PUBLICATIONS

J. S. Harris, Jr.

 

Stanford University (1965-68)

 

1.     J. S. Harris, W. L. Snyder, J. L. Moll, and G. L. Pearson, "The Effects of Uniaxial Stress on the Electrical Resistivity of n-Type Boat Grown and Liquid Epitaxial GaAs," IEEE Trans. Elect Dev. ED-14, 690 (1968).

 

2.     J. S. Harris and W. L. Snyder, "Homogeneous Solution Grown Epitaxial GaAs by Tin Doping," Solid State Electron. 12, 337 (1969).

 

3.     J. S. Harris, Y. Nannichi, and G. L. Pearson, "Ohmic Contacts to Solution Grown Gallium Arsenide", J. Appl. Phys., 40, 4575 (1969).

 

4.     J. S. Harris, J. L. Moll, and G. L. Pearson, "The Effects of Uniaxial Stress on the Electrical Resistivity and the Gunn Effect in n-Type GaAs", Phys. Rev. B. 1,1660 (1970).

 

Rockwell International Science Center (1969-82)

 

5.     J. S. Harris and F. Eisen, "The Annealing of Damage in Ion Implanted Gallium Arsenide", Radiation Effects  7, 123 (1970).

 

6.     J. S. Harris, "The Effects of Dose Rate and Implantation Temperature on Lattice Damage and Electrical Activity in Ion Implanted GaAs", Proc. 2nd International. Conf. on Ion Implantation Semiconductors May, 1971, ed. I. Ruge and J. Graul (Springer-Verlag, Berlin, 1971) p.157.

 

7.     J. T. Longo, J. S. Harris, E. R. Gertner, and J. C. Chu, "Improved Surface Properties of Solution Grown GaAs and Pb1-xSnxTe Epitaxial Layers: A New Technique", J. Crystal Growth 15, 107  (1972).

 

8.     J. T. Longo, E. R. Gertner, and J. S. Harris, "Material Properties of Solution Grown Pb1-x SnxTe", Proc. IV-VI Conference, Mar. 24-25, 1972 Philadelphia, Pa.

 

9.     J. T. Longo, E. R. Gertner, and J. S. Harris, "Material Properties of Solution Grown Pb1-x SnxTe", J. Nonmetals 1, 321 (1973).

 

10.  J. S. Harris, F. H. Eisen, B. Welch, J. D. Haskell, R. D. Pashley and J. W. Mayer, "Influence of Implantation Temperature and Surface Protection on Tellurium Implantation in GaAs", Appl. Phys. Lett. 21, 601 (1972).

 

11.  J. S. Harris, J. M. Harris, and H. L. Marcus, "Fluorine Ion Implantation Profiles in Gallium Arsenide as Determined by Auger Electron Spectroscopy", Appl. Phys. Lett. 21, 598 (1972).

 

12.  F. H. Eisen, J. S. Harris, B. Welch, R. D. Pashley, D. Sigurd and J. W. Mayer, "Properties of Tellurium Implanted Gallium Arsenide", Ion Implantation in Semiconductors and Other Materials, ed. B. L. Crowder (Plenum, New York, 1973), p. 631.

 

13.  J. S. Harris and F. H. Eisen, "The Influence of Radiation Damage on Ion Implantation", Proc. of the Radiation Effects Symposium, Los Angeles, CA, (1974), p. 3.

 

14.  F. H. Eisen, J. S Harris, B. Welch, R. D. Pashley, D. Sigurd and J. W. Mayer. "Properties of Tellurium Implanted GaAs", Proc. 3rd Annual Meeting on Ion Implantation in Semiconductors and other Materials, New York (1972).

 

15.  J. S. Harris, J. T. Longo, E. R. Gertner and J. E. Clarke, "The Phase Diagram and its Application to the Liquid Phase Epitaxial Growth of Pb1-xSnxTe," J. of Crystal Growth 28, 334 (1975).

 

16.  W. F. Hall, W. E. Tennant, J. A. Cape and J. S. Harris, "Non-destructive Determination of Energy Gap Grading in Thin Films by Optical Transmission Measurements," J. Vac. Sci. Technol. 13, 914 (1975).

 

17.  J. R. Waldrop and J. S. Harris, "Potential Profiling Across Semiconductor Junctions by Auger Electron Spectroscopy in the Scanning Electron Microscope," J. Appl. Phys. 46, 5214 (1975).

 

18.  R. Sahai, J. S. Harris, D. D. Edwall and F. H. Eisen, "Growth and Evaluation of LPE Graded Composition Al Gal As Layers for High Efficiency Graded Bandgap Solar Cells," J. Electronic Materials, 6, 645 (1977).

 

19.  19. J. A. Hutchby, R. Sahai and J. S. Harris,    "High Efficiency Graded Bandgap n/p AlxGa1-xAs Solar Cells," Proc. IEEE IEDM, Washington, D.C. 1975, p. 377.

 

20.  R. Sahai, J. S. Harris, R. C. Eden, L. 0. Bubulac and J. C. Chu, "Double Heterojunction Photocathode Devices",  CRC Crit. Rev. Sol. State Sci., 5, 565 (1975).

 

21.  S. H. Anderson, F. Scholl and J. S. Harris, "AlGaSb Alloys for 1.0µm to 1.8µm Heterojunction Devices," Proc. Sixth International Conference on GaAs and Related Compounds, ed. L. F. Eastman, (Institute of Physics, Bristol, 1977) 33b, 346 (1977).

 

22.  R. Sahai, D. D. Edwall, E. Cory and J. S. Harris, "High Efficiency Thin Window Ga1-xAlx As/GaAs Solar Cells", Proc. IEEE 12th Photovoltaic Specialists Conf., Baton Rouge, LA, (1976) p. 989.

 

23.  C. M. Garner, Y. D. Shen, J. S. Kim, G. L. Pearson, W. E. Spicer, J. S. Harris, and D. D. Edwall, "Auger Profiling of 'Abrupt' LPE Al Gal -xAs/GaAs Heterojunctions," J. Appl. Phys. 48, 3147 (1977).

 

24.  C. M. Garner, Y. D. Shen, J. S. Kim, G. L. Pearson, W. E. Spicer, J. S. Harris, D. D. Edwall and R. Sahai, "Auger Depth Profiling of Au-AlxGa1-xAs Interfaces and LPE AlxGa1-x-GaAs Heterojunctions," J. Vac. Sci. Technol. 14, 985 (l977).

 

25.  R. S. Miller and J. S. Harris, "Gallium Arsenide Concentrator System," Proc. AIAA Conf. on Future of Aerospace Power Systems, St. Louis, MO, (1977), p. 147.

 

26.  J. F. Madewell, A. A. Nussberger and J. S. Harris, "A Solar Power System with Gallium Arsenide Solar Cells," Proc. AIAA Conf. on Future of Aerospace Power Systems, St. Louis, MO (1977), p. 151.

 

27.  J. F. Madewell, A. A. Nussberger and J. S. Harris, "A Solar Power System with Gallium Arsenide Solar Cells," J. Energy.

 

28.  I. Deyhimy, J. S. Harris, R. C. Eden, D. D. Edwall, S. J. Anderson and L. 0. Bubulac. "GaAs Charge Coupled Devices", Appl. Phys. Lett. 32 , 383 (1978).

 

29.  M. J. Cohen and J. S. Harris. "(SN)x-GaAs Polymer Semiconductor Solar Cells", Appl. Phys. Lett. 33, 812 (1978).

 

30.  M. J. Cohen, J. S. Harris and J. R. Waldrop. "Carrier Transport at Grain Boundaries in Polycrystalline GaAs", Proc. Seventh International Conference on GaAs and Related Compounds, ed. C. M. Wolfe, (Institute of Physics, Bristol, 1979) 45, 263 (1978).

 

31.  I. Deyhimy, J. S. Harris, R. C. Eden. "GaAs CCD with High Transfer Efficiency", Proc. International CCD Conference, San Diego, CA  (1978), p. 117.

 

32.  I. Deyhimy, J. S. Harris, R. C. Eden, D. D. Edwall, R. J. Anderson. "High Speed GaAs CCD", Proc. IEEE IEDM, Washington, D.C., (1978), p. 927.

 

33.  I. Deyhimy, J. S. Harris, D. D. Edwall. "CCD's in GaAs and Related III-V Compounds" Proc. Seventh International Conference on GaAs and Related Compounds, ed. C. M. Wolfe, (Institute of Physics, Bristol, 1979) 45, 445 (1978).

 

34.  R. Sahai, D. D. Edwall and J. S. Harris. "High Efficiency AlGaAs/GaAs Concentrator Solar Cell Development",  Proc. 13th IEEE Photovoltaic Specialists Conference, Washington, D.C., p. 946 (1978).

 

35.  H. D. Law,  K. Nakano, L. R. Tomasetta and J. S. Harris. "Ionization Coefficients of Ga0.72Al0.28Sb Avalanche Photodetectors," Appl. Phys. Lett. 33, 948 (1978).

 

36.  H. D. Law,  L. R. Tomasetta, K. Nakano, and J. S. Harris. "1.0-1.4µm High-Speed Avalanche Photodiodes," Appl. Phys. Lett. 33 , 416 (1978).

 

37.  H. D. Law,  J. S. Harris, K. C. Wong and L. R. Tomasetta. "GaAlAsSb/ GaSb Alloys: Material Preparation and Applications to Optoelectronic Devices", Proc. Seventh International Conference on GaAs and Related Compounds, ed. C. M. Wolfe, (Institute of Physics, Bristol, 1979) 45, (1978), p. 420.

 

38.  R. Sahai, D. D. Edwall, and J. S. Harris "High Efficiency AlGaAs/GaAs Concentrator Solar Cells", Appl. Phys. Lett. 34 , 147 (1979).

 

39.  J. A. Cape,  J. S. Harris and R. Sahai, "Spectrally Split Tandem Cell Converter Studies", Proc. 13th IEEE Photovoltaic Specialists Conference, Washington, DC, 1978, p. 881.

 

40.  J. A. Cape, R. Sahai, and J. S. Harris, "20 KW Gallium Arsenide Photovoltaic Dense Array for Central Receiver Concentrator Applications", Proc. 1979 Photovoltaic Solar Energy Conference, Berlin, (1979) p. 143.

 

41.  I. Deyhimy, J. S. Harris, Jr., R. C. Eden and R. J. Anderson, "259 Gate GaAs CCD Shift Register for High Speed Applications", Proc. 5th International Conference on Charge Coupled Devices, Edinburgh (1979), p. 217.

 

42.  I. Deyhimy, J. S. Harris, Jr., R. C. Eden and R. J. Anderson "Reduced Geometry GaAs CCD for High Speed Signal Processing" Proc. 1979 International Conf. Solid State Devices, Tokyo, (1979).

 

43.  I. Deyhimy, J. S. Harris, Jr., R. C. Eden and R. J. Anderson "Reduced Geometry GaAs CCD for High Speed Signal Processing", J. J. Appl. Phys 19, 269 (1979).

 

44.  H. T. Yang, Y. D. Shen, D. D. Edwall, D. L. Miller and J. S. Harris, Jr., "Barrier Height Enhancement in Heterojunction Schottky Barrier Solar Cells", IEEE Trans. Electron Dev. ED-27, 851 (1980).

 

45.  C. M. Garner, C. Y. Su, W. E. Spicer, P. D. Edwood, D. Miller and J. S. Harris, "Minimum Al0.5Ga0.5As-GaAs Heterojunction Width Determined by Sputter-Auger Technique", Appl. Phys. Lett. 34 , 610  (1979).

 

46.  Y. Z. Liu, I. Deyhimy, J. S. Harris, Jr., R. J. Anderson and Jacob Appelbaum, "Observation of Charge Storage and Charge Transfer in a GaAlAsSb/GaSb CCD", Appl. Phys. Lett. 36, 458 (1980).

 

47.  Stanley W. Zehr, D. L. Miller and J. S. Harris, Jr. "Intercell Ohmic Contacts for High Efficiency Multijunction Solar Converters" Proc. 3rd High Efficiency & Radiation Damage Solar Cell Meeting, Cleveland, OH (1979), NASA Conf. Publication # 2097, p. 283.

 

48.  I. Deyhimy, J. S. Harris, Jr., R. C. Eden, R. J. Anderson, and D. D. Edwall, "An Ultra High Speed GaAs CCD", Proc. IEEE IEDM, Washington, D.C., (1979), p. 619.

 

49.  I. Deyhimy, J. S. Harris, Jr. and R. C. Eden, "Application of GaAs CCD's to High Speed Signal Processing", Proc. 1979 IEEE/MTT-S First Specialty Conference on Gigabit Logic for Microwave Systems, Orlando, Florida, (1979), p. 120.

 

50.  C. M. Garner, C. Y. Su, Y. D. Shen, C. S. Lee, G. L. Pearson, W. E. Spicer, D. D. Edwall, D. Miller and J. S. Harris, "Interface Studies of Al Gal As-GaAs Heterojunctions", J. Appl. Phys. 50, 3383, (1979).

 

51.  H. Kroemer, Wu-Yi Chien, J. S. Harris, Jr. and D. D. Edwall, "Measurement of Isotype Heterojunction Barriers by C-V Profiling", Appl. Phys. Lett. 36, 295 (1980).

 

52.  S. W. Zehr, J. A. Cape and J. S. Harris, Jr., "Performance Losses in High Efficiency Monolithic Multijunction Solar Cells", Proc. 14th IEEE Photovoltaic Specialists Conference, San Diego, CA, (1980), p. 346.

 

53.  Y. Z. Liu, H. T. Yang and J. S. Harris, Jr., "Low Bandgap (0.7 to 1.1 eV) Solar Cells in the GaAlAsSb/GaSb System", Proc. 14th IEEE Photovoltaic Specialists Conference, San Diego, CA,  (1980), p. 1338.

 

54.  H. T. Yang, D. L. Miller, Y. D. Shen, D. D. Edwall and J. S. Harris, Jr., "Heterojunction Schottky Barrier Solar Cells", Proc. 14th IEEE Photovoltaic Specialists Conference, San Diego, CA, (1980), p. 1333.

 

55.  I. Deyhimy, R. C. Eden, D. D. Edwall, R. J. Anderson and J. S. Harris, Jr., "A 500 MHz GaAs Charge Coupled Device", Appl. Phys. Lett. 36, 151,  (1980).

 

56.  Ira Deyhimy, R. C. Eden and J. S. Harris, Jr. "GaAs and Related Heterojunction Charge Coupled Devices", IEEE Trans. Electron Dev., ED-27, 1172 (1980).

 

57.  Marshall J. Cohen, M. D. Paul, D. L. Miller, J. R. Waldrop and J. S. Harris, Jr., "Schottky Barrier Formation in Polycrystal GaAs", J. Vac. Sci. Technol. 17, 899  (1980).

 

58.  S. W. Zehr, H. T. Yang, J. J. J. Yang, J. J. Coleman, D. L. Miller, W. J. Schaffer, P. J. Stocker and J. S. Harris, Jr., "A Non-Lattice Matched Monolithic Multicolor Solar Cell", Proc. AS/ISES Solar Jubilee, Phoenix, AZ,  (1980), p. 986.

 

59.  J. A. Cape, J. S. Harris, Jr. and James Wiczer, "Gallium Arsenide Photovoltaic Dense Array for Concentrator Applications", Proc. AS/ISES Solar Jubilee, Phoenix, AZ,  (1980), p. 1072.

 

60.  Marshall J. Cohen, J. A. Cape, M. D. Paul, D. L. Miller and J. S. Harris, Jr., "Solar Cell Characterization at Rockwell International", Proc. SPIE Meeting, San Diego, CA. (1980), p. 109.

 

61.  I. Deyhimy, J. S. Harris, Jr., R. C. Eden and R. J. Anderson, "Analog Signal Processing Complement to GaAs Digital ICs", Proc. IEEE GaAs Integrated Circuits Symp., Lake  Tahoe, NV (1979), p. 157.

 

62.  I. Deyhimy, J. S. Harris, Jr., R. C. Eden, R. J. Anderson and D. D. Edwall, "An Ultra-high Speed GaAs CCD", Proc. IEEE IEDM, Washington, D. C., (1979), p. 619.

 

63.  Y. Z. Liu, I. Deyhimy, R. J. Anderson, J. S. Harris, Jr. and L. R. Tomasetta, "GaAlAs/GaAs Heterojunction Schottky Barrier Gate CCD", Proc. IEEE IEDM, Washington, D. C., (1979), p. 622.

 

64.  S. W. Zehr, H. T. Yang, J. J. Coleman, D. L. Miller, J. J. J. Yang, R. P. Ruth and J. S. Harris, Jr., "Monolithic Multicolor Solar Conversion, Proc. SPIE Meeting, San Diego, CA. (1980), p. 125.

 

65.  J. S. Harris, R. P. Ruth, S. W. Zehr, J. J. Coleman, R. D. Dupuis, H. T. Yang and D. L. Miller, "Development of Stacked Multiple Bandgap Solar Cells", Proc. IEEE  IEDM, Washington, D. C., (1979), p. 694.

 

66.  J. J. Wiczer, J. A. Cape and J. S. Harris, Jr., "Gallium Arsenide Photovoltaic Dense Array for Concentrator Applications", Proc. SPIE Meeting, San Diego, CA. (1980), p. 114.

 

67.  D. L. Miller and J. S. Harris, Jr., "MBE GaAs Heteroface Solar Cells Grown on Ge", Appl. Phys. Lett. 37, 1104 (1980).

 

68.  I. Deyhimy, R. J. Anderson, Richard C. Eden and J. S. Harris, Jr., "Charge Coupled Devices in Gallium Arsenide", IEE-Proc. 127, Part I, 278 (1980).

 

69.  Y. Z. Liu, I. Deyhimy, R. J. Anderson, R. A. Milano, M. J. Cohen, J. S. Harris, Jr., and L. R. Tomasetta, "A Backside-Illuminated Imaging AlGaAs/GaAs Charge Coupled Device", Appl. Phys. Lett. 37, 803 (1980).

 

70.  J. S. Harris, Jr. and L. R. Reitz, "High Performance AlGaAs/GaAs Heterojunction CCDs for Imaging Applications", Proc. Rocky Mountain Guidance and Control Conference, (1981), p. 122.

 

71.  J. S. Harris, Jr. and L. R. Reitz, "High Performance AlGaAs/GaAs Heterojunction CCDs for Imaging Applications", Adv. Astronomical Sciences 45, 197 (1981).

 

72.  D. L. Miller, S. W. Zehr and J. S. Harris, Jr., "GaAs/AlGaAs Tunnel Junctions for Multiple Bandgap Solar Cells", J. Appl. Phys. 53, 744 (1982).

 

73.  D. L. Miller, J. S. Harris, Jr. and P. M. Asbeck, "An MBE AlGaAs/GaAs Heterojunction Bipolar Transistor", Proc. Ninth International Conference on GaAs and Related Compounds, ed. T. Sugano, (Institute of Physics, Bristol, 1982) 63, (1981), p. 579.

 

74.  P. M. Asbeck, D. L. Miller, R. A. Milano, J. S. Harris, Jr., G. R. Kaelin and R. Zucca,"(Ga,Al)As/GaAs Bipolar Transistors for Digital Integrated Circuits", Proc. IEEE IEDM, Washington, D. C., (1981), p. 629.

 

75.  J. S. Harris, Jr., D. L. Miller and P. M. Asbeck, "Heterojunction Bipolar Transistors", Proc. 14th International Conf. Solid State Devices, Tokyo, Japan (1982), p.199.

 

76.  J. S. Harris, Jr., D. L. Miller and P. M. Asbeck, "Heterojunction Bipolar Transistors", J. J. Appl. Phys. 22, 379 (1982).

 

Stanford University (1982-present)

 

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77.      E. S. Hellman, J. S. Harris, Jr., C. B. Hanna and R. B. Laughlin, "One Dimensional Polaron Effects and Current Inhomogeneities in Sequential Phonon Emission," Physica 134B, pp. 41-46 (1985)

 

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78.      C. B. Hanna, E. S. Hellman and R. B. Laughlin, "Mechanism of Current Modulation by Optic Phonons in Heterojunction Tunneling Experiments," Phys. Rev. B, 34 (8) pp. 5475-83, October 1986

 

79.      E. S. Hellman, P. M. Pitner, A. Harwit, D. Liu, G. W. Yoffe, J. S. Harris, Jr., B. Caffee and T. Hierl, "Molecular Beam Epitaxy of Gallium Arsenide using Direct Radiative Substrate Heating," J. Vac. Sci. Technol. B 4 (2) pp. 574-7 Mar/Apr 1986.

 

80.      R. L. Lee, W. J. Schaffer, Y. G. Chai, D. Liu and J. S. Harris, Jr., "Material Effects on the Cracking Efficiency of Molecular Beam Epitaxy Arsenic Cracking Furnaces," J. Vac. Sci. Technol. B 4 (2) pp. 568-70, Mar/Apr 1986. 

 

81.      S. M. Koch, S. J. Rosner, D. G. Schlom and J. S. Harris, Jr., "The Growth of GaAs on Si by Molecular Beam Epitaxy," Proc. Annual Spring Meeting of the Materials Research Society, Palo Alto, CA, April 1986.  Heteroepitaxy on Silicon, ed. by J. C. C. Fan and J. M. Poate, pp. 37.

 

82.      S. J. Rosner, S. M. Koch, S. Laderman and J. S. Harris, Jr., "Microstructure of Thin Layers of MBE-Grown GaAs on Si Substrates," Proc. Annual Spring Meeting of the Materials Research Society, Palo Alto, CA, April 1986, Heteroepitaxy on Silicon, ed. by J. C. C. Fan and J. M. Poate, pp. 77.

 

83.      Y. C. Pao, D. Liu, W. S. Lee and J. S. Harris, Jr., "Effect of Hydrogen on Undoped and Lightly Si-Doped Molecular Beam Epitaxial GaAs Layers," Appl. Phys. Lett. 48 (19) pp. 1291-3, May 1986.

 

84.      E. S. Hellman and J. S. Harris, Jr., "Energy-Momentum Relation for Polarons Confined to One Dimension," Phys. Rev. B  33 (12) pp. 8284-90, June 1986. 

 

85.      Y. C. Pao, T. Hierl and T. Cooper, "Surface Effect-Induced Fast Be Diffusion in Heavily Doped GaAs Grown by Molecular Beam Epitaxy," J. Appl. Phys. 60 (1), pp. 201-204, July 1986.

 

86.      E. C. Larkins, E. S. Hellman, D. G. Schlom, J. S. Harris, Jr., M. H. Kim and G. E. Stillman, "Reduction of the Acceptor Impurity Background in GaAs Grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 49 (7) pp. 391-3, August 1986. 

 

87.      K. Yoh and J. S. Harris, Jr., "A p-Channel Double Heterojunction GaAs/AlGaAs Modulation Doped Field Effect Transistor," Extended Abstracts of 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, Japan, August 1986, pp. 773.

 

88.      S. E. Harris and J. S. Harris, Jr., ""Stanford University: Stanford Electronics Laboratory and Microwave Ginzton Laboratory," Forthieth Anniversary of the Joint Services Electronics Program," ed. A. Shostak (ANSER, Arlington, VA, 1986)

 

89.      A. Harwit, J. S. Harris, Jr. and A. Kapitulnik, "Calculated Quasi-Eigenenstates and Quasi-Eigenenergies of Quantum Well Superlattices in an Applied Field," J. Appl. Phys. 60 (9) pp., November, 1986, pp. 3211-13.

 

90.      E. S. Hellman and J. S. Harris, Jr., "Polaron Transport in Quasi-One-Dimensional Semiconductor Heterostructures," Surface Science, 174 (1986) pp. 459-465.

 

91.      R. Hull, S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Atomic Structure of the GaAs/Si Interface," Appl. Phys. Lett. 49 (25) pp. 1714-16, 22 December 1986. 

 

92.      S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Nucleation and Initial Growth of GaAs on Si Substrate," Appl. Phys. Lett. 49 (26) pp. 1764-66, 29 December 1986.

 

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93.      E. C. Larkins, E. S. Hellman, D. G. Schlom, J. S. Harris, Jr., M. H. Kim and G. E. Stillman, "GaAs with Very Low Acceptor Impurity Background Grown by Molecular Beam Epitaxy," J. Cryst. Growth 81, pp. 344-348 (1987).

 

94.      E. S. Hellman and J. S. Harris, Jr., "Polynomial Kinetic Energy Approximation for Direct-Indirect Heterostructures," Superlattice and Microstructures, 3 pp. 167-169 (1987)

 

95.      S. M. Koch, S. J. Rosner, R. Hull, G. W. Yoffe and J. S. Harris, Jr., "The Growth of GaAs on Si by MBE," J. Cryst. Growth 81 pp. 205-213 (1987). 

 

96.      E. S. Hellman and J. S. Harris, Jr, "Infra-Red Transmission Spectroscopy of GaAs during Molecular Beam Epitaxy," J. Cryst. Growth, 81 pp. 38-42 (1987).

 

97.      Harwit and J. S. Harris, Jr., "Observation of Stark Shifts in Quantum Well Intersubband Transitions," Appl. Phys. Lett.  50 (11), pp. 685-87, March 1987.

 

98.      K. Yoh and J. S. Harris, Jr., "A p-Channel Strained Quantum Well Modulation Doped Field Effect Transistor," Extended Abstracts of the Japan Society of Applied Physics Meeting, Tokyo, March 1987, pp. 804.83.

 

99.      R. Hull, A. Fischer-Colbrie, S. M. Koch, and J. S. Harris, Jr., "Nucleation of GaAs on Vicinal Si(100) Surfaces", Mat. Res. Soc. Symp. Proc. 94, 25 (1987).

 

100.   S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Structural Characterization of Thin, Low Temperature Films of GaAs on Si Substrates," Proc. Spring 1987 MRS Meeting, Anaheim, CA

 

101.   K. Nauka, G. A. Reid, S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Deep Electron Traps in MBE GaAs on Si," Proc. Spring 1987 MRS Meeting, Anaheim, CA.

 

102.   J. S. Harris, Jr., S. M. Koch and S. J. Rosner, "The Nucleation and Growth of GaAs on Si," Proc. Spring 1987 MRS Meeting, Anaheim, CA.

 

103.   E. Wolak, A. Harwit and J. S. Harris, Jr., "Comment on Observation of a Negative Differential Resistance due to Tunneling through a Single Barrier into a Quantum Well," Appl. Phys. Lett. 50 (22), June 1987.

 

104.   D. R. Allee, P. R. de la Houssaye, D. G. Schlom, B. W. Langley, J. S. Harris Jr., and R. F. W. Pease, "Sub-100 nm Gate Length GaAs MESFETs Fabricated by Molecular Beam Epitaxy and Electron Beam Lithography," Proc. IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Aug. 10-12, 1987, Ithica, New York, pp. 190-198.

 

105.   J. S. Johannessen, J. S. Harris, Jr., D. B. Rensch, H. V. Winston, A.T. Hunter, C. Kocot and A. Bivas "The Influence of Substrates on Implanted Layer Characteristics", Proc.14th International Symposium on GaAs and Related Compounds, September 1987, Crete, Greece. pp. 113-116

 

106.   C. Webb, S.-L. Weng,  J. N., Eckstein,  N. Missert, K. Char, D. G. Schlom, E. S. Hellman, M. R. Beasley, A. Kapitulnik and J. S. Harris, Jr., "Growth of High Tc Superconducting Thin Films using Molecular Beam Epitaxy Techniques," Appl. Phys. Lett., 51 (15) pp. 1191, October 1987. 

 

107.   J. Hwang, P. Pianetta, C. K. Shih, W. E. Spicer, Y.-C. Pao and J. S. Harris, Jr., "Determination of the Natural Valence-Band Offset in InxGa1-xAs System," Appl. Phys. Lett., 51 (20) pp. 1632 - 1634, November 1987.

 

108.   G. W. Yoffe, D. G. Schlom and J. S. Harris, Jr., "Modulation of Light by Electrically Tunable Multi-Layer Interference Filter," Appl. Phys. Lett .51 (23), pp. 1876-1878, December 1987.

 

109.   K. Yoh and J. S. Harris, Jr., "Complementary MODFET Circuits Consisting of Pseudomorphic N-MODFET and Double Heterojunction P-MODFET," by MBE, IEDM Washington, DC, December 1987, pp. 892.

 

110.