and test strategies need to be developed.

Dr. Jammy, is Senior Vice President, Emerging Technologies at Intermolecular, where he is responsible for leading the effort on emerging semiconductor logic and memory technologies. Prior to joining Intermolecular in March 2013, Dr. Jammy was the Vice President of Materials and Emerging Technologies at SEMATECH where he was leading the consortium's efforts in front‐end CMOS logic, novel memory technologies, 3D TSV interconnects and emerging beyond‐CMOS technologies with disruptive scaling potential. Dr. Jammy served as Director of SEMATECH's Front End Processes division as an assignee from IBM between 2005 and 2008. Dr. Jammy began his career in the industry at IBM’s Semiconductor Research and Development Center in East Fishkill, NY, working on deep‐trench DRAMs, subsequently taking on larger technical and managerial responsibilities including managing IBM’s efforts in high‐k gate dielectrics and metal gates at IBM T. J. Watson Research Center in Yorktown Heights, NY. Dr. Jammy received a doctorate in Electrical Engineering from Northwestern University. He holds more than 50 patents and is an author/co‐author of over 225 publications/presentations.