PUBLICATIONS

J. S. Harris, Jr.

 

Stanford University (1965-68)

 

1.     J. S. Harris, W. L. Snyder, J. L. Moll, and G. L. Pearson, "The Effects of Uniaxial Stress on the Electrical Resistivity of n-Type Boat Grown and Liquid Epitaxial GaAs," IEEE Trans. Elect Dev. ED-14, 690 (1968).

 

2.     J. S. Harris and W. L. Snyder, "Homogeneous Solution Grown Epitaxial GaAs by Tin Doping," Solid State Electron. 12, 337 (1969).

 

3.     J. S. Harris, Y. Nannichi, and G. L. Pearson, "Ohmic Contacts to Solution Grown Gallium Arsenide", J. Appl. Phys., 40, 4575 (1969).

 

4.     J. S. Harris, J. L. Moll, and G. L. Pearson, "The Effects of Uniaxial Stress on the Electrical Resistivity and the Gunn Effect in n-Type GaAs", Phys. Rev. B. 1,1660 (1970).

 

Rockwell International Science Center (1969-82)

 

5.     J. S. Harris and F. Eisen, "The Annealing of Damage in Ion Implanted Gallium Arsenide", Radiation Effects 7, 123 (1970).

 

6.     J. S. Harris, "The Effects of Dose Rate and Implantation Temperature on Lattice Damage and Electrical Activity in Ion Implanted GaAs", Proc. 2nd International. Conf. on Ion Implantation Semiconductors May, 1971, ed. I. Ruge and J. Graul (Springer-Verlag, Berlin, 1971) p.157.

 

7.     J. T. Longo, J. S. Harris, E. R. Gertner, and J. C. Chu, "Improved Surface Properties of Solution Grown GaAs and Pb1-xSnxTe Epitaxial Layers: A New Technique", J. Crystal Growth 15, 107  (1972).

 

8.     J. T. Longo, E. R. Gertner, and J. S. Harris, "Material Properties of Solution Grown Pb1-x SnxTe", Proc. IV-VI Conference, Mar. 24-25, 1972 Philadelphia, Pa.

 

9.     J. T. Longo, E. R. Gertner, and J. S. Harris, "Material Properties of Solution Grown Pb1-x SnxTe", J. Nonmetals 1, 321 (1973).

 

10.  J. S. Harris, F. H. Eisen, B. Welch, J. D. Haskell, R. D. Pashley and J. W. Mayer, "Influence of Implantation Temperature and Surface Protection on Tellurium Implantation in GaAs", Appl. Phys. Lett. 21, 601 (1972).

 

11.  J. S. Harris, J. M. Harris, and H. L. Marcus, "Fluorine Ion Implantation Profiles in Gallium Arsenide as Determined by Auger Electron Spectroscopy", Appl. Phys. Lett. 21, 598 (1972).

 

12.  F. H. Eisen, J. S. Harris, B. Welch, R. D. Pashley, D. Sigurd and J. W. Mayer, "Properties of Tellurium Implanted Gallium Arsenide", Ion Implantation in Semiconductors and Other Materials, ed. B. L. Crowder (Plenum, New York, 1973), p. 631.

 

13.  J. S. Harris and F. H. Eisen, "The Influence of Radiation Damage on Ion Implantation", Proc. of the Radiation Effects Symposium, Los Angeles, CA, (1974), p. 3.

 

14.  F. H. Eisen, J. S Harris, B. Welch, R. D. Pashley, D. Sigurd and J. W. Mayer. "Properties of Tellurium Implanted GaAs", Proc. 3rd Annual Meeting on Ion Implantation in Semiconductors and other Materials, New York (1972).

 

15.  J. S. Harris, J. T. Longo, E. R. Gertner and J. E. Clarke, "The Phase Diagram and its Application to the Liquid Phase Epitaxial Growth of Pb1-xSnxTe," J. of Crystal Growth 28, 334 (1975).

 

16.  W. F. Hall, W. E. Tennant, J. A. Cape and J. S. Harris, "Non-destructive Determination of Energy Gap Grading in Thin Films by Optical Transmission Measurements," J. Vac. Sci. Technol. 13, 914 (1975).

 

17.  J. R. Waldrop and J. S. Harris, "Potential Profiling Across Semiconductor Junctions by Auger Electron Spectroscopy in the Scanning Electron Microscope," J. Appl. Phys. 46, 5214 (1975).

 

18.  R. Sahai, J. S. Harris, D. D. Edwall and F. H. Eisen, "Growth and Evaluation of LPE Graded Composition Al Gal As Layers for High Efficiency Graded Bandgap Solar Cells," J. Electronic Materials, 6, 645 (1977).

 

19.  J. A. Hutchby, R. Sahai and J. S. Harris,    "High Efficiency Graded Bandgap n/p AlxGa1-xAs Solar Cells," Proc. IEEE IEDM, Washington, D.C. 1975, p. 377.

 

20.  R. Sahai, J. S. Harris, R. C. Eden, L. 0. Bubulac and J. C. Chu, "Double Heterojunction Photocathode Devices",  CRC Crit. Rev. Sol. State Sci., 5, 565 (1975).

 

21.  S. H. Anderson, F. Scholl and J. S. Harris, "AlGaSb Alloys for 1.0Ķm to 1.8Ķm Heterojunction Devices," Proc. Sixth International Conference on GaAs and Related Compounds, ed. L. F. Eastman, (Institute of Physics, Bristol, 1977) 33b, 346 (1977).

 

22.  R. Sahai, D. D. Edwall, E. Cory and J. S. Harris, "High Efficiency Thin Window Ga1-xAlx As/GaAs Solar Cells", Proc. IEEE 12th Photovoltaic Specialists Conf., Baton Rouge, LA, (1976) p. 989.

 

23.  C. M. Garner, Y. D. Shen, J. S. Kim, G. L. Pearson, W. E. Spicer, J. S. Harris, and D. D. Edwall, "Auger Profiling of 'Abrupt' LPE Al Gal -xAs/GaAs Heterojunctions," J. Appl. Phys. 48, 3147 (1977).

 

24.  C. M. Garner, Y. D. Shen, J. S. Kim, G. L. Pearson, W. E. Spicer, J. S. Harris, D. D. Edwall and R. Sahai, "Auger Depth Profiling of Au-AlxGa1-xAs Interfaces and LPE AlxGa1-x-GaAs Heterojunctions," J. Vac. Sci. Technol. 14, 985 (l977).

 

25.  R. S. Miller and J. S. Harris, "Gallium Arsenide Concentrator System," Proc. AIAA Conf. on Future of Aerospace Power Systems, St. Louis, MO, (1977), p. 147.

 

26.  J. F. Madewell, A. A. Nussberger and J. S. Harris, "A Solar Power System with Gallium Arsenide Solar Cells," Proc. AIAA Conf. on Future of Aerospace Power Systems, St. Louis, MO (1977), p. 151.

 

27.  J. F. Madewell, A. A. Nussberger and J. S. Harris, "A Solar Power System with Gallium Arsenide Solar Cells," J. Energy.

 

28.  I. Deyhimy, J. S. Harris, R. C. Eden, D. D. Edwall, S. J. Anderson and L. 0. Bubulac. "GaAs Charge Coupled Devices", Appl. Phys. Lett. 32 , 383 (1978).

 

29.  M. J. Cohen and J. S. Harris. "(SN)x-GaAs Polymer Semiconductor Solar Cells", Appl. Phys. Lett. 33, 812 (1978).

 

30.  M. J. Cohen, J. S. Harris and J. R. Waldrop. "Carrier Transport at Grain Boundaries in Polycrystalline GaAs", Proc. Seventh International Conference on GaAs and Related Compounds, ed. C. M. Wolfe, (Institute of Physics, Bristol, 1979) 45, 263 (1978).

 

31.  I. Deyhimy, J. S. Harris, R. C. Eden. "GaAs CCD with High Transfer Efficiency", Proc. International CCD Conference, San Diego, CA  (1978), p. 117.

 

32.  I. Deyhimy, J. S. Harris, R. C. Eden, D. D. Edwall, R. J. Anderson. "High Speed GaAs CCD", Proc. IEEE IEDM, Washington, D.C., (1978), p. 927.

 

33.  I. Deyhimy, J. S. Harris, D. D. Edwall. "CCD's in GaAs and Related III-V Compounds" Proc. Seventh International Conference on GaAs and Related Compounds, ed. C. M. Wolfe, (Institute of Physics, Bristol, 1979) 45, 445 (1978).

 

34.  R. Sahai, D. D. Edwall and J. S. Harris. "High Efficiency AlGaAs/GaAs Concentrator Solar Cell Development", Proc. 13th IEEE Photovoltaic Specialists Conference, Washington, D.C., p. 946 (1978).

 

35.  H. D. Law, K. Nakano, L. R. Tomasetta and J. S. Harris. "Ionization Coefficients of Ga0.72Al0.28Sb Avalanche Photodetectors," Appl. Phys. Lett. 33, 948 (1978).

 

36.  H. D. Law, L. R. Tomasetta, K. Nakano, and J. S. Harris. "1.0-1.4Ķm High-Speed Avalanche Photodiodes," Appl. Phys. Lett. 33, 416 (1978).

 

37.  H. D. Law, J. S. Harris, K. C. Wong and L. R. Tomasetta. "GaAlAsSb/ GaSb Alloys: Material Preparation and Applications to Optoelectronic Devices”, Proc. Seventh International Conference on GaAs and Related Compounds, ed. C. M. Wolfe, (Institute of Physics, Bristol, 1979) 45, (1978), p. 420.

 

38.  R. Sahai, D. D. Edwall, and J. S. Harris "High Efficiency AlGaAs/GaAs Concentrator Solar Cells", Appl. Phys. Lett. 34, 147 (1979).

 

39.  J. A. Cape, J. S. Harris and R. Sahai, "Spectrally Split Tandem Cell Converter Studies", Proc. 13th IEEE Photovoltaic Specialists Conference, Washington, DC, 1978, p. 881.

 

40.  J. A. Cape, R. Sahai, and J. S. Harris, "20 KW Gallium Arsenide Photovoltaic Dense Array for Central Receiver Concentrator Applications", Proc. 1979 Photovoltaic Solar Energy Conference, Berlin, (1979) p. 143.

 

41.  I. Deyhimy, J. S. Harris, Jr., R. C. Eden and R. J. Anderson, "259 Gate GaAs CCD Shift Register for High Speed Applications", Proc. 5th International Conference on Charge Coupled Devices, Edinburgh (1979), p. 217.

 

42.  I. Deyhimy, J. S. Harris, Jr., R. C. Eden and R. J. Anderson "Reduced Geometry GaAs CCD for High Speed Signal Processing" Proc. 1979 International Conf. Solid State Devices, Tokyo, (1979).

 

43.  I. Deyhimy, J. S. Harris, Jr., R. C. Eden and R. J. Anderson "Reduced Geometry GaAs CCD for High Speed Signal Processing", J. J. Appl. Phys 19, 269 (1979).

 

44.  H. T. Yang, Y. D. Shen, D. D. Edwall, D. L. Miller and J. S. Harris, Jr., "Barrier Height Enhancement in Heterojunction Schottky Barrier Solar Cells", IEEE Trans. Electron Dev. ED-27, 851 (1980).

 

45.  C. M. Garner, C. Y. Su, W. E. Spicer, P. D. Edwood, D. Miller and J. S. Harris, "Minimum Al0.5Ga0.5As-GaAs Heterojunction Width Determined by Sputter-Auger Technique", Appl. Phys. Lett. 34 , 610  (1979).

 

46.  Y. Z. Liu, I. Deyhimy, J. S. Harris, Jr., R. J. Anderson and Jacob Appelbaum, "Observation of Charge Storage and Charge Transfer in a GaAlAsSb/GaSb CCD", Appl. Phys. Lett. 36, 458 (1980).

 

47.  Stanley W. Zehr, D. L. Miller and J. S. Harris, Jr. "Intercell Ohmic Contacts for High Efficiency Multijunction Solar Converters" Proc. 3rd High Efficiency & Radiation Damage Solar Cell Meeting, Cleveland, OH (1979), NASA Conf. Publication # 2097, p. 283.

 

48.  I. Deyhimy, J. S. Harris, Jr., R. C. Eden, R. J. Anderson, and D. D. Edwall, "An Ultra High Speed GaAs CCD", Proc. IEEE IEDM, Washington, D.C., (1979), p. 619.

 

49.  I. Deyhimy, J. S. Harris, Jr. and R. C. Eden, "Application of GaAs CCD's to High Speed Signal Processing", Proc. 1979 IEEE/MTT-S First Specialty Conference on Gigabit Logic for Microwave Systems, Orlando, Florida, (1979), p. 120.

 

50.  C. M. Garner, C. Y. Su, Y. D. Shen, C. S. Lee, G. L. Pearson, W. E. Spicer, D. D. Edwall, D. Miller and J. S. Harris, "Interface Studies of Al Gal As-GaAs Heterojunctions", J. Appl. Phys. 50, 3383, (1979).

 

51.  H. Kroemer, Wu-Yi Chien, J. S. Harris, Jr. and D. D. Edwall, "Measurement of Isotype Heterojunction Barriers by C-V Profiling", Appl. Phys. Lett. 36, 295 (1980).

 

52.  S. W. Zehr, J. A. Cape and J. S. Harris, Jr., "Performance Losses in High Efficiency Monolithic Multijunction Solar Cells", Proc. 14th IEEE Photovoltaic Specialists Conference, San Diego, CA, (1980), p. 346.

 

53.  Y. Z. Liu, H. T. Yang and J. S. Harris, Jr., "Low Bandgap (0.7 to 1.1 eV) Solar Cells in the GaAlAsSb/GaSb System", Proc. 14th IEEE Photovoltaic Specialists Conference, San Diego, CA,  (1980), p. 1338.

 

54.  H. T. Yang, D. L. Miller, Y. D. Shen, D. D. Edwall and J. S. Harris, Jr., "Heterojunction Schottky Barrier Solar Cells", Proc. 14th IEEE Photovoltaic Specialists Conference, San Diego, CA, (1980), p. 1333.

 

55.  I. Deyhimy, R. C. Eden, D. D. Edwall, R. J. Anderson and J. S. Harris, Jr., "A 500 MHz GaAs Charge Coupled Device", Appl. Phys. Lett. 36, 151,  (1980).

 

56.  Ira Deyhimy, R. C. Eden and J. S. Harris, Jr. "GaAs and Related Heterojunction Charge Coupled Devices", IEEE Trans. Electron Dev., ED-27, 1172 (1980).

 

57.  Marshall J. Cohen, M. D. Paul, D. L. Miller, J. R. Waldrop and J. S. Harris, Jr., "Schottky Barrier Formation in Polycrystal GaAs", J. Vac. Sci. Technol. 17, 899  (1980).

 

58.  S. W. Zehr, H. T. Yang, J. J. J. Yang, J. J. Coleman, D. L. Miller, W. J. Schaffer, P. J. Stocker and J. S. Harris, Jr., "A Non-Lattice Matched Monolithic Multicolor Solar Cell", Proc. AS/ISES Solar Jubilee, Phoenix, AZ,  (1980), p. 986.

 

59.  J. A. Cape, J. S. Harris, Jr. and James Wiczer, "Gallium Arsenide Photovoltaic Dense Array for Concentrator Applications", Proc. AS/ISES Solar Jubilee, Phoenix, AZ,  (1980), p. 1072.

 

60.  Marshall J. Cohen, J. A. Cape, M. D. Paul, D. L. Miller and J. S. Harris, Jr., "Solar Cell Characterization at Rockwell International", Proc. SPIE Meeting, San Diego, CA. (1980), p. 109.

 

61.  I. Deyhimy, J. S. Harris, Jr., R. C. Eden and R. J. Anderson, "Analog Signal Processing Complement to GaAs Digital ICs", Proc. IEEE GaAs Integrated Circuits Symp., Lake  Tahoe, NV (1979), p. 157.

 

62.  I. Deyhimy, J. S. Harris, Jr., R. C. Eden, R. J. Anderson and D. D. Edwall, "An Ultra-high Speed GaAs CCD", Proc. IEEE IEDM, Washington, D. C., (1979), p. 619.

 

63.  Y. Z. Liu, I. Deyhimy, R. J. Anderson, J. S. Harris, Jr. and L. R. Tomasetta, "GaAlAs/GaAs Heterojunction Schottky Barrier Gate CCD", Proc. IEEE IEDM, Washington, D. C., (1979), p. 622.

 

64.  S. W. Zehr, H. T. Yang, J. J. Coleman, D. L. Miller, J. J. J. Yang, R. P. Ruth and J. S. Harris, Jr., "Monolithic Multicolor Solar Conversion, Proc. SPIE Meeting, San Diego, CA. (1980), p. 125.

 

65.  J. S. Harris, R. P. Ruth, S. W. Zehr, J. J. Coleman, R. D. Dupuis, H. T. Yang and D. L. Miller, "Development of Stacked Multiple Bandgap Solar Cells", Proc. IEEE  IEDM, Washington, D. C., (1979), p. 694.

 

66.  J. J. Wiczer, J. A. Cape and J. S. Harris, Jr., "Gallium Arsenide Photovoltaic Dense Array for Concentrator Applications", Proc. SPIE Meeting, San Diego, CA. (1980), p. 114.

 

67.  D. L. Miller and J. S. Harris, Jr., "MBE GaAs Heteroface Solar Cells Grown on Ge", Appl. Phys. Lett. 37, 1104 (1980).

 

68.  I. Deyhimy, R. J. Anderson, Richard C. Eden and J. S. Harris, Jr., "Charge Coupled Devices in Gallium Arsenide", IEE-Proc. 127, Part I, 278 (1980).

 

69.  Y. Z. Liu, I. Deyhimy, R. J. Anderson, R. A. Milano, M. J. Cohen, J. S. Harris, Jr., and L. R. Tomasetta, "A Backside-Illuminated Imaging AlGaAs/GaAs Charge Coupled Device", Appl. Phys. Lett. 37, 803 (1980).

 

70.  J. S. Harris, Jr. and L. R. Reitz, "High Performance AlGaAs/GaAs Heterojunction CCDs for Imaging Applications", Proc. Rocky Mountain Guidance and Control Conference, (1981), p. 122.

 

71.  J. S. Harris, Jr. and L. R. Reitz, "High Performance AlGaAs/GaAs Heterojunction CCDs for Imaging Applications", Adv. Astronomical Sciences 45, 197 (1981).

 

72.  D. L. Miller, S. W. Zehr and J. S. Harris, Jr., "GaAs/AlGaAs Tunnel Junctions for Multiple Bandgap Solar Cells", J. Appl. Phys. 53, 744 (1982).

 

73.  D. L. Miller, J. S. Harris, Jr. and P. M. Asbeck, "An MBE AlGaAs/GaAs Heterojunction Bipolar Transistor", Proc. Ninth International Conference on GaAs and Related Compounds, ed. T. Sugano, (Institute of Physics, Bristol, 1982) 63, (1981), p. 579.

 

74.  P. M. Asbeck, D. L. Miller, R. A. Milano, J. S. Harris, Jr., G. R. Kaelin and R. Zucca,"(Ga,Al)As/GaAs Bipolar Transistors for Digital Integrated Circuits", Proc. IEEE IEDM, Washington, D. C., (1981), p. 629.

 

75.  J. S. Harris, Jr., D. L. Miller and P. M. Asbeck, "Heterojunction Bipolar Transistors”, Proc. 14th International Conf. Solid State Devices, Tokyo, Japan (1982), p.199.

 

76.  J. S. Harris, Jr., D. L. Miller and P. M. Asbeck, "Heterojunction Bipolar Transistors”, J. J. Appl. Phys. 22, 379 (1982).

 

Stanford University (1982-present)

 

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77.      E. S. Hellman, J. S. Harris, Jr., C. B. Hanna and R. B. Laughlin, "One Dimensional Polaron Effects and Current Inhomogeneities in Sequential Phonon Emission," Physica 134B, pp. 41-46 (1985)

 

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78.      C. B. Hanna, E. S. Hellman and R. B. Laughlin, "Mechanism of Current Modulation by Optic Phonons in Heterojunction Tunneling Experiments," Phys. Rev. B, 34 (8) pp. 5475-83, October 1986

 

79.      E. S. Hellman, P. M. Pitner, A. Harwit, D. Liu, G. W. Yoffe, J. S. Harris, Jr., B. Caffee and T. Hierl, "Molecular Beam Epitaxy of Gallium Arsenide using Direct Radiative Substrate Heating," J. Vac. Sci. Technol. B 4 (2) pp. 574-7 Mar/Apr 1986.

 

80.      R. L. Lee, W. J. Schaffer, Y. G. Chai, D. Liu and J. S. Harris, Jr., "Material Effects on the Cracking Efficiency of Molecular Beam Epitaxy Arsenic Cracking Furnaces," J. Vac. Sci. Technol. B 4 (2) pp. 568-70, Mar/Apr 1986. 

 

81.      S. M. Koch, S. J. Rosner, D. G. Schlom and J. S. Harris, Jr., "The Growth of GaAs on Si by Molecular Beam Epitaxy," Proc. Annual Spring Meeting of the Materials Research Society, Palo Alto, CA, April 1986.  Heteroepitaxy on Silicon, ed. by J. C. C. Fan and J. M. Poate, pp. 37.

 

82.      S. J. Rosner, S. M. Koch, S. Laderman and J. S. Harris, Jr., "Microstructure of Thin Layers of MBE-Grown GaAs on Si Substrates," Proc. Annual Spring Meeting of the Materials Research Society, Palo Alto, CA, April 1986, Heteroepitaxy on Silicon, ed. by J. C. C. Fan and J. M. Poate, pp. 77.

 

83.      Y. C. Pao, D. Liu, W. S. Lee and J. S. Harris, Jr., "Effect of Hydrogen on Undoped and Lightly Si-Doped Molecular Beam Epitaxial GaAs Layers," Appl. Phys. Lett. 48 (19) pp. 1291-3, May 1986.

 

84.      E. S. Hellman and J. S. Harris, Jr., "Energy-Momentum Relation for Polarons Confined to One Dimension," Phys. Rev. B  33 (12) pp. 8284-90, June 1986. 

 

85.      Y. C. Pao, T. Hierl and T. Cooper, "Surface Effect-Induced Fast Be Diffusion in Heavily Doped GaAs Grown by Molecular Beam Epitaxy," J. Appl. Phys. 60 (1), pp. 201-204, July 1986.

 

86.      E. C. Larkins, E. S. Hellman, D. G. Schlom, J. S. Harris, Jr., M. H. Kim and G. E. Stillman, "Reduction of the Acceptor Impurity Background in GaAs Grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 49 (7) pp. 391-3, August 1986. 

 

87.      K. Yoh and J. S. Harris, Jr., "A p-Channel Double Heterojunction GaAs/AlGaAs Modulation Doped Field Effect Transistor," Extended Abstracts of 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, Japan, August 1986, pp. 773.

 

88.      S. E. Harris and J. S. Harris, Jr., “”Stanford University: Stanford Electronics Laboratory and Microwave Ginzton Laboratory,” Forthieth Anniversary of the Joint Services Electronics Program,” ed. A. Shostak (ANSER, Arlington, VA, 1986)

 

89.      A. Harwit, J. S. Harris, Jr. and A. Kapitulnik, "Calculated Quasi-Eigenenstates and Quasi-Eigenenergies of Quantum Well Superlattices in an Applied Field," J. Appl. Phys. 60 (9) pp., November, 1986, pp. 3211-13.

 

90.      E. S. Hellman and J. S. Harris, Jr., "Polaron Transport in Quasi-One-Dimensional Semiconductor Heterostructures," Surface Science, 174 (1986) pp. 459-465.

 

91.      R. Hull, S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Atomic Structure of the GaAs/Si Interface," Appl. Phys. Lett. 49 (25) pp. 1714-16, 22 December 1986. 

 

92.      S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Nucleation and Initial Growth of GaAs on Si Substrate," Appl. Phys. Lett. 49 (26) pp. 1764-66, 29 December 1986.

 

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93.      E. C. Larkins, E. S. Hellman, D. G. Schlom, J. S. Harris, Jr., M. H. Kim and G. E. Stillman, "GaAs with Very Low Acceptor Impurity Background Grown by Molecular Beam Epitaxy," J. Cryst. Growth 81, pp. 344-348 (1987).

 

94.      E. S. Hellman and J. S. Harris, Jr., "Polynomial Kinetic Energy Approximation for Direct-Indirect Heterostructures," Superlattice and Microstructures, 3 pp. 167-169 (1987)

 

95.      S. M. Koch, S. J. Rosner, R. Hull, G. W. Yoffe and J. S. Harris, Jr., "The Growth of GaAs on Si by MBE," J. Cryst. Growth 81 pp. 205-213 (1987). 

 

96.      E. S. Hellman and J. S. Harris, Jr, "Infra-Red Transmission Spectroscopy of GaAs during Molecular Beam Epitaxy," J. Cryst. Growth, 81 pp. 38-42 (1987).

 

97.      A. Harwit and J. S. Harris, Jr., "Observation of Stark Shifts in Quantum Well Intersubband Transitions," Appl. Phys. Lett.  50 (11), pp. 685-87, March 1987.

 

98.      K. Yoh and J. S. Harris, Jr., "A p-Channel Strained Quantum Well Modulation Doped Field Effect Transistor," Extended Abstracts of the Japan Society of Applied Physics Meeting, Tokyo, March 1987, pp. 804.83.

 

99.      R. Hull, A. Fischer-Colbrie, S. M. Koch, and J. S. Harris, Jr., "Nucleation of GaAs on Vicinal Si(100) Surfaces", Mat. Res. Soc. Symp. Proc. 94, 25 (1987).

 

100.   S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Structural Characterization of Thin, Low Temperature Films of GaAs on Si Substrates," Proc. Spring 1987 MRS Meeting, Anaheim, CA

 

101.   K. Nauka, G. A. Reid, S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Deep Electron Traps in MBE GaAs on Si," Proc. Spring 1987 MRS Meeting, Anaheim, CA.

 

102.   J. S. Harris, Jr., S. M. Koch and S. J. Rosner, "The Nucleation and Growth of GaAs on Si," Proc. Spring 1987 MRS Meeting, Anaheim, CA.

 

103.   E. Wolak, A. Harwit and J. S. Harris, Jr., "Comment on Observation of a Negative Differential Resistance due to Tunneling through a Single Barrier into a Quantum Well," Appl. Phys. Lett. 50 (22), June 1987.

 

104.   D. R. Allee, P. R. de la Houssaye, D. G. Schlom, B. W. Langley, J. S. Harris Jr., and R. F. W. Pease, "Sub-100 nm Gate Length GaAs MESFETs Fabricated by Molecular Beam Epitaxy and Electron Beam Lithography," Proc. IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Aug. 10-12, 1987, Ithica, New York, pp. 190-198.

 

105.   J. S. Johannessen, J. S. Harris, Jr., D. B. Rensch, H. V. Winston, A.T. Hunter, C. Kocot and A. Bivas "The Influence of Substrates on Implanted Layer Characteristics", Proc.14th International Symposium on GaAs and Related Compounds, September 1987, Crete, Greece. pp. 113-116

 

106.   C. Webb, S.-L. Weng,  J. N., Eckstein,  N. Missert, K. Char, D. G. Schlom, E. S. Hellman, M. R. Beasley, A. Kapitulnik and J. S. Harris, Jr., "Growth of High Tc Superconducting Thin Films using Molecular Beam Epitaxy Techniques," Appl. Phys. Lett., 51 (15) pp. 1191, October 1987. 

 

107.   J. Hwang, P. Pianetta, C. K. Shih, W. E. Spicer, Y.-C. Pao and J. S. Harris, Jr., "Determination of the Natural Valence-Band Offset in InxGa1-xAs System," Appl. Phys. Lett., 51 (20) pp. 1632 - 1634, November 1987.

 

108.   G. W. Yoffe, D. G. Schlom and J. S. Harris, Jr., "Modulation of Light by Electrically Tunable Multi-Layer Interference Filter," Appl. Phys. Lett .51 (23), pp. 1876-1878, December 1987.

 

109.   K. Yoh and J. S. Harris, Jr., "Complementary MODFET Circuits Consisting of Pseudomorphic N-MODFET and Double Heterojunction P-MODFET," by MBE, IEDM Washington, DC, December 1987, pp. 892.

 

110.   R. Hull, J. C. Bean, R. Leibenguth, S. M. Koch and J. S. Harris, Jr., "Relationship Between Substrate Cleaning, Surface Structure and Nucleation Phenomena in Heteroepitaxial Growth on Si", extended Abstracts of Electrochemical, Materials Research Society Meeting, Honolulu, Hawaii, Dec, 1987, pp. 293-300

 

111.   Y. C. Pao, N. Gabrial, D. Liu, J. S. Harris, Jr., L. Parechanian, E. R. Webber, “Device and material characterization of molecular-beam epitaxial (110) GaAa/AlGaAs,” J. Electron. Mat. 16 (4), pp. A16, (1987)

 

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112.   E. S. Hellman and J. S. Harris, Jr., "Hot Electron Transport Parallel to Strong Magnetic Fields in Gallium Arsenide,"Solid State Electronics, 31, No. 3/4, pp. 785-788, (1988).

 

113.   J. Hwang, C. K. Shih, P. Pianetta, G. D. Kubiak, R. H. Stulen, L. R. Dawson, Y. C. Pao and J. S. Harris, Jr., "Effect of Strain on the Band Structure of GaAs and In0.2Ga0.8As", Appl. Phys. Lett. 52 (4), pp. 308-310, January 1988.

 

114.   S. Y. Chou, E. Wolak, J. S. Harris, Jr. and R. F. W. Pease, "A Lateral Resonant Tunneling FET," Journal of Superlattices and Microstructures, 4 (2), pp. 17 – 20, 1988 

 

115.   R. Allee, P. R. de la Houssaye, D. G. Schlom, J. S. Harris, Jr. and R. F. W. Pease, "Sub-100 nm Gate Length GaAs MESFETs and MODFETs Fabricated by a Combination of Molecular Beam Epitaxy and Electron Beam Lithography," Proc. 31st International Symposium on Electron, Ion, and Photon Beams, J.  Vac. Sci. Technol B, 6 (1), pp. 328-332, Jan./Feb. 1988.

 

116.   S. Y. Chou, E. Wolak, J. S. Harris, Jr. and R. F. W. Pease, "Resonant Tunneling of Electrons of 1 or 2-Degrees of Freedom," Appl. Phys. Lett. 52 (8), pp. 657-659, February 1988.

 

117.   P. R. de la Houssaye, D. R. Allee, Y. C. Pao, D. G. Schlom, J. S. Harris, Jr., and R. F. W. Pease, "Electron Saturation Velocity Variation in InGaAs and GaAs Channel MODFETs for Gate Lengths to 550 Ā," IEEE Electron Device Lett., 9 (3), pp. 148-150, March 1988.

 

118.   Y. C. Pao, W. Ou, J. S. Harris, Jr., "(110)-Oriented GaAs MESFETs", IEEE Elect. Dev. Lett. 9, (3), pp. 119 - 123, March 1988. 

 

119.   E. S. Hellman, D. G. Schlom, N. Missert, K. Char, J. S. Harris, Jr., M. R. Beasley, A. Kapitulnik, T. H. Geballe, J. N. Eckstein, S. L. Weng and C. Webb, "Molecular Beam Epitaxy and Deposition of High Tc Superconductors," J. Vac. Sci. Technol. B, 6 (2), pp. 799-803, Mar/Apr. 1988. 

 

120.   J. W. Adkisson, T. I. Kamins, S. M. Koch, J. S. Harris, Jr., S. J. Rosner, G. A. Reid and K. Nauka, "Processing and Characterization of GaAs Grown into Recessed Silicon," J. Vac. Sci. Technol. B, 6 (2), pp. 717-719, Mar/Apr 1988.

 

121.   M. J. Lin, E. C. Larkins, Y. C. Pao, D. Liub, G. Yoffe, E. Wolak, T. Ma and J. S. Harris, Jr., "Characterization of Al0.25Ga0.75As Grown by Molecular Beam Epitaxy," J. Vac. Sci. Technol. B, 6 (2), pp. 631-635, Mar/Apr 1988.

 

122.   R. Hull, S. M. Koch, and J. S. Harris, Jr., "Substrate Surface Structure and Nucleation Phenomena in Epitaxial Growth of GaAs on Vicinal Si (100) Substrates", Mat. Res. Soc. Symp. Proc. 116, pp. 111 (1988).

 

123.   E. C. Larkins, Y. C. Pao, D. Liu, J. Lin, G. Yoffe and J. S. Harris, Jr., "Summary Abstract:  Growth of GaAs and AlGaAs on misoriented (110) GaAs by Molecular Beam Epitaxy," J. Vac. Sci. Technol. B, 6 (2), pp. 636-637, Mar/Apr 1988

 

124.   W. Yoffe, D. G. Schlom and J. S. Harris, Jr., "Summary Abstract:  MBE Growth of Tunable Multi-Layer Interference Optical Modulators," J. Vac. Sci. Technol. B. 6 (2), pp. 688, Mar/Apr 1988. 

 

125.   D. G. Schlom, J. N. Eckstein, E. S. Hellman, C. Webb, F. Turner, J. S. Harris, Jr., M. R. Beasley and T. H. Geballe, "Molecular Beam Epitaxy of Layered DY-BA-CU-O Compounds", Materials Research Society, Reno, NV, April 1988, Proc. Spring MRS Meeting, Reno, NV, April 1988, pp. 197-200, (1988).

 

126.   J. W. Adkisson, T. I. Kamins, S. M. Koch, J. S. Harris, Jr., S. J. Rosner, K. Nauka and G. A. Reid, "Growth of GaAs on Si in Masked, Etched Trenches", Proc. Spring MRS Meeting, Reno, NV, April 1988, 116, Heteroepitaxy on Silicon: Fundamentals, Structures and Devices, ed. H. K. Choi, R. Hull, H. Ishiwars and R. J. Nemanich.

 

127.   S. Y. Chou and J. S. Harris, Jr., "Room-Temperature Observation of Resonant Tunneling Through a AlGaAs/GaAs Quasi-Parabolic Quantum Well Grown by MBE," Appl. Phys. Lett. 52 (17), pp. 1422-1424, 25 April 1988. 

 

128.   S. M. Koch, R. Hull, S. J. Rosner, and J. S. Harris, Jr., "GaAs/Si Nucleation and Buffer Layer Growth", Mat. Res. Soc. Symp. Proc. 116, pp. 111 (1988).

 

129.   S. Y. Chou, J. S. Harris, Jr. and R. F. W. Pease, "A Lateral Resonant Tunneling Field-Effect Transistor," Appl. Phys. Lett. 52 (23), pp. 1982-1984, June 1988.

 

130.   R. Hull, J. C. Bean, N. Chand, R. E. Leibenguth, D. Bahnck, S. M. Koch and J. S. Harris, Jr., "Heteronucleation Onto Si Surfaces", Mat. Res. Soc. Symp. Proc. 102, 1988. 

 

131.   E. Wolak, K. L. Lear, P. M. Pitner, E. S. Hellman, G. B. Park, T. Weil and J. S. Harris, Jr., "Elastic Scattering Centers in Resonant Tunneling Diodes", Appl. Phys. Lett. 53 (3), pp. 201-203, July 1988. 

 

132.   E. Wolak, K. L. Lear, P. M. Pitner, G. B. Park, E. S. Hellman, T. Weil and J. S. Harris, Jr., "The Effect of Elastic Scattering Centers on the Current Voltage Characteristics of Double Barrier Resonant Tunneling Diodes", Proc. SPIE 43, 1988.

 

133.   J. D. Morse, M. D. Pocha, R. W. Dutton, G. D. Anderson, J. W. Adkisson, "Picosecond Pulsing and Sampling by GaAs Photodetectors Fabricated on Silicon Substrates," Proc. SPIE Conference on Optoelectronics/Fiber Optics and Lasers, Boston, MA, August 1988.

 

134.   S. Munnix, D. Bimberg, D. E. Mars, J. N. Miller, E. C. Larkins and J. S. Harris, Jr., "High Carrier Densities in GaAs/AlGaAs Modulation n-Doped Quantum Wells:  From One- to Two-Component Plasma," Proc. 19th ICPS, Warsaw, pp. 15-19, August 1988.

 

135.   D. Liu, T. Zhang, R. A. LaRue, J. S. Harris, Jr. and T. W. Sigmon, "Deep Level Transient Spectroscopy Study of GaAs Surface States Treated With Inorganic Sulfides," Appl. Phys. Lett.  53 (12), pp. 1059-1061, September 1988.

 

136.   E. S. Hellman, K. L. Lear and J. S. Harris, Jr., "Limit Cycle Oscillations in Negative Differential Resistance Devices", J. Appl. Phys. 64 (5) pp. 2798-2800, September, 1988.

 

137.   K. L. Lear, K. Yoh and J. S. Harris, Jr., "Monolithic Integration of GaAs/AlAs Resonant Tunnel Diode Load and GaAs Enhancement-Mode MESFET Drivers for Tunnel Diode FET Logic Gates," Proc. 15th International Symposium on Gallium Arsenide and Related Compounds, 96, (9), pp. 593-604, Atlanta, GA, September 1988.

 

138.   B. Lee, M. H. Kim, S. S. Bose, G. E. Stillman, E. C. Larkins, E. S. Hellman, D. G. Schlom and J. S. Harris, Jr., "Sulfur Incorporation in Undoped High Purity n-Type GaAs Grown by Molecular Beam Epitaxy," Proc. 15th International Symposium on Gallium Arsenide and Related Compounds, 96, (2), pp. 23-28, Atlanta, GA, September 1988.

 

139.   R. Köhrbrück, S. Munnix, D. Bimberg, E. C. Larkins and J. S. Harris, Jr., "Flux Ratio Dependence of Growth Rate, Interface Quality, and Impurity Incorporation in MBE Grown AlGaAs/GaAs Quantum Wells," Proc. 15th International Symposium on Gallium Arsenide and Related Compounds, 96, (2), pp. 65-68, Atlanta, GA, September 1988.

 

140.   E. C. Larkins, D. Liu, Y. C. Pao, M. J. Lin, G. W. Yoffe and J. S. Harris, Jr., "Characterization of AlGaAs and GaAs Materials and Interfaces Grown on Misoriented (110) GaAs by MBE," Proc. 15th International Symposium on Gallium Arsenide and Related Compounds, 96, (2), pp. 53-56, Atlanta, GA, September 1988. 

 

141.   D. Liu, E. C. Larkins, T. Zhang, T. T. Chiang, R. A. LaRue, T. Sigmon, W. E. Spicer and J. S. Harris, Jr., "Sodium Sulfide Treated (100) and Misoriented (110) GaAs Surfaces," Proc. 15th International Symposium on Gallium Arsenide and Related Compounds, 96, (6), pp. 371-374, Atlanta, GA, September 1988.

 

142.   D. G. Schlom, J. N. Eckstein, E. S. Hellman, S. K. Streiffer, J. S. Harris, Jr., M. R. Beasley, J. C. Bravman, T. H. Geballe, C. Webb, K. von Dessonneck and F. Turner, "Molecular Beam Epitaxy of Layered Dy-Ba-Cu-O Compounds," Appl. Phys. Lett. 53 (17), pp. 1660-1662, October 1988.           

 

143.   T. Ma, D. Ueda, W-S. Lee, J. Adkisson, J. S. Harris Jr.  "Influence of Buffer Layer Thickness on DC Performance of GaAs/AlGaAs Heterojunction Bipolar Transistors Grown on Silicon Substrates," IEEE Electron Device Lett. 9 (12) pp. 657-659, December 1988.

 

144.   A. Reid, K. Nauka, S. J. Rosner, S. M. Koch and J. S. Harris, Jr., "Spatial Inhomogeneities of the Luminescence and Electrical Properties of MBE Grown GaAs on Si", Proc. Mat. Res. Soc. Symp., 116, 1988. 

 

1 9 8 9

 

145.   S. K. Diamond, E. Özbay, M. J. W. Rodwell, D. M. Bloom, Y.C. Pao and J. S. Harris, "Resonant Tunneling Diodes for Switching Applications," Appl. Phys. Lett, 54 (2), pp, 153-155, January 1989. 

 

146.   M. M. Fejer, S. J. B. Yoo, R. L. Byer, A. Harwit and J. S. Harris, Jr., "Observation of Extremely Large Quadratic Susceptibility at 9.6 - 10.8Ķm in Electric-field-biased AlGaAs Quantum Wells," Phys, Rev. Lett., 62, pp. 1041-1044 (1), February 1989. 

 

147.   R. Köhrbröck, S. Munnix, D. Bimberg, E. C. Larkins and J. S. Harris, Jr., "Influence of the As:Ga Flux Ratio on Growth Rate, Interface Quality, and Impurity Incorporation in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 54 (7), pp. 623-625, February 1989.

 

148.   J. S. Harris, Jr., J. N. Eckstein, E. S. Hellman and D. G. Schlom, "MBE Growth of High Critical Temperature Superconductors," J. Crystal Growth 95, pp. 607-616, February 1989.  

 

149.   S. Munnix, D. Bimberg, D. E. Mars, J. N. Miller, E. C. Larkins, and J. S. Harris Jr., "Many-Body Effects in the Luminescence Spectra of GaAs/AlGaAs Modulation Doped Heterostructures," ACTA Physica Polonica, A75, pp. 33-37, (1989).

 

150.   S. K. Diamond, E. Ozbay, M. J. W. Rodwell, D. M. Bloom, Y. C. Pao, E. Wolak and J. S. Harris, "Fabrication of Resonant Tunneling Diodes for Integrated Circuit and Microwave Applications," IEEE Electron Device Letters, 10, pp. 104-106, March 1989. 

 

151.   E. S. Hellman "Umklapp Electron-Electron Scattering Resistivity in YBa2Cu3O7-x," IEEE Elect. Dev. Lett., 10, (3), pp. 104-106, March 1989.

 

152.   E. Wolak, K. Shepard, S. Y. Chou and J. S. Harris, Jr., "Elastic Scattering in Resonant Tunneling Devices With One Degree of Freedom," J. of Superlattices and Microstructures, 5, (2), pp. 251-253 (1989)

 

153.   D. G. Schlom, W. S. Lee, T. Ma and J. S. Harris, Jr., "Reduction of Gallium-Related Oval Defects," J. Vac. Sci. & Technol. B7, (2), pp. 296-298, Mar/Apr 1989.

 

154.   J. N. Eckstein, D. G. Schlom, E. S. Hellman, K. E. von Dessonneck, Z. J. Chen, C. Webb, F. Turner, J. S. Harris, Jr., M. R. Beasley and T. H. Geballe, "Epitaxial Growth of High Temperature Superconducting Thin Films," J. Vac. Sci. & Technol. B7, (2), pp. 319-323, Mar/Apr 1989

 

155.   W. S. Lee, D. Ueda, T. Ma, Y. C. Pao, J. S. Harris, Jr., "Effect of Emitter-Base Spacing on the Current Gain of AlGaAs/GaAs Heterojunction Bipolar Transistors," IEEE Electron Device Letters 10, pp. 200-202, May 1989. 

 

156.   N. Nasserbakht, J. W. Adkisson, T. I. Kamins, B. A. Wooley, and J. S. Harris, Jr., "Monolithically Integrated Fiber-Optic Front-End Receiver in GaAs on Si Technology", Proc. VLSI Circuits Dig. Tech. Symposium, pp. 83, May 1989.

 

157.   E. S. Hellman, D. G. Schlom, A. F. Marshall, S. K. Streiffer, J. S. Harris, Jr., M. R. Beasley, J. C. Bravman, T. H. Geballe, J. N. Eckstein and C. Webb, "Phase Characterization of Dysprosium Barium Copper Oxide Thin Films Grown on Strontium Titanate by Molecular Beam Epitaxy," J. Mater. Res., 4, (3), pp. 476-495, May/Jun 1989

 

158.   J. M. Owens and D. J. Halchin, K. L. Lear, W. S. Lee and J. S. Harris Jr., "Microwave Characteristics of MBE Grown Resonant Tunneling Devices", Proc. IEEE/MTT-S International Microwave Symposium, June 1989, Long Beach, CA 

 

159.   D. G. Hill, W. S. Lee, T. Ma and J. S. Harris, Jr., "AlGaAs/InGaAs Strained-Base PnP Heterojunction Bipolar Transistors," Electron. Lett. 25, pp. 993-995, 1989.

 

160.   Y. C. Pao, D. Liu and J. S. Harris, Jr., "Molecular Beam Epitaxy AlGaAs/GaAs Grown in the Presence of Hydrogen" J. Crystal Growth, 95, pp. 305-308, 1989. 

 

161.   Y. C. Pao, and J. Franklin and J. S. Harris, Jr., "Influence of As4/Ga Flux Ratio on Be Incorporation in Heavily Doped GaAs Grown by Molecular Beam Epitaxy" J. Crystal Growth, 95, pp. 301-304, 1989. 

 

162.   P. Cheng, B. G. Park, S. D. Kim and J. S. Harris, Jr., "The X-Valley Transport in GaAs/AlAs Triple Barrier Structures" J. Appl. Phys. 65, (12), pp. 5199-5201, June 1989.

 

163.   J. N. Eckstein, J. S. Harris, Jr., D. G. Schlom, I. Bozovic, K. E. von Dessoneck and Z. J. Chen, "Development of Molecular Beam Epitaxial Growth of High Temperature Superconducting Compounds," Proc. International Superconductivity Electronics Conference, pp. 14-19, Tokyo, Japan, June 1989.

 

164.   S. Munnix, R. K. Bauer, D. Bimberg, J. S. Harris Jr., R. Köhrbrück, E. C. Larkins, Ch. Maierhofer, D. E. Mars and J. N. Miller, "Growth Kinetics, Impurity Incorporation, Defect Generation, and Interface Quality of MBE-grown AlGaAs/GaAs Quantum Wells: Role of group III and group V Fluxes," J. Vac. Sci. Technol., B7, (4) pp. 704-709, Jul/ Aug 1989. 

 

165.   P. Cheng and J. S. Harris, Jr., "The Effect of Si Doping in AlAs Barrier Layers of AlAs-GaAs-AlAs Double Barrier Resonant Tunneling Diodes," Appl. Phys. Lett. 55, (6), pp. 572-574, August 1989.

 

166.   D. Ueda, W. S. Lee, T. Ma, D. Costa, and J. S. Harris Jr.,  "GaAs/AlGaAs Power HBT on Silicon Substrate," Electron. Lett. 25, (19), pp. 1968-1269, September 1989.

 

167.   James S. Harris, “Photonics,” Brief Lessons in High Technology: Understanding the End of this Century to Capitalize on the Next, ed. James D. Meindl (Portable Stanford, Stanford, CA, 1989), pp. 31-61.

 

168.   S. Y. Chou, D. R. Allee, R. F. W. Pease and J. S. Harris, Jr., "New Lateral Resonant Tunneling FETs Fabricated Using Molecular Beam Epitaxy and Ultra-High Resolution Electron Beam Lithography", Proc. 16th International Symposium on GaAs and Related Compounds, pp. 875-879, Karuizawa, Japan, September 1989. 

 

169.   E. Wolak, B. G. Park, K. L. Lear and J. S. Harris, Jr., "Variation of the Spacer Layer Between two Resonant Tunneling Diodes," Appl. Phys. Lett., 55, pp. 1871-1873, October 1989.

 

170.   T. Ma, W. S. Lee, J. Adkisson and J. S. Harris, "Effect of Bulk Recombination Current on the Current Gain of GaAs/AIGaAs Heterojunction Bipolar Transistors in GaAs-on-Si," IEEE Electron Dev. Lett. 10, (10), pp. 458-460, October 1989. 

 

171.   D. G. Schlom, J. N. Eckstein, I. Bozovic, A. F. Marshall, J. T. Sizemore, Z. J. Chen, K. E. Von Dessonneck, J. S. Harris, Jr. and J. C. Bravman, "Molecular Beam Epitaxy of Layered Bi-Sr-Ca-Cu-O Compounds" Proc. Material Research Society Symposium M: High-Temperature Superconductors, 169, pp. 711-714, November 1989.

 

172.   B. G. Park, E. Wolak, K. L. Lear and J. S. Harris, Jr., "Improved Vertically Integrated Resonant Tunneling Diodes," Proc. IEEE/IEDM Symposium, Washington, D. C.  pp. 563-566, December 1989.

 

173.   S. K. Diamond, E. Özbay, M. J. W. Rodwell, D. M. Bloom, Y. C. Pao, E. Wolak, and J. S. Harris, Jr., "Resonant Tunneling Diodes for Switching Applications", in OSA Proc. Picosecond Electronics and Optoelectronics 4, pp. 101-105.

 

174.   D. E. Munnix, D. Bimberg, D. E. Mars, J. N. Miller, E. C. Larkins, and J. S. Harris, Jr. "Optical Properties of One- and Two-Component Plasma in GaAs/AlGaAs n-Modulation Doped Heterostructures," Superlattices and Microstructures, 6, 4, pp. 369-372, 1989

 

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175.   P. Cheng and J. S. Harris, Jr., " Improved Design of AlAs/GaAs Resonant Tunneling Diodes", Proc.Quantum Well and Superlattice Physics III,  (1990), SPIE, 1283, pp. 353-358, March 1990.

 

176.   S. D. Kim, T. Ma, Z. Rek, and J. S. Harris, Jr., "Defect Structures in MBE Grown GaAs on Si," Proceedings of Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1990), Proc. SPIE, 1285, pp. 202-211, March 1990. 

 

177.   D. G. Schlom, J. N. Eckstein, I. Bozovic, Z. J. Chen, A. F. Marshall, K. E. von Dessonneck, J. S. Harris, Jr., "Molecular Beam Epitaxy-a Path to Novel High Tc Superconductors," Proc. Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1990), Proc. SPIE, 1285, pp. 234-247, March 1990.

 

178.   J. H. Kim, I. Bozovic, D. B. Mitzi and A. Kapitulnik and J. S. Harris, Jr., "Optical Anisotropy of Bi2Sr2CaCu208," Phys. Rev. B 41, (10), pp. 7251-7253, April 1990. 

 

179.   P. Cheng and J. S. Harris, Jr., "Improved Design of AlAs/GaAs Resonant Tunneling Diodes", Appl. Phys. Lett. 56, (17) pp. 1676-1678, April 1990.

 

180.   J. S. Harris, Jr., "From Bloch Functions to Quantum Wells", International J. Modern Physics B, 4, (6), pp. 1149-1179, May 1990.

 

181.   I. Bozovic, J. N. Eckstein, D. G. Schlom and J. S. Harris, Jr., "In-Situ Growth of Superconducting Single Crystal Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy", Proc. Science and Technology of Thin-Film Superconductors II, April/May 1990, Denver, CO.

 

182.   D. G. Schlom, A. F. Marshall, J. T. Sizemore, Z. J. Chen, J. N. Eckstein, I. Bozovic, K. E. von Dessonneck J. S. Harris, Jr., and J. C. Bravman "Molecular Beam Epitaxial Growth of Layered Bi-Sr-Ca-Cu-O Compounds," J. Cryst. Growth. 102, pp. 361-375, May 1990. 

 

183.   J. N. Eckstein, I. Bozovic, K. E. von Dessonneck, D. G. Schlom, and J. S. Harris, Jr., "Atomically Layered Heteroepitaxy of High Temperature Superconducting Thin Films: Metastable Phases and Superlattice Structures," Proc. ISTEC Workshop of Superconductivity, pp. 37-40, Kagoshima, Japan, May 1990.

 

184.   J. N. Eckstein, I. Bozovic, D. G. Schlom, Z. J. Chen and. J. S. Harris, Jr., "In-Situ Growth of Single Crystal Bi2Sr2CanCun+1Ox Thin Films by Atomically Layered Epitaxy", Proc. EMC Conference, University of California, Santa Barabara, June 1990.

 

185.   Y. C. Pao, C. Nishimoto, M.Riaziat, R. Majidi-Ahy, N. G. Bechtel, J. S. Harris, Jr., "Impact of Surface Layer on In0.52Al0.48As/In0.53Ga0.47As/InP High Electron Mobility Transistors", IEEE Electron Dev. Lttrs, 11, (7), pp. 315-313, July 1990.

 

186.   J. L. Rascol, K. P. Martin, R. E. Carnahan, and R. J. Higgins, L. Cury and J. C. Portal, B. G. Park, E. Wolak, K. L. Lear, and J. S. Harris, Jr. "Ballistic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes", Proc. NATO Advanced Study Institute on Granular Nanoelectronics, Ciocco, Italy, July 23-Aug 4, 1990.

 

187.   J. J. L. Rascol, K. P. Martin, R. E. Carnahan, and R. J. Higgins, L. Cury and J. C.Portal, B. G. Park, E. Wolak, K. L. Lear, and J. S. Harris, Jr. "Ballistic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes", Proc. 5th Int. Conf. on Superlattices and Microstructures, Berlin, 13-19 Aug. 1990.

 

188.   W. Liu, D. Costa, J. S. Harris, Jr., "Novel Doubly Self-Aligned AlGaAs/GaAs HBT" Electron. Lett. 26, (17), pp. 1361-1362, August 1990

 

189.   J. S. Harris, Jr., "From Bloch Functions to Quantum Wells", Conductivity and Magnetism, The Legacy of Felix Bloch, ed. William A. Little (World Scientific, Singapore, 1990) pp. 23-53

 

190.   Y. C. Pao, N. Gabrial, D. Liu, J. S. Harris, L. Parechanian, E. R. Webber, “Device and material characterization of molecular-beam epitaxial (110) GaAa/AlGaAs,” J. Electron. Mat. 16 (4), pp. A16, (1987)

 

191.   J. N. Eckstein, I Bozovic and K. E. von Dessonneck D. G. Schlom, J. S. Harris, Jr., and S. M. Baumann, "Atomically Layered Heteroepitaxial Growth of Single-Crystal Films of Superconducting Bi2Sr2Ca2Cu3Ox," Appl. Phys. Lett. 57, pp. 931-933, August 1990. 

 

192.   D. G. Hill, K. L. Lear, and J. S. Harris, Jr. "Two Selective Etching Solutions for GaAs on InGaAs and GaAs/AlGaAs on InGaAs", J. Electrochem. Soc. 137, (9), pp. 2913-2914, September 1990. 

 

193.   K. Kojima, D. G. Schlom, K. Kuroda, M. Tanioku, K. Hamanaka, J. N. Eckstein and J. S. Harris, Jr., "Superstructure in Thin Films of Bi-Based Compounds on MgO", J. J. Appl. Phys, 9, pp. L1638-L1641, September 1990.

 

194.   D. Costa, W. Liu, and J. S. Harris, Jr., "A new Direct Method for Determining the Heterojunction Bipolar Transistor Equivalent Circuit Model," Proc. IEEE Bipolar Circuits and Tech. Meeting, 5.6, pp. 118-1121, September 1990.

 

195.   J. N. Eckstein, I Bozovic and K. E. von Dessonneck D. G. Schlom, J. S. Harris, Jr., and S. M. Baumann, "Growth of untwinned Bi2Sr2Ca2Cu3Ox Thin Films by Atomically Layered Epitaxy," Appl. Phys. Lett. 57, pp. 1049-1051, September 1990. 

 

196.   B. Pezeshki, D. Thomas, and J. S. Harris, Jr., "Optimization of Modulation Ratio and Insertion Loss in Reflective Electroabsorption Modulators", Appl. Phys. Lett. 57, (15), pp. 1491-1492, October 1990. 

 

197.   B. Pezeshki, D. Thomas, and J. S. Harris, Jr., "Optimization of Reflection Electro-Absorption Modulators", Proceedings of Physical Concepts of Materials for Novel Optoelectronics Device Applications II: Device Physics and Applications, (1990), SPIE 1362, pp. 559-563, October 1990. 

 

198.   J. S. Harris, Jr., and M. M. Fejer "Quantum Wells and Artificially Structured Materials for Non-Linear Optics," Proceedings of Physical Concepts of Materials for Novel Optoelectronics Device Applications II:  Device Physics and Applications, (1990) SPIE 1361, pp. 262-273,  October 1990. 

 

199.   Y. C. Pao, C. K. Nishimoto, R. Majidi-Ahy, J. Archer, N. G. Bechtel, J. S. Harris, Jr., "Characterization of Surface-Undoped In0.52Al0.48As/In0.53Ga0.47As/InP High Electron Mobility Transistors", IEEE Tran. Electron. Dev., 37, (10), pp. 2165-2170, October 1990.

 

200.   D. G. Hill, W. S. Lee, T. Ma, and J. S. Harris, Jr., "Uniform, High-Gain AlGaAs/In0.05Ga0.95As/GaAs P-n-p Heterojunction Bipolar Transistors by Dual Selective Etch Process," IEEE Electron Device Lett. 11, pp. 425-427, 1990. 

 

201.   D. G. Schlom, A. F. Marshall, J. S. Harris, Jr., I. Bozovic, J. N. Eckstein, "Growth of Metastable Phases and Superlattice Structures of Bi-Sr-Ca-Cu-O Compounds by an Atomic Layering MBE Technique", Proc. 3rd International Symposium on Superconductivity, Sendai, Japan, Nov. 1990.

 

202.   B. Pezeshki, D. Thomas and J. S. Harris, Jr., "Large Reflectivity Modulation Using InGaAs-GaAs," IEEE Photon. Techn. Lett. 2, pp. 807-809, November 1990.

 

203.   J. J. L. Rascol, K. P. Martin, R. E. Carnahan, and R. J. Higgins, L. Cury, J. C. Portal, B. G. Park, E. Wolak, K. L. Lear and J. S. Harris, Jr., "Influence of Ballastic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes", Superlattices and Microstructures 7 (2) pp. 147 - 150

 

204.   J. J. L. Rascol, K. P. Martin. R. E. Carnahan R. J. Higgins, L. Cury, J. C. Portal, B.G. Park, E. Wolak, K. L. Lear and J. S. Harris, Jr., " Influence of Ballistic Electrons on the Device Characteristics of Vertically Integrated Resonant Tunneling Diodes", Appl. Phys. Lett, 58 (14) pp. 1482 - 1484 1990. 

 

205.   D. R. Allee, S. Y. Chou, J. S. Harris, Jr. and R. F. W. Pease, " Resonant Tunneling of 1-Dimensional Electrons Across an Array of 3-Dimensionally Confined Potential Wells," Superlattices and Microstructures 7, (2), pp. 131-134, 1990.

 

206.   B. Pezeshki, D. Thomas and J. S. Harris, Jr., "Wannier-Stark Localization in a Strained InGaAs/GaAs Superlattice", Appl. Phys. Lett. 57, (20), pp. 2116-2117, November, 1990. 

 

207.   J. W. Adkisson, J. S. Harris, T. George and E. R. Weber, "77K Photoluminescence Investigation of Residual Stress in MBE-Grown GaAs/Si Layers," Proc. Electronic, Optical  and Device Properties of Layered Structures, MRS Meeting, pp. 229-323, November 1990.

 

208.   W. Liu, D. G. Hill, and J. S. Harris, Jr., "A High Frequency Pnp AlGaAs/InGaAs Heterojunction Bipolar Transistor with an Ultrathin Strained Base", Electron. Lett. 26, pp. 2000-2002, November 1990. 

 

209.   W. Liu, D. Hill, D. Costa, J. S. Harris, Jr., "Comparison of Pnp AlGaAs/GaAs Heterojunction Bipolar Transistor with and Without Base Quasielectric Field, Proc.IEEE IEDM (1990), pp. 669-672, San Francisco, CA, December 1990

 

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210.   Y. C. Pao, and J. S. Harris, Jr., "Molecular Beam Epitaxial Growth and Structural Design In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs ", J. Crystal. Growth, 111, pp. 489-494, 1991. 

 

211.   J. H. Kim, I. Bozovic, J. S. Harris, Jr., W. Y. Lee, C. B. Eom, and T. H. Geballe,"Plasmons in High -Tc Cuprate Superconductors,"  Proc. University of Miami Workshop Electronic Structure and Mechanisms for High Temperature Superconductivity, pp. 251-254. (January 3-9, 1991), edited by J. Ashkenazy and G. Vezzol, Plenum Press.

 

212.   I. Bozovic, J. H. Kim, J. S. Harris, Jr., and W. Y. Lee, "Optical Study of Plasmons in Tl2Ba2Ca2Cu3O10," Phys. Rev. B, 43, pp. 1169-1172, January 1991.

 

213.   T. B. Boykin, J. P. A. van der Wagt, and James S. Harris, Jr., "A Tight Binding Model for GaAs/AlAs Resonant Tunnel Diodes," Phys. Rev. B, 43, pp.4777-4784, February 1991.

 

214.   B. Pezeshki, D. Thomas, and J. S. Harris, Jr., "Novel Cavity Design for High Reflectivity Changes in a Normally Off Electroabsorption Modulator," Appl. Phys. Lett. 58, pp. 813-815, February 1991. 

 

215.   W. Liu, D. Costa, and J. S. Harris, Jr., "Theoretical Comparison of Base Bulk Recombination Current and Surface Recombination Current of a MESA AlGAAs/GaAs Heterojunction Bipolar Transistor", Solid State Electronics, 34, pp. 1119-1123, 1991.

 

216.   W. S. Lee, G. W. Yoffee, D. G. Schlom and J. S. Harris, Jr., "Accurate Measurement of MBE Temperature," J. Crystal Growth 111, 131 (1991)

 

217.   J. H. Kim, I. Bozovic, C. B. Eom and T. H. Geballe, "Study of Optical Plasmons InLa1.85Sr0.15Cu2O4", Physica C, 174, pp. 435-439 (1991).

 

218.   B. Pezeshki, R. Apte, S. M. Lord, and J. S. Harris, Jr., "Dynamic Optical Grating for Laser Beam Steering Applications", OSA Proc. Photonic Switching, Salt Lake City, UT, March 1991

 

219.   D. Thomas, B. Pezeshki, and J. S. Harris, Jr., "Reflection Electro-Absorption Modulator with High Reflectivity Change in a Novel Normally-Off Configuration", Proc. Quantum Optoelectronics, pp. 30-33, Salt Lake City, UT, March 1991.

 

220.   W. S. Fu, G. E. Poirier, R. P. Bryan, J. F. Klem, and G. R. Olbright, A. Paul, R. Binder, S.W. Koch and J. S. Harris, "Femtosecond Gain Dynamics in Semiconductors", Proc. Quantum Optoelectronics 1991, pp. 3345-3350, Salt Lake City, UT, March 1991.

 

221.   E. Wolak, E. Ozbay, B. G. Park, S. K. Diamond, D. M. Bloom and J. S. Harris, Jr., "The Design of GaAs Resonant Tunneling Diodes with Peak Current Densities over 2x105 a cm-2", J. Appl Phys., 69, pp. 3345-3350 March 1991.

 

222.   S. J. B. Yoo, M. M. Fejer, and R. L. Byer, and J. S. Harris, Jr., "Second-Order Susceptibility in Asymmetric Quantum Wells and its Control by Proton Bombardment", Appl. Phys. Lett. 58, pp. 1724-1726, April 1991.

 

223.   W. S. Lee, G. W. Yoffee, D. G. Schlom and J. S. Harris, Jr., "Accurate Measurement of MBE Substrate Temperature", J. Crystal Growth, 111, pp. 131-135, 1991.

 

224.   Y. C. Pao and J. S. Harris, Jr., "Physical Origin of the High Output Conductance in In0.52Al0.48As/In0.53Ga0.47As/InP HEMTs", Proc. Third International Conference, Indium Phosphide and Related Materials, Cardiff, Wales, April 1991, pp. 344 - 348

 

225.   J. H. Kim, A. Kapitulnik, J. S. Harris, Jr., K. Char, I. Bozovic, W. Y. Lee, "Preparation of Optically Smooth Surfaces of High-Tc Superconducting Films," Proc. Spring MRS Meeting, Anaheim, pp. 159-163 April/May 1991. 

 

226.   G. R. Olbright, W. S. Fu, G. E. Poirer, R. P. Bryan, J. F. Klem, A. Paol R. Binder, S. W. Koch and J. S. Harris, Jr., "Femtosecond-gain Spectroscopy of GaAs", Proc. Quantum Electronics Laser Science 1991, Baltimore, May 1991.

 

227.   J. H. Kim, K. Char, I. Bozovic, W. Y. Lee, A. Kapitulnik and J. S. Harris, Jr., "Enhancement of Optical Reflectivity of High-Tc Superconducting Films by Ion Milling", Appl. Phys. Letts., 58 pp. 2558-2560, June 1991.

 

228.   D. Costa, W. Liu, and J. S. Harris, Jr., "Reduction of Low-Frequency Noise In Npn AlGaAs/GaAs HBTs", Proc. DRC Conference, University of Colorado Boulder, June 1991. 

 

229.   G. Roos, N. M. Johnson, C. Herring and J. S. Harris, "Thermal Dissociation Energy of the Si-H Complex in n-type GaAs", Appl. Phys. Lett. 59, pp. 461-463, July 1991.

 

230.   B. Pezeshki, S. M. Lord and J. S. Harris, Jr., "Electroabsorptive Modulators in InGaAs/AlGaAs", Appl Phys. Lett. 59 pp. 888-890, August 1991. 

 

231.   W. Liu, D. Costa, and J. S. Harris, Jr., "Comparison of the Effects of Surface Passivation and Base Quasi-Electric Fields on the Current Gain of AlGaAs/GaAs Heterojunction Bipolar Transistors Grown on GaAs and Si Substrates", Appl Phys. Lett., 59, pp. 691-693, August 1991.

 

232.   N. Yamada, G. Roos and J. S. Harris, Jr., "Threshold Reduction in Strained InGaAs Single Quantum Well Lasers by Rapid Thermal Annealing", Appl Phys. Lett., 59, pp. 1040-1042, August 1991.

 

233.   S. Y. Chou, D. R. Allee, R. F. Pease and J. S. Harris, Jr., “Lateral Resonant Tunneling Transistors Employing Field-Induced Quantum Wells and Barriers,” Proc. IEEE, 79, pp. 1131-1139, August 1991.

 

234.   K. Matsumoto, M. Ishii, H. Morozumi, S. Imai, K. Sakamoto, Y. Hayashi, W. Liu, D. Costa, T. Ma, A. Massengale, J. Harris, “Accumulation mode GaAlAs/GaAs bipolar transistor”, Proc. Conf. Solid State Devices and Materials, SSDM, Yokohama, Japan, pp. 362-364, August 27-19 1991 

 

235.   B. Pezeshki, R. B. Apte. S. M. Lord, and J. S. Harris, "Quantum Well Modulators for Optical Beam Steering Applications", IEEE Phot. Tech. Lett. 3, pp.790-792, September 1991. 

 

236.   K. Matsumoto, M. Ishii, H. Morozumi, S. Imai, K. Sakamoto, Y. Hayashi, W. Liu, D. Costa, T. Ma, A. Massengale, J. Harris, “Accumulation mode GaAlAs/GaAs bipolar transistor with two dimensional hole gas base”, Proc. 18th International Symposium on GaAs and Related Compounds, September 1991, Seattle, WA, pp. 299-304

 

237.   D. Costa and J. S. Harris, "Low-Frequency Noise Characterization of Npn AlGaAs/GaAs Heterojunction Bipolar Transistors", Proc. 18th International Symposium on GaAs and Related Compounds, September 1991, Seattle, WA, pp. 323-328.

 

238.   B. Pezeshki, S. M. Lord, J. S. Harris, Jr., "Electro-Absorption in InGaAs/AlGaAs Quantum Wells", Proc. 18th International Symposium on GaAs and Related Compounds, pp. 323-328, September 1991, Seattle, WA.

 

239.   K. Matsumoto, M. Ishii, H. Morozumi, S. Imai, K. Sakamoto, Y. Hayashi, W. Liu, D. Costa, T. Ma, A. Massengale, and J. S. Harris, "Accumulation Mode GaAlAs/GaAs Bipolar Transistor with Two Dimensional Hole Gas Base", Proc. 18th International Symposium on GaAs and Related Compounds, pp. 299-304, September 1991, Seattle WA.

 

240.   D. Costa, W. Liu, and J. S. Harris, Jr., "Direct Extraction of the AlGaAs/GaAs Heterojunction Bipolar Transistor Small-Signal Equivalent Circuit", IEEE Transactions on Electron Dev., 38, pp. 2018-2024, September 1991.

 

241.   J. P. A. van der Wagt, K. L. Bacher, G. S. Solomon, and J.S. Harris, Jr., "Geometrical Growth Rate Nonuniformity Effects on RHEED Signal Intensity Decay", Proc. Of NAMBF, pp. 825-828, Austin, TX, September 1991.

 

242.   R. Lodenkamper, M. M. Fejer, and J. S. Harris, Jr., "Surface Emitting Second Harmonic Generation in Vertical Resonator", Elect. Ltts., 27, pp. 1882-1884. September 1991.

 

243.   B. Pezeshki, S. M. Lord, T. B. Boykin, B. L. Shoop, and J. S. Harris, Jr., "AlGaAs/AlAs QW Modulator for 6328Ā Operation", Elect. Letts., 27, pp. 1971-1973, October 1991. 

 

244.   K. Yamamoto, R. H. Hammond and J. S. Harris, Jr., "The Relative Effect on the Oxygen Concentration in YBa2Cu3O7-d of Atomic and Ionic Oxygen Fluxes, Produced by a Small Compact Electron Cyclotron Resonance Source", J. Vac. Sci. Technol., A9, pp. 2587-2593, Sept/Oct 1991.

 

245.   B. G. Park, E. Wolak and J. S. Harris, Jr., "Effect of High Current Density and Doping Concentration on the Characteristics of GaAs/AlAs Vertically Integrated Resonant Tunneling Diodes", J. Appl. Phys. 70 (11) pp. 7141 - 7148, December 1991.

 

246.   J. J. L Rascol, K. P. Martin, R. E. Carnahan, and R. J. Higgins, L. Cury, C. Portal, B. G. Park, W. Wolak, K. L. Lear and J. S. Harris, Jr., "Ballistic Electron Contributions in Vertically Integrated Resonant Tunneling Diodes", Superlattices & Microstructures, 10, pp. 175-178, 1991.

 

247.   G. G. Zhou, A. Fischer-Colbrie, J. Miller, Y. C. Pao, B. Hughes, L. Studebaker and J. S. Harris, Jr., "High Output Conductance of InAlAs/InGaAs/InP MODFET due to Weak Impact Ionization in the InGaAs Channel", IEDM Technical Digest, December 1991.  pp. 247 - 250

 

248.   J. H. Kim, I. Bozovic, J. S. Harris, Jr., W. Y. Lee, C. B. Eom, T. H. Geballe and E. S. Hellman, "Plasmons in High-Temperature Superconductors", Physica C, 185, pp. 1019-1020, 1991.

 

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249.   B. L. Shoop, B. Pezeshki, J. W. Goodman and J. S. Harris, Jr., "Noninterferometric Optical Subtraction using Reflection-Electroabsorption Modulators," Optics Letters, 17, pp.58-60, January 1992.

 

250.   S. Takigawa, K. Bacher, L. B. Aronson, and J. S. Harris, Jr., "Low Threshold Current Grating-Coupled Surface-Emitting Strained-InGaAs Single Quantum Well Laser with GaAs Optical Confinement Structure", Appl. Phys. Lett., 60, pp. 265-267, January 1992. 

 

251.   B. L. Shoop, B. Pezeshki, J. W. Goodman, and J. S. Harris, Jr., "Laser-Power Stabilization Using a Quantum-Well Modulator," IEEE Photonics Tech. Lett., 4 pp. 136 - 139,  February 1992.

 

252.   W. Liu, "Ideality Factor of Extrinsic Base Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transistors," Elect. Lett. 28 pp. 379-380, February 1992.

 

253.   B. Pezeshki, G. A. Williams, and J. S. Harris, Jr. "Optical Phase Modulator Utilizing Electroabsorption in a Fabry-Perot Cavity," Appl. Phys. Lett. 60, pp. 1061-1063, March 1992.

 

254.   G. N. Nasserbakht, J. W. Adkisson, B. A. Wooley, J. S. Harris, Jr., T. I. Kamins, and S. S. Wong, "Monolithic Integration GaAs and Si Bipolar Devices for Optical Interconnect Systems", Proc. IEEE International Solid State Circits Conference, San Francisco, 1992, pp. 23.1.1 - 23.1.4

 

255.   W. Liu, and J. S. Harris, "Dependence of the Base Crowding Effect on Base Doping and Thickness for Npn AlGaAs/GaAs HBTs", Elect. Lett. 27 (22) pp. 2048-2050, 1992.

 

256.   J. P. A. van der Wagt, K. L. Bacher, G. S. Solomon and J. S. Harris, Jr.,  "Geometrical Growth Rate Nonuniformity Effects on Reflection High-Energy Electron Diffraction Signal Intensity Decay," J. Vac. Sci. Technol. B, pp. 825-828, Mar/Apr 1992.

 

257.   W. Liu, C. Dai and J. S. Harris, Jr.,  "An Advantage of Pnp over Npn AlGaAs/GaAs Heterojunction Bipolar Transistors for Microwave Power Applications," Jpn. J. Appl. Phys., 31, pp. L452-L454, April 1992.

 

258.   S. M. Lord, G. Roos, B. Pezeshki and J. S. Harris, Jr., "Hydrogen Passivation of Defects in InGaAs/AlxGa1-xAs Quantum Wells," Proc. MRS Spring Meeting, 262, pp. 881-886, April/May 1992.

 

259.   N. Yamada and J. S. Harris, “Strained InGaAs/GaAs single quantum well lasers with saturable absorbers fabricated by quantum well intermixing”, Appl. Phys. Lett. 60 (20), pp. 2463-65, May 1992

 

260.   W. Liu, C. Dai and J. S. Harris, Jr. “Contact Impedance in Heterojunction Bipolar Transistors", Solid State Elect. 35, pp. 547-552, 1992. 

 

261.   W. Liu, D. Costa and J. S. Harris, Jr., "Derivation of the Emitter-Collector Transit Time of Heterojunction Bipolar Transistors", Solid State Elect. 35, pp 541-545, 1992.

 

262.   S. M. Lord, G. Roos, B. Pezeshki, J. S. Harris, Jr., and N. M. Johnson, "Enhancement of Photoluminescence Intensity in InGaAs/Al(x)Ga(1-x)As Quantum Wells by Hydrogenation," Appl. Phys. Lett. 60, pp. 2276-2278, May 1992 

 

263.   H. Ito, O. Nakajima, T. Furuta, and J. S. Harris, Jr., "Influence of Dislocations on the DC Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors," IEEE Elect. Dev. Lett. 13, pp. 232-234, May 1992 

 

264.   H. Ito and J. S. Harris, Jr., “InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substratee,” Electronics Letters 28, (7) pp.  655-656, March 1992.

 

265.   N. Yamada and J. S. Harris, Jr., "Strained InGaAs/GaAs Single Quantum Well Lasers with Saturable Absorbers Fabricated by Quantum Well Intermixing," Appl. Phys. Lett. 60, pp. 2463-2465, May 1992.

 

266.   B. Pezeshki, S. M. Lord, T. B. Boykin and J. S. Harris, Jr., "GaAs/AlAs Quantum Wells for Electroabsorption Modulators," Appl. Phys. Lett. 60, pp. 2779-2781. June 1992 

 

267.   W. Liu, J. S. Harris, Jr., "Effects of Replacing a Portion of the AlGaAs Base-Emitter Junction of Heterojunction Bipolar Transistors by GaAs," Int. Jrnl. Elect. 72, pp. 401-408, 1992 

 

268.   B. Pezeshki, D. Liu, S. M. Lord and J. S. Harris, Jr. "Visible Wavelength Fabry-Perot Reflection Modulator Using Indirect-Gap AlGaAs/As," Elect. Lett, 28, pp.1170-1171, June 1992.

 

269.   S. D. Kim and J. S. Harris, Jr., "Stacking Fault Stability in GaAs/Si Hetero-Epitaxial Growth," Crystal Growth, 123, pp. 439-444, June 1992.

 

270.   I. Bozovic, J. H. Kim and J. S. Harris, E. S. Hellman, E. H. Hartford and P. K. Chan, "Free Chare-Carrier Plasmons in Ba1-x KxBi03: A Close Relation to Cuprate Superconductors," Phys. Rev. B, 46 pp. 1182-1187, June 1992.

 

271.   W. Liu and J. S. Harris, "Mesa Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transistors with an Emitter-Base-Emitter Structure," J. Vac. Sci. Technol. B, pp. 1285-1290, Jul/Aug 1992. 

 

272.   T. B. Boykin and J. S. Harris, Jr., "X-Valley Tunneling in Single AlAs Barriers," J. Appl. Phys. 72, pp. 988-992, August 1992.

 

273.   W. Liu and D. Hill D. Costa and J. S. Harris, Jr., "High-Performance Microwave AlGaAs-InGaAs Pnp HBT with High-DC Current Gain," IEEE Microwave & Guided Wave Letts. 2, pp. 331-333, August 1992.

 

274.   W. Liu and J. S. Harris, "Effects of Emitter-Base Contact Spacing on the Current Gain in Heterojunction Bipolar Transisitors," Jpn. J. Appl. Phy. 31, pp 2349-2351, August 1992. 

 

275.   K. Bacher, B. Pezeshki, S. M. Lord and J. S. Harris, Jr., "Molecular Beam Epitaxy Growth of Vertical Cavity Optical Devices with In-Situ Corrections," Appl. Phy. Lett. 61 pp. 1387-1889, September 1992.

 

276.   W. Liu, and S. D. Kim, "A High-Gain AlGaAs/GaAs Heterojunction Bipolar Transistor Grown on Silicon Substrate," Jpn. J. Appl. Phys. 31, pp. 2656-2659, September 1992. 

 

277.   W. S. Fu, J. S. Harris, Jr., R. Binder, S. W. Koch, J. F. Klem and G. R. Olbright, "Nonlinear Optical Properties and Ultrafast Response of GaAs/AlAs Type-II Quantum Wells," IEEE JQE, 28, pp. 2404-2415, October 1992.

 

278.   G. Roos, N.M. Johnson, Y.C. Pao, J. S. Harris, Jr and C. Herring, "Hydrogen Passivation of Si and Be Dopants in InAlAs," Mat. Res. Soc. Symp. Proc. 240, pp. 667-672, 1992. 

 

279.   W. Liu and J. S. Harris, Jr., "Parastic Conduction Current in the Passivation Ledge of AlGaAs/GaAs Heterojunction Bipolar Transistors," Solid State Elect. 35, pp. 891-895, 1992.

 

280.   Y. C. Pao and J. S. Harris, Jr., “Low-Conductance Drain (LCD) Design of InAlAs/InGaAs/InP HEMT’s,” IEEE Electron Dev. Lett. 13, pp. 535-537, 1992. 

 

281.   W. Liu and J. S. Harris, Jr., "Current Dependence of Base-Collector Capacitance of Bipolar Transistors," Solid State Elect. 35, pp. 1051-1057, 1992.

 

282.   S. M. Lord, B. Pezeshki and J. S. Harris, Jr., "Investigation of High In Content InGaAs Quantum Wells Grown on GaAs by Molecular Beam Epitaxy," Elect. Lett. 28, pp. 1193-1195, 1992. 

 

283.   T. B. Boykin, B. Pezeshki and J. S. Harris, Jr., "Anti-Resonances in the Transmission of a Simple Two-State Model," Phys. Rev. B, 46 (19) pp. 12769-12772, 1992.

 

284.   S. M. Lord, B. Pezeshki, S. D. Kim and J. S. Harris, "1.3 Ķm Exciton Resonances in InGaAs Quantum Wells Grown by Molecular Beam Epitaxy Using a Slowly Graded Buffer Layer," J. Crystal Growth. pp. 759-764, 1992.

 

285.   W. S. Fu, G. R. Olbright, J. F. Klem and J. S. Harris, Jr., "Optical Gain and Ultrafast Nonlinear Response in GaAs/AlAs Type-II Quantum Wells," Appl. Phys. Lett. 14 pp. 1661-1663, October 1992. 

 

286.   S. Takigawa, K. Bacher, L. B. Aronson and J. S. Harris, Jr., "Design and Performance of a Low-Threshold-Current Grating-Coupled Surface-Emitting Laser," Solid State Elect. 35, pp. 1241-1245, 1992. 

 

287.   D. Costa and J. S. Harris, Jr., "Low-Frequency Noise Properties of N-p-n AlGaAs/GaAs Heterojunction Bipolar Transistors," IEEE Trans. Elect. Dev. 39, pp. 2383-2394, October 1992. 

 

288.   W. Liu, D. Costa and J. S. Harris, Jr., "Current Gain of Graded AlGaAs/GaAs Heterojunction Bipolar Transistors With and Without a Base Quasi-Electric Field," IEEE Tran. Elect. Dev. 39, pp. 2422-2429, November 1992

 

289.   S. M. Lord, B. Pezeshki, A. F. Marshall, J. S. Harris, Jr., R. Fernandez and A. Harwit, "Graded Buffer Layers for Molecular Beam Epitaxial Growth of High In Content InGaAs on GaAs for Optoelectronics," Proc. MRS Fall Meeting, 1992. pp. 221-225

 

290.   W. Liu and J. S. Harris, "Diode Ideality Factor for Surface Recombination Current in AlGaAs/GaAs Heterojunction Bipolar Transisitors," IEEE Trans. Elect. Dev. 39, pp. 2726-2732, December 1992. 

 

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291.   S. M. Lord, B. Pezeshki, S. D. Kim and J. S. Harris, Jr., “1.3 Ķm Exciton Resonances in InGaAs Quantum Wells Grown by Molecular Beam Epitaxy Using a Slowly Graded Buffer Layer,” Proc. Seventh International Conference on Molecular Beam Epitaxy, Schwabish Gmundt, Germany, pp. 759-764, 1993.

 

292.   G. S. Solomon, G. Roos and J. S. Harris, Jr., “The Effect of Si Doping on DX Centers in Al.26Ga.74As”, Proc. Seventh International Conference on Molecular Beam Epitaxy, Schwabish Gmundt, Germany, pp. 737-741, 1993.

 

293.   J. P. A van der Wagt and J. S. Harris, Jr., ”Simulation of RHEED Intensity Oscillations during MBE Growth,” Proc. Seventh International Conference on Molecular Beam Epitaxy, Schwabish Gmundt, Germany, pp. 1025-1029, 1993.

 

294.   S. M. Lord, G. Roos, J. S. Harris and N. M. Johnson, "Hydrogen Passivation of Nonradiative Defects in InGaAs/AlxGa1-xAs Quantum Wells," J. Appl. Phys. January 1993.

 

295.   W. Liu and J. S. Harris, “Critical Passivation Ledge Thickness in AlGaAs/GaAs Heterojunction Bipolar Transistors,” J. Vac. Sci. Technol. B 11, pp. 6-9 Jan/Feb 1993. 

 

296.   G. S. Solomon, G. Roos and J. S. Harris, Jr., “The Effect of Si Planar Doping on DX Centers in Al0.26Ga0.74As,” J. Crystal. Growth. 127, pp. 737-741, 1993. 

 

297.   J. P. A. van der Wagt and J. S. Harris, Jr., "Simulation of RHEED Intensity Oscillations During MBE Growth," J. Crystal. Growth. 127, pp. 1025-1029, 1993 

 

298.   D. Liu, B. Pezeshki, S. M. Lord and J. S. Harris, Jr., “Phase Characteristics of Reflection Electro-Absorption Modulators,” Appl. Phys. Letts. 62, pp. 2158-2160, May  1993.

 

299.   W. Liu and J. S. Harris, Jr., “Cut-off Frequency and D.C. Gain of Heterojunction Bipolar Transisitrs,” Int. J. Electronics 74, pp. 401-106, 1993.

 

300.   H. Ito and J. S. Harris, Jr. “Lattice Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates,” IEEE Trans. Ed, 1993.

 

301.   H. C. Chui, S. M. Lord, E. Martinet, M. M. Fejer and J. S. Harris, Jr., “Intersubband Transitions in High Indium Content InGaAs/AlGaAs Quantum Wells,” Appl. Phys. Lett. 63 (3) pp. 364-366, July 1993.

 

302.   J. A. Trezza, B. Pezeshki, M. C. Larson, S. M. Lord and J. S. Harris, Jr., “High Contrast Asymmetric Fabry-Perot,” Appl Phys. Lett. 74, pp.452-454, August 1993.

 

303.   S. M. Lord, J. A. Trezza, M. C. Larson, B. Pezeshki, and J. S. Harris, Jr., “1.3Ķm Electroabsorption Reflection Modulators on GaAs,” Appl. Phys. Lett. 63 pp. 806-808, August 1993. 

 

304.   J. A. Trezza, M. C. Larson, S. M. Lord and J. S. Harris, Jr., “Large, Low-Voltage Absorption Changes and Absorption Bistability in GaAs/AlGaAs/InGaAs Asymmetric Quantum Wells,” J. Appl. Phys. 74, pp. 1972-1978, August 1993. 

 

305.   J. A. Trezza, M. C. Larson, S. M. Lord and J. S. Harris, “Low Voltage, Low Chirp, Absorptively Bistable Transmission Modulators Using Type IIA and Type IIB In0.3Ga0.7As/Al0.33Ga0.67As/In0.15Ga0.85As Asymmetric Coupled Quantum Wells,” J. Appl. Phys. 74 (11) pp. 6495-6502, December, 1993. 

 

306.   S. M. Lord, B. Pezeshki, A. F. Marshall, J. S. Harris, Jr., R. Fernandez and A. Harwit, “Graded Buffer Layers for Molecular Beam Epitaxial Growth of High In Content InGaAs On GaAs for Optoelectronics,” Mat. Res. Soc. Symp. Proc. 281, pp. 221-225, 1993. 

 

307.   J. A. Trezza, M. C. Larson, and J. S. Harris, Jr., “Zero Chirp Quantum Well Asymmetric Fabry-Perot Reflection Modulators Operating Beyond the Matching Condition,” J. Appl. Phys. 74(12), pp. 7061-7066, December 15, 1993 

 

308.   J. S. Trezza, B. Pezeshki, M. C. Larson, S. M. Lord and J. S. Harris, Jr., “High Contrast Reflection Electro-absorption Modulators with Zero Phase Change,” Appl. Phys. Lett. 63, pp. 452-454, 1993.

 

309.   H. Ito and J. S. Harris, Jr., “Lattice-Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates,” Jpn. J. Appl. Phys., 32 (1993), pp. 4923-4927, Part 1, No. 11A, November 1993.

 

310.   R. Lodenkamper, M. L. Bortz, M. M. Fejer, K. Bacher and J. S. Harris, Jr., “Surface-emitting Second-harmonic Generation in a Semiconductor Vertical Resonator,” Optics Lett., 18 (21), pp. 1798-1800, November 1, 1993. 

 

311.   S. M. Lord, B. Pezeshki, J. S. Harris, Jr., “Electroabsorption Modulators Operating at 1.3 Ķm on GaAs substrates,” Optical and Quantum Electronics, 25 (1993), pp. 5953-5964.

 

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312.   H. C. Chui, W. L. Martinet, M. M. Fejer, and J. S. Harris, Jr., “Short Wavelength Intersubband Transitions in InGaAs/AlGaAs quantum wells grown on GaAs, Appl. Phys. Lett. 64 (6), pp.736-8, February 1994.

 

313.   H. C. Chui and J. S. Harris, Jr., “Growth Studies on In0.5Ga0.5As / AlGaAs Quantum Wells Grown on GaAs with a Linearly Graded InGaAs Buffer,”J. Vac. Sci. Technol. B 12 (2), pp. 1019 - 1022, Mar/Apr 1994.

 

314.   H. C. Chui, E. L. Martinet, M. M. Fejer, and J. S. Harris, Jr., “Large Energy Intersubband Transitions in High Indium Content InGaAs/AlGaAs Quantum Wells,” NATO ASI: Quantum Well Intersubband Transition Physics and Devices, H.C. Liu, B.F. Levine, J.Y. Andersson, eds., Kluwer Academic Publishers, pp. 251-9 (1994)

 

315.   S. D. Kim, H. Lee, J. S. Harris, Jr., “MBE Growth of In0.65Ga0.35As Quantum Wells on GaAs Substrates for 1.5Ķm Exciton Resonance,” J. Crystal Growth 141 (1994), pp. 37 - 43

 

316.   M. V. Weckwerth, J. P. A. van der Wagt and J. S. Harris, Jr., “Observation of Quantum Mechanical Reflections of Electrons at an In-situ Grown GaAs / Aluminum Schottky Barrier,” J. Vac. Sci. Technol. B 12 (2), pp. 1303 - 5, Mar/Apr 1994.

 

317.   J. P. A. van der Wagt and J. S. Harris, Jr.,  “Reflection high-energy electron diffraction intensity oscillations during molecular beam epitaxy on rotating substrates,”J. Vac. Sci. Technol. B 12 (2), pp. 1236 - 8, Mar/Apr 1994.

 

318.   R. E. Carnahan, M. A. Maldonado, K. P. Martin, R. J. Higgins, J. P. A. Van der Wagt and J. S. Harris, Jr., “Observation of Resonant Tunneling Through Localized Continuum States in Electron Wave Interference Diodes,” Appl. Phys. Lett.  64 (18) pp. 2403 – 2405, May, 1994

 

319.   S. Schwyn Thöny, K. E. Youden, J. S. Harris Jr., L. Hesselink,  “Growth of Epitaxial Strontium Barium Niobate Thin Films by Pulsed Laser Deposition,” Appl. Phys. Lett.   65 (16) pp. 2018 – 2020, 1994. 

 

320.   J. A. Trezza, J. S. Harris, Jr., “Creation and Optimization of Vertical Cavity Phase Flip Modulators,” J. of Appl. Phys., 75 (10), pp. 4878-4884, May, 1994

 

321.   G. S. Solomon, D. Kirillov, H. C. Chui, and J. S. Harris, Jr., “Determination of AlAs mole fraction in Alx Ga1-xAs using Raman spectroscopy and x-ray diffraction” J. Vac. Sci. Technol. B 12 (2), pp. 1078-1081, Mar/Apr 1994

 

322.   D. J. Miller and James S. Harris, Jr., “50 nm GaAs/AlAs wire structures grown on corrugated GaAs,” J. Vac. Sci. Technol. B 12 (2), pp.1286 - 1289, Mar/Apr 1994

 

323.   G. G. Zhou, A. Fischer-Colbrie and J. S. Harris, Jr.,  “I-V Kink in InAIAs/InGaAs MODFETs due to Weak Impact Ionization Process in the InGaAs Channel,” Proc. of the 6th International Conference on InP and Related Materials, pp. 435-538, March 1994, Santa Barbara, CA.

 

324.   E. L. Martinet, B. J. Vartanian, G. L. Woods, H. C. Chui, J. S. Harris, Jr., and M. M. Fejer, “Applications of High Indium Content InGaAs/AlGaAs Quantum Wells in the 2-7Ķm Regime,” NATO ASI: Quantum Well Intersubband Transition Physics and Devices, H.C. Liu, B.F. Levine, J.Y. Andersson, eds. Kluwer Academic Publishers, pp. 261-273   1994.

 

325.   M. S. Brandt, J. W. Ager III, W. Götz, N. M. Johnson, J. S. Harris, Jr., R. J. Molnar and T. D. Moustakas, “Local vibrational modes in Mg-doped gallium nitride,” Phys. Rev. B  (49) pp.14758 - 14761, May, 1994.

 

326.   H. C. Chui, E. L. Martinet, G. L. Woods, M. M. Fejer, and J. S. Harris, Jr., “Doubly resonant second harmonic generation of 2.0 Ķm light in coupled InGaAs/AlAs Quantum Wells,” Appl. Phys. Lett. 64 (25) pp. 3365 - 3367, June 1994.

 

327.   B. J. Vartanian, J. S. Harris, Jr., “Normal-incidence intersubband hole absorption in In0.5Ga0.5As/Al0.45Ga0.55As quantum wells,” Quantum Well and Superlattice Physics V, G. H. Dohler, E. S. Koteles, Eds. Proc. SPIE  2139, pp. 27-36 (1994)

 

328.   E. L. Martinet, G. L. Woods, H. C. Chui, J. S. Harris, Jr., M. M. Fejer, C. A. Rella, B. A. Richman, “Free-electron laser nonlinear spectroscopy of doubly resonant (5.5-3.0 Ķm and 4.1-2.1 Ķm) InGaAs/AlGaAs asymmetric quantum wells,” Quantum Well and Superlattice Physics V, G. H. Dohler, E. S. Koteles, Eds., Proc. SPIE  2139, pp. 331-338, 1994.

 

329.   E. L. Martinet, H. C. Chui, G. L. Woods, M. M. Fejer, and J. S. Harris, Jr., C. A. Rella, B. A. Richman, H. A. Schwettman, “Short Wavelength (5.36 Ķm to 1.85 Ķm) Nonlinear Spectroscopy of Coupled InGaAs / AlAs Intersubband Quantum Wells,” Appl. Phys. Lett.   65 (21), pp. 2630-2632, Nov., 1994.

 

330.   I. Bozovic, J. H. Kim, J. S. Harris, Jr., C. B. Eom and Julia M. Phillips, J. T. Cheung, “Reflectance and Raman Spectra of Metallic Oxides, LaSrCoO and CaSrRuO: Resemblance to Superconducting Cuprates,” Phys. Rev. Lett. 73, pp. 1436 - 1439, September, 1994.

 

331.   J. Knall, L. T. Romano, D. K. Biegelsen, R. D. Bringans, H. C. Chui, J. S. Harris, Jr., D. W. Treat and D. P. Bour, “The use of graded InGaAs layers and patterned substrates to remove threading dislocations from GaAs on Si,” J. of Appl. Phys. 76 (5), pp. 2697 - 2702, September, 1994.

 

332.   C. M. Marcus, R. M. Clarke, I. H. Chan, C. I. Duruöz, J. S. Harris, Jr., “Phase-Breaking Rates from Conductance Fluctuations in a Quantum Dot,” Semicond - Sci. Technol. 9, pp. 1897 – 1901, 1994.

 

333.   H. Ito and J. S. Harris, Jr., “Influence of Dislocations on the Threshold Current Density of AlGaAs/GaAs/InGaAs Strained Quantum-Well Lasers,” Jpn. J. Appl. Phys. 33 pp. 6516 - 6517 Part 1, No. 12A, December 1994

 

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334.   J. A. Trezza and J. S. Harris, Jr., “Coupled Quantum Wells for Optical Modulation,” Confined Electron and Photon Systems, ed. E. Burnstein and C. Weisbuck (Plenum Press, 1995) pp.759 - 764

 

335.   H. C. Chui, G. L. Woods, M. M. Fejer, E. L. Martinet, and J. S. Harris, Jr., “Tunable Mid-Infrared Generation by Difference Frequency Mixing of Diode Laser Wavelengths in Intersubband InGaAs / AlAs Quantum Wells,” Appl. Phys. Lett. 66 (3) pp.  265 – 267, January, 1995.

 

336.   G. S. Solomon, J. A. Trezza and J. S. Harris, Jr., “Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs,” Appl. Phys. Lett.  66 (8) pp. 991 - 993, 20 February 1995

 

337.   L. E. Eng, K. Toh, C. J. Chang-Hasnain, K. Bacher and J. S. Harris, Jr., “Periodic Mode Shift in Vertical Cavities Grown by Molecular Beam Epitaxy,” Photonics Technol. Lett. 7 (3) pp. 235 - 237, March, 1995.

 

338.   L. E. Eng, K. Bacher, W. Yuen, M. Larson, G. Ding, J. S. Harris, Jr., and C. J. Chang-Hasnain, “Wavelength Shift in Vertical Cavity Laser Arrays on a Patterned Substrate,” Electr. Lett.,  31 pp. 562 - 563, March 30, 1995.

 

339.   J. W. Eldredge, K. M. Matney, M. S. Goorsky, H. C. Chui, J. S. Harris, Jr.,  “Effect of substrate miscut on the structural-properties of ingaas linear graded buffer layers grown by molecular-beam epitaxy on GaAs” J.  Vac. Sci. & Technol. B, 13 (2) pp. 689-691 March-Apr. 1995

 

340.   D.G. Schlom and J.S. Harris, Jr., "MBE Growth of High Tc Superconductors," in “Molecular Beam Epitaxy: Applications to Key Materials,” edited by R.F.C. Farrow (Noyes, Park Ridge, 1995), pp. 505-622

 

341.   Eric. C. Larkins and James. S. Harris, Jr., "MBE Growth of High-Quality GaAs and AlGaAs," in “Molecular Beam Epitaxy: Applications to Key Materials,” edited by R.F.C. Farrow (Noyes, Park Ridge, 1995), pp. 114-274

 

342.   M. Larson, B. Pezeshki and J. S. Harris, Jr.,  “Vertical Coupled-Cavity Microinterferometer on GaAs with deformable-membrane top mirror,” IEEE Photonics Technology Lett. 7 (4) pp.382 - 384 April, 1995.

 

343.   C. I Duröz, R. M. Clarke, C. M. Marcus, J. S. Harris, Jr., “Threshold, Switching, and Hysteresis in Quantum Dot Arrays,” Phys. Rev. Lett. 74 (16) pp. 3237-3240, April, 1995.

 

344.   S. D. Kim, H. J. Lee, J. S. Harris, Jr., “Interface Smoothing of High Indium Content InGaAs Layers on GaAs,” J. Electrochem. Soc., 142 (5) pp. 1667-1670, May, 1995. 

 

345.   L. E. Eng, K. Bacher, W. Yuen, J. S. Harris, Jr., C. J. Chang-Hasnain, “Multiple Wavelength Vertical Cavity Laser Arrays on Patterned Substrates,” IEEE J. of Select Topics in Quantum Electronics, 1 pp. 624 - 628 June, 1995.

 

346.   M. Yuri, J. S. Harris, Jr., T. Takayama, O. Imafuji, H. Naito, M. Kume, K. Itoh, T. Baba, “2-dimensional analysis of self-sustained pulsation for narrow-stripe AlGaAs lasers” IEEE J. Selected Topics Quantum Electronics, 1 (2) pp. 473-479 June 1995

 

347.   R. M. Clarke, I. H. Chan, C. M. Marcus, C. I. Duruöz, J. S. Harris, Jr., K. Campman, and A. C. Gossard, “Temperature Dependence of Phase Breaking in Ballistic Quantum Dots,” Phys. Rev. B  52 (4) pp. 2656-2659, July, 1995.

 

348.   S. D. Kim, J. A. Trezza, and J. S. Harris, Jr., “Observation of 1.5Ķm Quantum Confined Stark Effect in InGaAs/AlGaAs Multiple Quantum Wells on GaAs Substrates,” J. of Vac. Sci. Tech. B 13 (4) pp. 1526 - 1528, July, 1995.

 

349.   S. Schwyn-Thöny, K. E. Youden, J. S. Harris, Jr., L. Hesselink, “Growth and Characterization of Epitaxial Strontium Barium Niobate Thin Films Prepared by Pulsed Laser Deposition,” J. of Electronic Materials, 1995.

 

350.   D. B. Oberman, H. Lee, W. K. Götz, J. S. Harris, Jr., “Molecular beam epitaxy of gallium nitride by electron cyclotron resonance plasma and hydrogen azide,” J. Crystal Growth 150, pp. 912 – 915, 1995

 

351.   M. V. Weckwerth, C. Y. Hung, Y. C. Pao, J. S. Harris, Jr., “Epitaxial growth of thick pseudomorphic NiAl metal films on GaAs by migration enhanced epitaxy,” J. Crystal Growth 150, pp. 1150 – 1153, 1995.

 

352.   G. S. Solomon, J. A. Trezza, and J. S. Harris, Jr., “Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAs,” Appl. Phys. Lett.  66 (23) pp. 3161-3163, June 1995.

 

353.   K. Bacher and J. S. Harris, Jr., “A Wet Etching Technique for Accurate Etching of GaAs/AlAs Distributed Bragg Reflectors,” J. Electrochem. Soc., 142 (7), pp. 2386 – 2388, July 1995.

 

354.   M. C. Larson and J. S. Harris, Jr., “Broadly Tunable Resonant-cavity Light Emission,” Appl. Phys. Lett. 67 (5), pp. 590 - 592, July 1995.

 

355.   H. Lee, D. B. Oberman, and J. S. Harris, Jr., “Reactive ion etching of GaN using CHF3/Ar and C2ClF5/Ar plasmas,” Appl. Phys. Lett. 67 (12), pp. 1754 – 1756, September 1995.

 

356.   K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. J. Vartanian and J. S. Harris, Jr., “Room Temperature Operation of Single Electron Transistor made by STM Nano-Oxidation Process”, 1995 International Conference on Solid State Devices and Materials,  August 21 - 24, 1995, International House , Osaka, Japan  pp. 192 - 194.

 

357.   C. Y. Hung, M. V. Weckwerth, A. F. Marshall, Y. C. Pao and J. S. Harris, Jr., “Observation of Super-Structure in High-Quality Pseudomorpic Film of NiAl grown on GaAs”, J. of Crystal Growth, 169 (2) pp. 201-208 Nov. 1996

 

358.   B. Sung, H. C. Chui, E. L. Martinet and J. S. Harris, Jr., “Intersubband Transitions to the Above-Barrier States Controlled by Electron Bragg Mirrors”, 22nd International Symposium on Compound Semiconductors, August 28 - September 2, 1995, Cheju Island, Korea, pp. 1187-1192.

 

359.   G. S. Solomon, C. I. Duruöz, J. A. Trezza, R. M. Clarke, C. M. Marcus, and J. S. Harris, Jr. “Growth Induced and Patterned 0-Dimensional Quantum Structures”, in Low Dimensional Structures Prepared by Epitaxial Growth of Regrowth on Patterned Substrates, K. Eberl et al. (eds.) pp. 313 - 324,1995. 

 

360.   M. C. Larson and J. S. Harris, Jr., “Broadly -Tunable Resonant-Cavity Light-emitting Diode,” IEEE Photonics Technology Lett.  7 (11), pp. 1267 - 1269, November 1995.

 

361.   M. C. Larson, A. R. Massengale and J. S. Harris, Jr., “Continuously Tunable Micro-Electromechanical Vertical-cavity Surface-emitting Lasers,” Internl J. Optoelectronics, 1995, 10 (5), pp. 401 – 408 Sep-Oct 1995

 

362.   G. Y. Ding, S. W. Corzin, M. R. Tan and S. Y. Wang, “Mode

 

363.   g of Turn-on Jitter in Vertical Cavity Surface Emitting Lasers,” Elec. Lett., Dec., 1995.

 

364.   K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. J. Vartanian and J. S. Harris, Jr., “Comparison of Experimental and Theoretical Results of Room Temperature Operated Single Electron Transistor made by STM/AFM Nano - Oxidation Process”, Proc. IEEE IEDM, pp. 363-366, Dec. 11, 1995, Washington DC

 

365.   Y. Okada, J. S. Harris, Jr., A. Sutoh and M. Kawabe, “GaAs-on-Ge Heteroepitaxy by Atomic Hydrogen-Assisted Molecular Beam Epitaxy,” Proc. MRS 1995 Fall Meeting (Boston, Nov. 1995)

 

366.   L. A. Eyres, C. B. Ebert, H. C. Chui, J. S. Harris, Jr., and M. M. Fejer, “Fabrication of GaAs Orientation Template Substrates for Quasi-Phasematched Guided-Wave Nonlinear Optics”, Nonlinear Guided Waves and Their Applications, 6, 1995 OSA Technical Digest Series (Optical Society of America, Washington DC, 1995), pp. 156-158

 

367.   D. J. Bone, H. Lee, K. Williams, J. S. Harris, Jr., R. F. W. Pease, “Characterization of in-situ variable-energy focused ion beam/mbe mqw structures” Institute of Physics Conference Series 141, pp. 359-362 1995

 

368.    D. B. Oberman, H. Lee, W. K. Gotz, J. S. Harris, Jr., “MBE growth of gan with ECR plasma and hydrogen azide” Institute of Physics Conference Series, 141, pp. 131-136, 1995

 

369.   H. Lee, D.B. Oberman, W. Gotz, J. S. Harris, Jr., “Heteroepitaxial growth of GaN on GaAs by ECR plasma-assisted MBE” Institute of Physics Conference Series 141, pp. 125-130, 1995

 

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370.   J. A. Trezza, M. Morf, and J. S. Harris, Jr., “Creation and Optimization of Vertical Cavity X-Modulators,” IEEE J. Quant. Elect. 32 (1) pp. 53-60 January 1996.

 

371.   J. S. Powell, J. A. Trezza, M. Morf, and J. S. Harris, Jr., "Vertical Cavity X-Modulators for WDM," Photonics West 1996, San Jose, California, January 1996, pp. 207-216.

 

372.   M. C. Larson and J. S. Harris, Jr., “Wide and Continuous Wavelength Tuning in a Vertical Cavity Surface Emitting Laser Using a Micromachined Deformable Membrane Mirror,” Appl. Phys. Lett.  68 (7), pp. 891-893, Feb. 1996.

 

373.   M. C. Larson, A. R. Massengale, J. S. Harris, Jr., “Continuously-tunable micromachined vertical-cavity surface-emitting laser with 18 nm range,” Electr. Lett. 32 (4), pp. 330-332, Feb. 1996 

 

374.   Massengale, M. C. Larson, C. Dai, and J.S. Harris, Jr., “Collector-up AlGaAs/GaAs heterojunction bipolar transistors using oxidized AlAs for current confinement,” Electr. Lett.  32 (4), pp. 399-401, Feb. 1996. 

 

375.   I. Duruöz, R. M. Clarke, C. M. Marcus, J. S. Harris, Jr., “Switching and Hysteresis in Quantum Dot Arrays,” J. of Nanotechnology 7 (4), pp. 372 - 375, 1996

 

376.   L. E. Eng, K. Toh, C. J. Chang-Hasnain, K. Bacher and J. S. Harris, Jr., “Periodically Induced Mode Shift in Vertical Cavity Fabry Perot Etalons Grown by Molecular Beam Epitaxy,” Photon. Techn. Lett. 7 (3), pp. 235-237, March 1995.

 

377.   G. S. Solomon, J. A. Trezza, A. F. Marshall and J. S. Harris Jr., “Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs”, Phys. Rev. Lett.  76, (6), pp. 952 - 955, Feb. 1996

 

378.   K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. J. Vartanian and J. S. Harris, Jr., “Room Temperature Operation of Single Electron Transistor made by STM Nano-Oxidation Process for TiOx/Ti System” Appl. Phys. Lett. 68 (1) pp. 34-36 (1996).

 

379.   G. Pilling, D. H. Cobden, P. L. McEuen, C. I. Duruöz and J. S. Harris, Jr., “Intrinsic Bistability in Nonlinear Transport Through a Submicron Lateral Barrier”, Surface Science 362 (1-3) pp. 652-655 1996

 

380.   M. V. Weckwerth, J. S. Harris, Jr. and Y. C. Pao, “The Mechanical Properties of NiAl Grown on GaAs by Molecular Beam Epitaxy,” Proc. ECS Meeting, San Francisco, 1996

 

381.   Y. Okada and J. S. Harris, Jr., “Basic Analysis of Atomic-scale Growth Mechanisms for Molecular Beam Epitaxy of GaAs using atomic Hydrogen as a surfactant”, J. Vac.Sci. Technol. B 14 (3), pp. 1725 - 1728, May/Jun 1996

 

382.   H. Lee, M. Yuri, T. Ueda and J. S. Harris, Jr., “Thermodynamic Analysis and Growth Characterization of thick GaN films grown by Chloride VPE using GaCl3/N2 and NH3/N2”, Proc. MRS Spring Meeting in San Francisco, April 9, 1996,

 

383.   T. Ueda, M. Yuri, H. Lee, J. S. Harris, Jr. and T. Baba, “Photoluminescence Study of Chloride VPE-Grown GaN”, Mat. Res. Soc. Symp. Proc. 421 pp.189 - 193 MRS Spring Meeting in San Francisco, April 9, 1996

 

384.   M. Yuri, T. Ueda, H. Lee, K. Itoh, T. Baba, and J. S. Harris, Jr., “Vapor Phase Epitaxy of GaN Using Gallium Tri-Chloride and Ammonia”, Proc. MRS Spring Meeting in San Francisco, April 9, 1996,

 

385.   H. Lee, D. B. Oberman and J. S. Harris Jr., “Reactive Ion Etching of Gallium Nitride Films,” J. Electric Materials, 25 (5) pp. 835-837 May 1996.

 

386.   M. A. Cappelli, A. E. Kull, K. Schwendner, H. Lee, S. J. Harris, Jr. and J. Mroczkowski, “GaN Film Growth by a Supersonic Arcjet Plasma”, Proc. MRS Spring Meeting in San Francisco, April 9, 1996,

 

387.   E. Tuncel, D. B. Oberman, H. Lee, T. Ueda, J. S. Harris, Jr., “Optical Properties and Morphology of GaN Grown by MBE on Sapphire Substrates”, Proc. MRS Spring Meeting in San Francisco, April 9, 1996,

 

388.   T. F. Huang, E. Tuncel, J. S. Yeo and J. S. Harris, Jr., “Growth of Epitaxial GaN Films Using ZnO Buffer Layer by Pulsed Laser Deposition”, Proc. MRS Spring Meeting in San Francisco, April 9, 1996,

 

389.   B. N. Shimbo, S. Komarov, B. J. Vartanian, Y. Okada and J. S. Harris, Jr., “Atomic Force Microscope Chemically Induced Direct Processing”, Proc. MRS Spring Meeting in San Francisco, April 9, 1996.

 

390.   S. D. Kim, S. M. Lord, and J. S. Harris, Jr., “Strain Relaxation in Compositionally Graded Epitaxial Layers”, J. Vac. Sci. Techno. B 14 (2), pp. 642-646, Mar/Apr 1996 

 

391.   B. Sung, H. C. Chui, E. L. Martinet and J. S. Harris, Jr., “Control of Quasi-Bound States by Electron Bragg Mirrors in GaAs/Al0.3Ga0.7As Quantum Wells”, Appl. Phys. Lett. 68 (19), pp. 2720 - 2722, May 1996.

 

392.   K. L. Vodopyanov, V. Chazapis, C. C. Phillips, B. Sung and J. S. Harris, Jr., “Saturation Study of III-V Multi Quantum Well Bound-to-Bound and Bound-to-Quasibound Intersubband Transitions in the 3 - 10 Ķm Spectral Range”, Semicond. Sci. Techno. May 1996.

 

393.   Y. Hung, M. V. Weckwerth, M. R. Visokay, Y. C. Pao and J. S. Harris, Jr., “Growth of GaAs and InAlAs on High Quality, Epitaxial, NiAl Metal Film”, Proc.Spring MRS Conference , April 1996, San Francisco, CA

 

394.   K. Matsumoto, M. Ishii, J. Shirakashi, B. Vartanian, J. S. Harris, “Single electron devices with various structures made by STM/AFM nano-oxidation process”, Proc. Conf. Quantum Devices and Circuits, Alexandria, Egypt, 4-7 June 1996, pp. 196-203

 

395.   K. Matsumoto, M. Ishii, J-I. Shirakashi, B. J. Vartanian, J. S. Harris, Jr., “Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature made by STM/AFM Nano-Oxidation Process”, Proc. SSDM ‘96 August 1996, Yokohama, Japan, pp 433 - 435

 

396.   K. Matsumoto, M. Ishii, J-I Shirakashi, B. J. Vartanian, and J. S. Harris, Jr., “Size Dependence of Room Tempeature Operated Side Gate Single Electron Transistor with Multi-Islands Structure made by STM/AFM Nano-Oxidation Process”, Proc. IEEE IEDM, San Francisco, CA, Dec. 1996.

 

397.   D. Kirollov, H. Lee, and J. S. Harris, Jr., “Raman Scattering Study of GaN Films”, J. Appl. Phys. 80 (7), pp. 4058-4062, October 1996

 

398.   J. S. Harris, Jr. and K. Matsumoto “Fabrication of Novel Quantum Devices - Toward Room Temperature Operation of Single Electron Devices”, Proc. Taipei International Symposium on Recent Developments in New Technologies, Taipei, Taiwan, June, 1996, pp. 14

 

399.   B. Sung, G. L. Woods, C. W. Rella, H. A. Schwettman, M. M. Fejer and J. S. Harris, Jr. “Control of Quasi-Bound States by Electron Bragg Mirrors and electron Lifetime Measurements in GaAs/AlGaAs Quantum Wells”, Proc. LEOS Non-Linear Optics Meeting, Maui, Hawaii, July 1996

 

400.   J. S. Harris, Jr. “Broad-Range Continuous Wavelength Tuning in Microelectronmechanical Vertical Cavity Surface Emitting Lasers”, Proc. LEOS Workshop on Optical MEMS, Keystone, CO, August 1996

 

401.   J. A. Trezza and J. S. Harris, Jr., “Two-State Electrically Controllable Phase Diffraction Grating Using Arrays of Vertical-Cavity Phase Flip Modulators,” IEEE Photon. Techno. Lett. 8 (9), pp. 1211-1213, September 1996

 

402.   D. Kirillov, H. Lee, and J. S. Harris, Jr., “Raman Scattering Study of GaN Films”, J. Appl. Phys. 80 (7), pp. 4085 – 4062, October 1996.

 

403.   Y. Okada and J. S. Harris, Jr., “Deep Level Defects in GaAs on Si Substrates Grown by Atomic Hydrogen Assisted Molecular Beam Epitaxy”, J. Appl. Phys. 80 (8), pp. 4770-4772, October 1996

 

404.   J. S. Harris, Jr., “Application of Micro-Electro-Mechanical Systems to Optoelectronics,” Proc. IEDMS Conf., Hsinchu, Taiwan, Dec. 1996

 

405.   J. S. Harris, Jr., “Design of Quantum Well Intersubband Transitions for Non-linear Difference Frequency Mixing”, Technical Digest IEEE/LEOS: Nonlinear Optical Meeting, Maui, Hawaii, August, 1996.

 

406.   J. S. Harris, Jr, M. C. Larson, and A. R. Massengale, “Broad-Range Continuous Wavelength Tuning in Microelectromechanical Vertical-Cavity Surface-Emitting Lasers” Digest IEEE/LEOS 1996 Summer Topical Meetings, August 5-9, 1996

 

407.   G. S. Solomon, M. C. Larson, and J. S. Harris, Jr., “Electroluminescence in vertically aligned quantum dot multilayer light-emitting diodes fabricating by growth-induced islanding”, Appl. Phys. Lett., 69 (13), pp. 1897-1899 September1996

 

408.   J. S. Powell, J. A. Trezza, M. Morf, J. S. Harris, Jr., “Vertical-cavity X-modulators for WDM,” Proc. SPIE Int. Soc. Opt. Eng. 2690, pp. 207-211 (1996)

 

409.   M. C. Larson, J. S. Harris, Jr., “Micromachined tunable Fabry-Perot filters for wavelength division multiplexing,” Proc. SPIE Int. Soc. Opt. Eng. 2690, pp. 172-178 (1996)

 

410.   J. S. Powell, J. A. Trezza, M. Morf, and J. S. Harris, Jr., “Vertical Cavity X-Modulators for Reconfigurable Optical Interconnection and Routing”, International Conf. Massively Parallel Processing Using Optical Interconnections 1996, Maui, Hawaii, October 1996

 

411.   G. S. Solomon and J. A. Trezza, A. F. Marshall, and J. S. Harris, Jr, “Structural and Photoluminescence Properties of Growth-induced InAs Island Columns in GaAs”, J. Vac. Sci. Technol. B 14 (3), pp. 2208-2211, May/Jun 1996

 

412.   T. Ueda, M. Yuri, T-F Huang, S. Spruytte, H. Lee, K. Itoh, T. Baba and J. S. Harris, Jr., “Chloride VPE Growth of GaN on Pulsed Laser Deposited ZnO buffer Layer”, Proc 1996 MRS Fall Meeting, Boston, MA, Dec. 1996.

 

413.   J. Martin, B. A. Paldus, P. Zalicki, E. H. Wahl, T. G. Owano, J. S. Harris, Jr., C. H. Kruger, R. N. Zare, “Cavity Ring-down Spectroscopy with Fourier-transform-limited Light Pulses”, Chem. Phys. Lett. 258, pp. 63 – 70, May 1996.

 

414.   M. C. Larson, F. Sugihwo, A. R. Massengale, and J. S. Harris, Jr., “Micromachined Tunable Vertical-Cavity Surface-Emitting Lasers”, Technical Digest 1996 IEEE IEDM, December 1996

 

415.   H. Lee, and J. S. Harris, Jr., “Vapor Phase Epitaxy of GaN using GaCl3/N2 and NH3/N2”, J. Crystal Growth, 169, pp. 689– 696, 1996.

 

1 9 9 7

 

416.   W. Wu, G. S. Solomon, J. S. Harris, Jr., and J. R. Tucker, “Atom-resolved Scanning Tunneling Microscopy of Vertically Ordered InAs Quantum Dots”, Appl. Phys. Lett. 71, pp. 1083-1085, Aug. 1997

 

417.   Kameyama, A. R. Massengale, C. H. Dai, and J. S. Harris, Jr., “Analysis of Device Parameters for Pnp-Type AlGaAs/GaAs HBTs Including High-Injection Using New Direct Parameter Extraction”, IEEE Trans. Electron Devices, 44 (1) pp. 1-10, January 1997

 

418.   Y. Okada, J.S. Harris, Jr., A. Sutoh, M. Kawabe, “Growth of abrupt GaAs/Ge heterointerfaces by atomic hydrogen-assisted molecular beam epitaxy” J. Crystal Growth, 175 (pt.2) pp. 1039-1044 May 1997

 

419.   G. S. Solomon, S. Komarov, J. S. Harris, Jr., Y. Yamamoto, “Increased size uniformity through vertical quantum dot columns” J. Crystal Growth, 175 (pt.2) pp. 707-712 May 1997

 

420.   A. R. Massengale, T. Ueda, J. S. Harris, Jr., C. Y. Tai, M. D. Deal, J. D. Plummer, R. Fernandez,“Localised impurity induced layer disordering for lithographic control of the lateral oxidation of AlAs” Electronics Letters, 33 (12) pp. 1087-1089 June 1997

 

421.   F. Sugihwo, M. C. Larson and J. S. Harris, Jr., “30nm Wavelength Tunable Vertical Cavity Lasers”, Proc. International Solid State Devices and Materials Conf., Hamamatsu, Japan, September, 1997, pp. 174.

 

422.   K. Matsumoto, Y. Gotoh, J-I Shirakashi, T. Maeda and J. S. Harris, Jr., “Single Electron Transistor on Atomically Flat a-Al2O3 Substrate made by AFM Nano-Oxidation Process”, Proc. International Solid State Devices and Materials Conf., Hamamatsu, Japan, Sept. 1997, pp. 494.

 

423.   K. L. Vodopyanov, V. Chazapis, C. C. Phillips, B. Sung, and J. S. Harris, Jr., “Intersubband Absorption Saturation Study of Narrow III-V Multiple Quantum Wells in the l = 2.8-9 Ķm Spectral Range”, Semicond. Sci. Technol. 12 (1997), pp. 708-714 June 1997

 

424.   J. A. Trezza, J. S. Powell, and J. S. Harris, Jr., “Zero Chirp Asymmetric Fabry-Perot Electroabsorption Modulator Using Coupled Quantum Wells”, IEEE Photonics Technology Lett, 9 (3), pp. 330-332, March 1997

 

425.   B. Sung, H. C. Chui, M. M. Fejer and J. S. Harris, Jr., “Near-infrared Wavelength Intersubband Transitions in High Indium Content InGaAs/AlAs Quantum Wells Grown on GaAs”, Electron. Lett, 33 (9), pp. 818-820, April, 1997

 

426.   F. Sugihwo, M. Larson, and J. S. Harris, Jr., “Low Threshold Continuously Tunable Vertical Cavity Surface Emitting Lasers with 19.1 nm Wavelength Range,” Appl. Phys. Lett.,  70, pp. 547-549, 1997.

 

427.   H. Lee, M. Yuri, T. Ueda, J. S. Harris, Jr., and K. Sin, “Growth of Thick GaN Films on RF Sputtered AIN Buffer Layer by Hydride Vapor Phase Epitaxy”, J. Electronic Materials 26 (8) pp. 898-902, Aug.1997

 

428.     G. S. Solomon and J. S. Harris, Jr., “Increased Ordering in Vertically Coupled InAs Quantum Dot Arrays,” Proc. Third International Meeting on Quantum Functional Devices, Gaithersburg, MD, November, 1997, pp. 273.

 

429.   M. Franca-Neto, E. Mao and J. S. Harris, Jr., “Low Noise FET Design for Wireless Communications”, 1997 International Electron Devices Meeting, Washington, DC, December 6 - 14, 1997, pp. 305-308.

 

430.   K. Matsumoto, Y. Gotoh, J-I Shirakashi, T. Maeda, and J. S. Harris, Jr., “Fabrication of Single Electron Memory on Atomically Flat a-Al2O3 Substrate made by AFM Nano-Oxidation Process” 1997 International Electron Devices Meeting, Washington, DC, December 6 - 14, 1997, pp. 155-157.

 

431.     C. M. Marcus, S. R. Patel, S. M. Cronenwett, D. R. Stewart, A. G. Huibers, J. S. Harris, Jr., K. Campman, and A. C. Gossard, “Experiments on the Statistics of Coulomb Blockade Peak Spacing: Beyond Random Matrix Theory”. Proc. Twelfth International Conference on the Electronic Properties of Two-Dimensional Systems, Tokyo, Japan, September, 1997, pp. 261.

 

432.     D. R. Stewart, D. Sprinzak, C. M. Marcus, C. I Duruöz, and J. S. Harris, Jr., “Correlations between Ground and Excited State Spectra of a Quantum Dot,” Proc. Twelfth International Conference on the Electronic Properties of Two-Dimensional Systems, Tokyo, Japan, September, 1997, pp. 783

 

433.   L. McCormick, M. Woodside, M. Huang, P. L. McEuen, C. I. Duruöz, and J. S. Harris, Jr., “Scanned Potential Microscopy of a Two-dimensional electron gas,” Proc. Twelfth International Conference on the Electronic Properties of Two-Dimensional Systems, Tokyo, Japan, September, 1997, pp. 141.

 

434.   R. Stewart, D. Sprinzak, C. M. Marcus, C. I Duruöz, and J. S. Harris, Jr., “Correlations between Ground and Excited State Spectra of a Quantum Dot,” Proc. Twelfth International Conference on the Electronic Properties of Two-Dimensional Systems, Tokyo, Japan, September, 1997, p. 783

 

435.   F. Sugihwo, C.-C. Lin, M. Larson and J. S. Harris, Jr., "Electromechanical Tuning of Lasing Wavelength of Vertical Cavity Lasers," 44th. American Vacuum Society National Symposium, San Jose, CA, 1997

 

436.   M. D. Levenson, B. A. Paldus, T. G. Spence, C. C. Harb, J. S. Harris, Jr. and R. N. Zare, “Optical Heterodyne Detection in Cavity Ring-Down Spectroscopy” Chem. Phys Lett. Dec. 1997

 

437.   D. R. Stewart, D. Sprinzak, C. M. Marcus, C. I. Duruoz, and J. S. Harris Jr, "Correlations Between Ground and Excited State Spectra of a Quantum Dot" Science, 278 pp. 1784, Dec. 1997.

 

438.   J. Martin, B. A. Paldus, P. Zalicki, E. H. Wahl, T. G. Owano, J. S. Harris, C. H. Kruger, R. N. Zare "Cavity ring-down spectroscopy with Fourier-transform-limited light pulses", Chem. Phys. Lett. 258 (1-2), pp. 63-70

 

439.   Sugihwo, M. Larson, and J. S. Harris, Jr.,"Monolithically Micromachined Wavelength Tunable Vertical Cavity Lasers," Proc. SOTAPOCS XXVII, Paris, France, 1997.

 

440.   F. Sugihwo, M. Larson, and J. S. Harris, Jr.,"Whispering Gallery Mode Operation in Tunable Vertical Cavity Laser Structure," Electron. Lett.  33, (4) pp. 1467-8, Aug.1997.

 

441.   C. C. Lin, F. Sugihwo, J. S. Harris, Jr.,  “Laser parameter extraction for tunable vertical cavity lasers” Elect. Lett. 33 (20) pp. 1705-1707 September 1997

 

442.   B. A. Paldus, J. S. Harris, J. Martin, J. Xie, R. N. Zare "Laser Diode Cavity Ring-Down Spectroscopy Using Acousto-Optic Modulator Stabilization", J. Appl. Phys., 82 (7) pp. 3199-3204 Oct, 1997

 

1998

 

443.   F. Sugihwo, M. Larson, and J. S. Harris, Jr.,"Simultaneous Optimization of Membrane Reflectance and Tuning Voltage for Tunable Vertical Cavity Lasers," Appl. Phys. Lett. 72 (1) pp. 10-12 Jan., 1998

 

444.   I. L. Chuang, L. M. K. Vandersypen and J. S. Harris, “Bulk Spin Quantum Computation toward Large-scale Quantum Computation,” Dig. Tech. Papers, ‘98 IEEE ISSCC98, Feb. 1998, pp. 96-97.

 

445.   J. Xie, B. A. Paldus, E. H. Wahl, T. G. Owano, C. H. Kruger, R. N. Zare "Near-Infrared Cavity Ringdown Spectroscopy of Water Vapor in an Atmospheric Flame", Chem. Phys. Lett., Sept. 1997 284 (5-6) pp. 387-395 March, 1998.

 

446.   F. Sugihwo, M. Larson, and J. S. Harris, Jr.,"Micromachined Widely Tunable Vertical Cavity Laser Diodes," J. of Microelectromechanical Systems, 7, (1), pp. 48-55, Mar. 1998.

 

447.   Y. Okada, S. Amano, M. Kawabe, B. N. Shimbo and J. S. Harris, Jr., “Nanoscale Oxidation of GaAs-based Semiconductors using Atomic Force Microscope”, J. Appl. Phys. 83 (4) pp. 1844-1847, Feb. 1998.

 

448.   T. F. Huang, J. S. Harris, Jr., “Growth of epitaxial AlxGa1-xN films by pulsed laser deposition” App. Phys. Lett. 72 (10) pp. 1158-1160 March 1998

 

449.   B. A. Paldus, C. C. Harb, T. G. Spence, B. Willke, J. S. Harris, R. N. Zare "Cavity-Locked Ring-Down Spectroscopy", J. Appl. Phys., 1997. 83 (8) pp. 3991-3997 April, 1998

 

450. T. F. Huang, T. Ueda, S. Spruytte and J. S. Harris, Jr., “Growth and Defects of Single Crystalline ZnO Buffer Layer on GaN”, Proc. Internl. Symp. Compound Semiconductors, San Diego, CA, 1997, 156, pp.11-14 1998

 

451. S. A. Komarov, G. S. Solomon, and J. S. Harris, Jr., “Increased Surface Ordering of InAs Island Arrays Using a Multi-Dot Column Subsurface Structure”, Proc. Internl. Symp. Compound Semiconductors, San Diego, CA, 1997, pp. 535-538, 1998

 

452. C.-Y. Hung, J. S. Harris, Jr., A. F. Marshall, and R. A. Kiehl, “Arsenic Precipitation in GaAs for Single-Electron Tunneling Applications Proc. Internl. Symp. Compound Semiconductors, San Diego, CA, 1997, pp. 135-138, 1998.

 

453. A. R. Massengale, C. Y. Tai, M. D. Deal, J. D. Plummer, and J. S. Harris, Jr., “Localized Intermixing of AlAs and GaAs Layers for Lithographic Control of the Lateral Oxidation of AlAs”, Proc. Internl. Symp. Compound Semiconductors, San Diego, CA, 1997, pp. 329-332 1998

 

454. Y. Okada, S. Amano, M. Kawabe, B. Shimbo and J. S. Harris, Jr., “Atomic Force Microscope Nanoscale Lithography for Single-Electron Device Applications”, Proc. Internl. Symp. Compound Semiconductors, San Diego, CA, pp. 577-582, 1998.

 

455. Y. C. Pao and J. S. Harris, Jr., “Two-dimensional Device Simulation for PHEMT Material and Process Control,” Proc. Internl. Symp. Compound Semiconductors, San Diego, CA, 1997, 156 pp. 647-650, 1998

 

456.   F. Sugihwo, C. C. Lin, J. C. Bouteiller, M. Larson and J. S.  Harris, Jr., “Micromachined Tunable Vertical-Cavity Lasers as Wavelength-Selective Tunable Photodetectors,” Proc. Internl. Symp. Compound Semiconductors, San Diego, CA, 1997, p. 561, 1998.

 

457.   K. L. McCormick, M. T. Woodside, M. Huang, P. L. McEuen, C. I. Duruöz, J. S. Harris, Jr., “Scanned potential microscopy of a two-dimensional electron gas” Physica B, 251 pp. 79-83 June 1998

 

458.   C. M. Marcus, S. R. Patel, C. I. Duruöz, J. S. Harris, Jr., K. Campman, A. C. Gossard, “Statistics of peak spacings and widths in the quantum coulomb blockade regime” Physica B, 251 pp. 201-205 June 1998

 

459.   M. D. Levenson, B. A. Paldus, T. G. Spence, C. C. Harb, J. S. Harris, Jr., R. N. Zare, “Optical Heterodyne Detection in Cavity Ring-Down Spectroscopy,” Chem Phys. Lett. 290, No.4-6, July 3, 1998, pp. 335-340

 

460.   C. Y. Hung, J. S. Harris, Jr., A. F. Marshall and R. A. Kiehl, “Annealing Cycle Dependence of Preferential Arsenic Precipitation in AlGaAs/GaAs Layers”, Appl. Phys. Lett. 73, pp. 330-332, July, 1998

 

461.   G. S. Solomon, W. Wu, J. R. Tucker, J. S. Harris, Jr, “Vertical InAs diffusion and surface ordering processes in InAs vertical quantum dot columns” Physica E, 2 (1-4) pp. 709-713 July 1998

 

462.   A. G. Huibers, S. R. Patel, C. M. Marcus, P. W. Brouwer, C. I. Duruöz and J. S. Harris, Jr., “Distributions of the Conductance and its Parametric Derivatives in Quantum Dots”, Phy. Rev. Lett, 81 (9) pp. 1917-1920 Aug. 1998.

 

463.   S. R. Patel, D. R. Stewart, C. M. Marcus, M. Gökcedag, Y. Alhassid, A. D. Stone, C. I. Duruöz and J. S. Harris, Jr., “How Adding Electrons Scrambles the Electronic Spectrum of a Quantum Dot”,

 

464.   S. R. Patel, S. M. Cronenwett, D. R. Stewart, A. G. Huibers, C. M. Marcus, C. I. Duruöz, J. S. Harris, Jr., K. Campman, and A. C. Gossard, “Statistics of Coulomb Blockade Peak Spacings”, Phy. Rev. Lett. 80, 4522-4525, May, 1998.

 

465.   T. Ueda, T.-F. Huang, S. Spruytte, H. Lee, M. Yuri, K. Itoh, T. Baba and J. S. Harris, Jr., “Vapor Phase Epitaxy Growth of GaN on Pulsed Laser Deposited ZnO Buffer Layer”, J. Crys. Growth, 187 (3-4), pp. 340-346 May 1998.

 

466.   L. M. Franca-Neto and J. S. Harris, Jr., “Low Noise Silicon RF FET Design Using Graded Doping and Stress”, Proc. of Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 1998, p. 67.

 

467.   T. Takayama, T. Ueda, M. Ishida, M. Yuri, K. Itoh, T. Baba and J. S. Harris, Jr., “Calculation of Unstable Mixing Region in Wurtzite InGaN,” Proc. MRS Symp. 512, pp. 291-296, 1998.

 

468.   H. Lee and J. S. Harris, Jr., “Iron Nitride Mask and Reactive Ion Etcjomg pf GaN Films,” J. Elec. Matls, 27, (#4), pp. 185-189 Apr. 1998.

 

469.   Y. Okada, S. Amano, Y. Iuchi, M. Kawabe and J. S. Harris, Jr., “AlGaAs/GaAs Tunneling Diode Integrated with nanometre-scale Oxides Patterned by Atomic Force Microscope,” Electron. Lett. 34, pp. 12, 1262-1263, June 1998.

 

470.   Y. Okada, S. Amano, M. Kawabe and J. S. Harris, Jr., “Basic Mechanisms of an Atomic Force Microscope Tip-induced Nano-oxidation Process of GaAs,” J. Appl. Phys., 83, pp. 12, 7998-8001, June 1998.

 

471.   S. M. Cronenwett, S. M. Maurer, S. R. Patel, C. M. Marcus, C. I. Duruöz, J. S. Harris, Jr.,”Mesoscopic Coulomb blockade in one-channel quantum dots,” Phys. Rev. Lett.  81 (26) pp. 5904-5907 Dec. 1998

 

472.   S. R. Patel, D. R. Stewart, C. M. Marcus, M. Gokcedag, Y. Alhassid, A. D. Stone, C. I. Duruöz, J. S. Harris, Jr., “Changing the electronic spectrum of a quantum dot by adding electrons,” Phys. Rev. Lett.  81 (26) pp. 5900-5903 Dec 1998

 

473.   F. Sugihwo, C. C. Lin, L. A. Eyres, M. M. Fejer, J. S. Harris, Jr., “Broadly-tunable narrow-linewidth micromachined laser/photodetector and phototransistor,” Technical Digest, IEEE IEDM, San Francisco, CA, Dec. 1998, p. 665

 

474.   F. Sugihwo, C. C. Lin, J. C. Bouteiller, M. Larson, J. S. Harris, Jr., “Micromachined tunable vertical cavity lasers as wavelength selective tunable photodetectors” Proc. 1997 IEEE International Symp. Compound Semiconductors (Institute Physics Cone Series) 156 pp. 561-564 1998

 

475.   Y. Okada, S. Amano, M. Kawabe, B. N. Shimbo, J. S. Harris, Jr., “Atomic force microscope nanoscale lithography for single-electron device applications” Proc. 1997 IEEE International Symp. Compound Semiconductors (Institute Physics Cone Series), 156 pp. 577-580 1998

 

476.   S. A. Komarov, G. S. Solomon, J. S. Harris, Jr., “Increased surface ordering of InAs island arrays using a multidot column subsurface structure,” Proc. 1997 IEEE International Symp. Compound Semiconductors (Institute Physics Conf Series), 156 p. 535 (1998).

 

477.   A. Eyres, C. B. Ebert, M. M. Fejer, J. S. Harris, Jr., “MBE growth of laterally antiphase-patterned GaAs films using thin Ge layers for waveguide mixing,” Technical Digest Conference on Lasers and Electro-Optics Conference 1998, p. 276

 

478.   A. Paldus, T. G. Spence, C. C. Harb, B. Willke, M. D. Levenson, J. S. Harris, Jr. R. N. Zare, “Advances in CW cavity ring-down spectroscopy,” Technical Digest International Quantum Electronics Conference, 1998, p. 79

 

479.   E. Mao, C. Coldren, J. S. Harris, Jr., D. Yankelevich, O. Solgaard, A. Knoesen, “In-line fiber-optic filter using GaAs ARROW waveguide,” Technical Digest Conference on Lasers and Electro-Optics, 1998, p. 424

 

480.   B. Yairi, C. W. Coldren, D. A. B. Miller, J. S. Harris, Jr., “High-speed quantum well optoelectronic gate based on diffusive conduction recovery,” Proc. SPIE 3490 (1998)

 

481.   K. Matsumoto, Y. Gotoh, T. Maeda, J. A. Dagata and J. S. Harris, “Room Temperature Coulomb Oscillation and Memory Effect for Single Electron Memory made by Pulse-Mode AFM Nano-oxidation Process,” IEDM 1998, San Francisco.

 

1 9 9 9

 

482.   K. Matsumoto, Y. Gotoh, T. Maeda, J. A. Dagata, J. S. Harris, Jr., “Metal-based room-temperature operating single electron devices using scanning probe oxidation,” J. J. Appl. Phys. 38 (1B) pp. 477-479 Jan. 1999

 

483.   L. A. Eyres, C. B. Ebert, P. J. Tourreau, J. S. Harris, M. M. Fejer, “Demonstration of second harmonic generation in all-epitaxially grown orientation-patterned AlGaAs waveguides,” Proc. Conf. Advanced Solid-State Lasers, Boston, MA, Feb. 1999

 

484.   E. Mao, C. W. Coldren, J. S. Harris, Jr. D. R. Yankelevich, O. Solgaard, A. Knoesen, “GaAs/AlGaAs narrow-bandwidth in-line fiber filter,” Proc. SPIE 3749, pp. 94-95, 1999

 

485.   H. Liu, C. C. Lin, J. S. Harris, Jr., “Vertical cavity modulator for optical interconnection and its high speed performance,” Proc. SPIE 3952, pp.234-241, 1999

 

486.   Y. Okada, Y. Iuchi, M. Kawabe, J. S. Harris, Jr., “An AlGaAs/GaAs tunnel diode integrated with nanometer-scale atomic force microscope tip-induced oxides” Jpn. J. Appl. Phys. Part 2-Lett., 38 (2B) pp. L160-L162, Feb. 1999

 

487.   T. F. Huang, A. Marshall, S. Spruytte, J. S. Harris, Jr., “Optical and structural properties of epitaxial GaN films grown by pulsed laser deposition” J. Crystal Growth, 200 (3-4) pp. 362-367 Apr. 1999

 

488.   T. Takayama, T. Ueda, M. Ishida, M. Yuri, K. Itoh, T. Baba, J. S. Harris, Jr., “Calculation of unstable mixing region in wurtzite InGaN” Proc. MRS Spring Meeting, San Francisco, CA, April, 1999, p 291

 

489.   Y. Okada, Y. Iuchi, M. Kawabe, J. S. Harris, Jr., “GaAs/AlGaAs Oxide Tunnel Barriers Fabricated by Atomic Force Microscope Tip-Induced Nano-Oxidation Technique,” 1998 Internl. Symp. Compound Semiconductors (Institute of Physics Publishing), pp. 337-340 (1999)

 

490.   G. S. Solomon, S. Komarov, J. S. Harris, Jr., “Nearest-neighbor spatial ordering of strain-induced islands using a subsurface island superlattice,” J. Cryst. Growth 202 pp. 1190-1193 May 1999

 

491.   C. B. Ebert, L. A. Eyres, M. M. Fejer, J. S. Harris, Jr., “MBE growth of antiphase GaAs films using GaAs/Ge/GaAs heteroepitaxy” J. Crystal Growth, 202 pp. 187-193, May 1999

 

492.   E. Mao, C. W. Coldren, J. S. Harris, Jr., D. R. Yankelevich, O. Solgaard, A. Knoesen, “GaAs AlGaAs multiple-quantum-well in-line fiber intensity modulator” Appl. Phys. Lett. 75 (3) pp. 310-312 July 1999

 

493.   K. L. McCormick, M. T. Woodside, M. Huang, M. S. Wu, P. L. McEuen, C. Duruöz, J. S. Harris, “Scanned potential microscopy of edge and bulk currents in the quantum Hall regime,” Phys. Rev B 59 (7) pp. 4654-4657, Feb. 1999

 

494.   J. S. Harris, Jr., C. C. Lin, W. Martin, F. Sugihwo, M. Larson, B. Paldus, “Micromachined tunable optoelectronic devices for spectroscopic applications,” OSA Conf. Trends in Optics and Photonics. Advanced Semiconductor Lasers and their Applications 31, Santa Barbara, CA, July, 1999

 

495.   S. M. Maurer, S. R. Patel, C. M. Marcus, C. I. Duruöz, J. S. Harris, Jr., “Coulomb blockade fluctuations in strongly coupled quantum dots” Phys. Rev. Lett.  83 (7) pp. 1403-1406 Aug. 1999.

 

496.   B. Yairi, C. W. Coldren, D. A. B. Miller, J. S. Harris, Jr., “High-speed, optically controlled surface-normal optical switch based on diffusive conduction” Appl. Phys. Lett., 75 (5) pp. 597-599 Aug. 1999

 

497.   C. Y. Hung, J. S. Harris, Jr., A. F. Marshall, R. A. Kiehl, “Size stabilization of arsenic precipitates in nonstoichiometric GaAs-based compounds,” Appl. Phys. Lett. 75 (7) pp. 917-919 Aug. 1999

 

498.   L. M. K. Vandersypen, C. S. Yannoni, M. H. Sherwood, I. L. Chuang, 'Realization of logically labeled effective pure states for bulk quantum computation,' Phys. Rev. Lett. 83, 3085, Aug. (1999).

 

499.   L. M. Franca-Neto, J. S. Harris, “Excess noise in sub-micron silicon FET: characterization, prediction and control,” Proc. 29th European Solid-State Device Research Conference, Leuven, Belgium, Sept. 1999

 

500.   K. Matsumoto, Y. Gotoh, T. Maeda, J. S. Harris,  “Room temperature single electron transistor by AFM nano-oxidation process-coincidence in experimental and theoretical results”, Proc. State-of-the-Art Program on Compound Semiconductors XXXI, Honolulu, HI, 17-22 Oct. 1999, pp. 215-17

 

501.   C. W. Coldren, S. G. Spruytte, J. S. Harris, M. C.Larson, “Group III-nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy,” Proc. LEOS'99. 12th Annual Meeting, San Francisco, CA, Nov. 1999, vol. 2 pp. 457-8

 

502.   M. B. Yairi, H. V. Demir, C. W. Coldren, D. A. B. Miller, J. S. Harris, Jr., “Optically-controlled optical gate using a double diode structure,” Proc. LEOS'99. 12th Annual Meeting, San Francisco, CA, Nov. 1999

 

503.   C.-Y. Hung, A. F. Marshall, D.-K. Kim, W. D. Nix, J. S. Harris, Jr., R. A. Kiehl, "Strain Directed Assembly of Nanoparticle Arrays within a Semiconductor," J. Nanoparticle Research, 1, pp 329-347, (1999).

 

504.   G. Huibers, J. A. Folk, S. R. Patel, C. M. Marcus, C. I. Duruöz, J. S. Harris, Jr., “Low-temperature saturation of the dephasing time and effects of microwave radiation on open quantum dots” Phys. Rev. Lett. 83 (24) pp. 5090-5093 Dec. 1999

 

505.   S. G. Spruytte, C.W. Coldren, A.F. Marshall, M. C. Larson, J. S. Harris, "MBE Growth of Nitride-Arsenide Materials for long Wavelength Opto-electronics," Proc. Mat. Res. Soc. Symp. GaN and related alloys, Vol. 595, 1999, pp. W8.4.1-6.

 

2 0 0 0

 

506.   K. Matsumoto, Y. Gotoh, T. Maeda, J. A. Dagata, J. S. Harris, Jr., “Room-temperature single-electron memory made by pulse-mode atomic force microscopy nano oxidation process on atomically flat alpha-alumina substrate” Appl. Phys. Lett. 76 (2) pp. 239-241 Jan. 2000

 

507.   H. Liu, C.-C. Lin, and J. S. Harris, Jr., "Vertical Cavity Modulator for Optical Interconnection and its High Speed Performance," Proc. SPIE Photonics West 2000, San Jose, CA, Jan. 2000.

 

508.   E. Mao, D. R. Yankelevich, C. W. Coldren, O. Solgaard, A. Knoesen, J. S. Harris, Jr., “A multiple-quantum-well GaAs/AlGaAs in-line fiber intensity modulator,” Proc. SPIE Photonics West 2000 3936, pp. 50-57, 2000

 

509.   C. C. Lin, W. Martin, J. S. Harris, F. Sugihwo, “Optical gain and collector current characteristics of resonant-cavity phototransistors,” Appl. Phys. Lett.76 (9), 1188-1190, Feb. 2000

 

510.   L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, B. Gerard, E. Lallier, “Quasi-phasematched frequency conversion in thick all-epitaxial, orientation-patterned GaAs films,” Proc. Topical Meeting on Advanced Solid-State Lasesr (ASSL 2000, Davos, Switzerland, Feb. 2000

 

511.   G. Arft, D. R. Yankelevich, A. Knoesen, E. Mao, J. S. Harris, Jr., “In-line fiber evanescent field electrooptic modulators” J. Nonlinear Optical Phys. Materials, 9 (1) pp. 79-94, March 2000

 

512.   E. Mao, D. R. Yankelevich, C. C. Lin, O. Solgaard, A. Knoesen, J. S. Harris, Jr., “Wavelength-selective semiconductor in-line fibre photodetectors” Electron. Lett. 36 (6) pp. 515-516, March 2000.

 

513.   S. G. Spruytte, C. W. Coldren, A. F. Marshall, J. S. Harris, "Compositional Evolution and Structural Changes during Anneal of Group III-Nitride-arsenide Alloys," Proc. MRS Spring 2000 Meeting, San Francisco, April 2000

 

514.   Y. Gotoh, K. Matsumoto, B. Bubanja, F. Vazquez, T. Maeda, J. S. Harris Experimental and simulated results of room temperature single electron transistor formed by atomic force microscopy nano-oxidation process,” Jpn. J. Appl. Phys. 39 (4B) pp. 2334-2337 April 2000

 

515.   C. W. Coldren, M. C. Larson, S. G. Spruytte, J. S. Harris, Jr.,  1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions” Electron. Lett. 36 (11) pp. 951-952 May 2000

 

516.   C. W. Coldren, M. C. Larson, S. G. Spruytte, H. E. Garrett, J. S. Harris, Jr., “Pulsed 25-108 degrees C operation of GaInNAs multiple quantum well vertical cavity lasers,” Tech. Digest CLEO 2000, TOPS  39, San Francisco, CA, May 2000. Pp. 229-230

 

517.   L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, B. Gerard, K. Becouarn, E. Lallier, “Thick (200 mu m) orientation-patterned GaAs for bulk quasi-phase-matched nonlinear frequency conversion,” Tech. Digest CLEO 2000, TOPS  39, San Francisco, CA, May 2000

 

518.   H. L. Kung, D. A. B. Miller, P. Atanackovic, C. C. Lin, J. S. Harris, Jr., L. Carraresi, J. E. Cunningham, W. Y. Jan, “Wavelength monitor based on two single-quantum-well absorbers sampling a standing wave pattern” Appl. Phys. Lett. 76 (22) pp. 3185-3187 May 2000

 

519.   C. W. Coldren, S. G. Spruytte, J. S. Harris, Jr., M. C. Larson, “Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy” J. Vac. Sci. Technol. B 18 (3) pp. 1480-1483, May-June 2000

 

520.   S. G. Spruytte, C. W. Coldren, A. F. Marshall, M. C. Larson, J. S. Harris, “MBE growth of nitride-arsenide materials for long wavelength opto-electronics,” MRS INTERNET J. Nitride Semiconductor Res. 5 (S1) pp. U407-U412, 2000

 

521.   W. A Martin, C. C. Lin, F. Sugihwo, J. S. Harris, Jr., “Frequency locking of micromachined tunable VCSELs to external wavelength selective filters,” Digest LEOS Summer Topical Meeting Optical Sensing in Semiconductor Manufacturing, Aventura, FL, July 2000

 

522.   S. G. Spruytte, C. W. Coldren, M. C. Larson, J. S. Harris, “Incorporation of nitrogen in group III-nitrides-arsenides grown by molecular beam epitaxy (MBE),” Proc. 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI, 3-7 July 2000, Canberra, Australia; pp.260-3

 

523.   Y. Okada, Y. Iuchi, M. Kawabe, J. S. Harris, Jr., “Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process” J. Appl. Phys. 88 (2) pp. 1136-1140, July 2000

 

524.   T. Takayama, M. Yuri, K. Itoh, T. Baba, J. S. Harris, Jr., “Theoretical analysis of unstable two-phase region and microscopic structure in wurtzite and zinc-blende InGaN using modified valence force field model” J. Appl. Phys. 88 (2) pp. 1104-1110 July 2000

 

525.   Y. Gotoh, K. Matsumoto, T. Maeda, E. B. Cooper, S. R. Manalis, H. Fang, S. C. Minne, T. Hunt, H. Dai, J. S. Harris, Jr., C. F. Quate, “Experimental and theoretical results of room-temperature single-electron transistor formed by the atomic force microscope nano-oxidation process,” J. Vac. Sci. Technol. A 18 (4), pp. 1321-1325, Jul-Aug, 2000

 

526.   E. Mao, D. R. Yankelevich, C. C. Lin, O. Solgaard, A. Knoesen, J. S. Harris, “Narrow-band light emission in semiconductor-fibre asymmetric waveguide coupler,” Elect. Lett. 36 (16) pp. 1378-1379 Aug. 2000

 

527.   M. B. Yairi, H. V. Demir, C. W. Coldren, J. S. Harris, D. A. B. Miller, “Demonstration of an optoelectronic dual-diode optically controlled optical gate with a 20 picosecond repetition period,” Tech. Digest Conf. Nonlinear Optics: Materials, Fundamentals, and Applications. TOPS 46, Kaua'i-Lihue, HI, Aug. 2000

 

528.   C.C. Lin, W. A. Martin, J. S. Harris, Jr., E. Chan, “Modeling of MEMS tunable optoelectronic device mirror,” Tech. Digest 2000 IEEE/LEOS International Conference on Optical MEMS, Kauai, HI, Aug. 2000

 

529.   T. Takayama, M. Yuri, K. Itoh, T. Baba, J. S. Harris, “Analysis of unstable two-phase region in wurtzite Group III nitride ternary alloy using modified valence force field model,” Jpn. J. Appl. Phys. 39 (9A) pp. 5057-5062 Sept. 2000

 

530.   M. C. Larson, C. W. Coldren, S. G. Spruytte, H. E. Petersen, J. S. Harris, “Low threshold current continuous-wave GaInNAs/GaAs VCSELs,” Technical Digest. 2000 IEEE 17th International Semiconductor Laser Conference, 25-28 Sept. 2000, Monterey, CA, USA, p.9-10

 

531.   P. Krispin, S. G. Spruytte, J. S. Harris, K. H. Ploog, “Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance-voltage measurements,” J. Appl. Phys. 88 (7) pp. 4153-4158 Oct. 2000

 

532.   T. J. Pinguet, L. A. Eyres, C. B. Ebert, O. Levi, M. M. Fejer, J. S. Harris, “Epitaxial orientation-patterning of AlGaAs films for nonlinear optical devices,” Proc. IEEE Twenty-Seventh International Symposium on Compound Semiconductors, 2-5 Oct. 2000, Monterey, CA, pp. 229-232

 

533.   S. G. Spruytte, M. C. Larson, W. Wampler, C. W. Coldren, J. S. Harris, “Molecular beam epitaxial growth of group III-nitride-arsenides for long wavelength optoelectronics,” Proc. IEEE Twenty-Seventh International Symposium on Compound Semiconductors, 2-5 Oct. 2000, Monterey, CA, pp. 61-66.

 

534.   E. Mao, C. C. Lin, O. Solgaard, J. S. Harris, “Narrow-band light emission in a semiconductor-fiber asymmetric waveguide coupler,” Proc. IEEE Twenty-Seventh International Symposium on Compound Semiconductors, 2-5 Oct. 2000, Monterey, CA, pp. 419-423

 

535.   B. E. Nelson, M. Gerken, D. A. B. Miller, R. Piestun, C. C. Lin, J. S. Harris, “Use of a dielectric stack as a one-dimensional photonic crystal for wavelength demultiplexing by beam shifting,” Optics Lett. 25 (20) pp. 1502-1504, Oct 2000

 

536.   B. E. Nelson, M. Gerken, D. A. B. Miller, R. Piestun, C. C. Lin, J. S. Harris, Jr., “Wavelength demultiplexing by beam shifting using a dielectric stack as a one-dimensional photonic crystal,” Proc. LEOS 2000, Rio Grande, Puerto Rico, Nov. 2000

 

537.   L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, B. Gerard, E. Lallier, “All-epitaxial orientation-patterned GaAs for nonlinear optical frequency conversion,” Proc. LEOS 2000, Rio Grande, Puerto Rico, Nov. 2000

 

538.   M. C. Larson, C. W. Coldren, S. G. Spruytte, H. E. Petersen, J. S. Harris, “Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers,” IEEE Photon. Techn.Lett. 12 (12) pp. 1598-1600 Dec. 2000

 

539.   J.S. Harris, Jr. “Tunable long wavelength vertical cavity lasers: the engine of next generation optical networks?”  IEEE/LEOS Special Millenium Issue, IEEE J. Sel. Top. Quan. Elect. 6, 1145-1160, Nov.-Dec., 2000.

 

2001

 

540.   T. I. Kamins, R. S. Williams, D. P. Basile, T. Hesjedal, J. S. Harris, “Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms,” J. Appl. Phys. 89 (#2) pp. 1008-1016, Jan. 2001

 

541.   T. Takayama, M. Yuri, K. Itoh, T. Baba, J. S. Harris, “Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model,” J. Crystal Growth 222 (1-2) pp. 29-37, Jan. 2001

 

542.   S. G. Spruytte, M. A. Wistey, M.C. Larson, C.W. Coldren, H. Garrett, J.S. Harris, “1.3 micron opto-electronic devices on GaAs using group III-Nitride-Arsenides,” Proc.SPIE Photonics West, San Jose, CA, 4286, pp22-33, January 2001

 

543.   J. A. Folk, S. R. Patel, K. M. Birnbaum, C. M. Marcus, C. I. Duruöz, J. S. Harris, “Spin degeneracy and conductance fluctuations in open quantum dots,” Phys. Rev.Lett. 86 (10) pp. 2102-2105, March, 2001

 

544.   S. Spruytte, C. Coldren, J. Harris, D. Pantelidis, H.-J. Lee, J. Bravman, M. Kelly, "Use of angle resolved X-Ray Photoelectron Spectroscopy for determination of depth and thickness of the different layers in a layer structure", J. Vac. Sci. Technol. 19 (2), pp.603-608, Mar.-April 2001

 

545.   S. Spruytte, W. Wampler, P. Krispin, C. Coldren, M. Larson, K. Ploog, J. Harris, "Incorporation of Nitrogen in Nitride-Arsenides: Origin of improved Luminescence Efficiency after Anneal," J. Appl. Phys. 89 (8), pp. 4401-4406, April 15, 2001

 

546.   T. Pinguet, T. Skauli, O. Levi, K. Vodopyanov, L.A. Eyres, L. Scaccabarozzi, M.M. Fejer, J.S. Harris, T.J. Kulp, S. Bisson, B. Gerard, L. Becouarn, and E. Lallier, "Characterization of 0.5 mm Thick films of orientation-patterned GaAs for nonlinear optical applications", Proc. Conf Lasers and Elecro-Optics (CLEO) 2001, Baltimore, MD, April, 2001

 

547.   O. Levi, T. Pinguet, T. Skauli, L.A. Eyres, L. Scaccabarozzi, M.M. Fejer, J.S. Harris, T.J. Kulp, S. Bisson, B. Gerard, L. Becouarn, and E. Lallier, "Mid-infrared generation by difference frequency mixing in orientation-patterned GaAs", Proc. Conf Lasers and Elecro-Optics (CLEO) 2001, Baltimore, MD, May, 2001

 

548.   O. Levi, T. Skauli, T. J. Pinguet, L. A. Eyres, L. Scaccabarozzi, M. M. Fejer, J. S. Harris Jr., T.  J. Kulp, S. Bisson, B. Gerard, L. Becouarn, E. Lallier,”Tunable mid-IR generation by difference-frequency mixing in orientation-patterned GaAs,” Proc. Conf Lasers and Elecro-Optics (CLEO) 2001, Baltimore, MD, May, 2001

 

549.   C. C. Lin, W. A. Martin, J. S. Harris, Jr., "Opto-mechanical model of surface micromachined tunable optoelectronic devices", Proc. Conf Lasers and Elecro-Optics (CLEO) 2001, Baltimore, MD, May, 2001

 

550.   R. Urata, R. Takahashi, V. A. Sabnis, D. A. B. Miller, J. S. Harris, “High-speed sample and hold using low-temperature-grown GaAs MSM switches for photonic A/D conversion,” Proc. Conf Lasers and Elecro-Optics (CLEO) 2001, Baltimore, MD, May, 2001

 

551.   P. Krispin, S. G. Spruytte, J. S. Harris, and K. H. Ploog , “Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy,” J. Appl. Phys., 89 (11), pp. 6294-6301, June 2001

 

552.   S. G. Spruytte, M. C. Larson, W. Wampler, C. W. Coldren. H. E. Petersen, P. Krispin, S. T. Picraux, K. Ploog, J. S. Harris, “Nitrogen incorporation in Group III-Nitride Arsenide materials grown by elemental source MBE,” J. Crystal Growth 227, pp. 506-515, July, 2001

 

553.   H. Liu, C. C. Lin, J. S. Harris, “High-speed, dual-function vertical cavity multiple quantum well modulators and photodetectors for optical interconnects,” Optical  Engr. 40 (7) pp. 1186-1191, July 2001

 

554.   M. C. Larson, C. C. Coldren, S. G. Spruytte, H. E. Petersen, H. E Garrett, J. S. Harris, “GaInNAs long wavelength vertical cavity lasers,” Technical Digest. CLEO/Pacific Rim 15-19 July 2001, Chiba, Japan; pp. 594-5

 

555.   S. Spruytte, M. C. Larson, W. Wampler, C. W. Coldren, and J. S. Harris, "Molecular beam epitaxy growth of Group III-Nitrides-Arsenides for Long Wavelength Optoelectronics," Proc. 27th International Symposium on Compound Semiconductors, Monterey, CA, September, 2000.

 

556.   R. Urata, R. Takahashi, V. A. Sabnis, D. A. B. Miller, J. S. Harris, “Ultrafast differential sample and hold using low-temperature-grown GaAs MSM for photonic A/D conversion,” IEEE Photon. Technol. Lett. 13 (7) pp. 717-719, July 2001

 

557.   L. A. Eyres, P. J. Tourreau, T. J. Pinguet, C. B. Ebert, J. S. Harris, M. M. Fejer, L. Becouarn, B. Gerard, E. Lallier, “All-epitaxial fabrication of thick, orientation-patterned GaAs films for nonlinear optical frequency conversion,” Appl. Phys. Lett. 76 (7) pp. 904-906, Aug. 13, 2001

 

558.   J. S. Harris, Jr., “GaInNAs, a new material for long wavelength VCSELs,” 2001 Digest of LEOS Summer Topical Meetings: Advanced Semicondutor Lasers and Applications, 30 July-1 Aug. 2001, Copper Mountain, CO

 

559.   P. Krispin, S. G. Spruytte, J. S. Harris, and K. H. Ploog, “Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy,” J. Appl. Phys., 90 (5), pp. 2405-2410 Sept. 2001

 

560.   T. Takayama, M. Yuri, K. Itoh, T. Baba, J. S. Harris, Jr., “Theoretical predictions of unstable two-phase regions in wurtzite group-III-nitride-based ternary and quaternary material systems using modified valence force field model,” J. Appl. Phys. 90 (5) pp. 2358-2369, Sept. 2001

 

561.   W. Ha, V. Gambin, M. Wistey, S. Kim, J. Harris, “High efficiency Multiple Quantum Well GaInNAs/GaNAs Ridge-Waveguide Laser diode operating out to 1.4Ķm,” Proc. Intern. Symp. Compound Semiconductors, (Tokyo, Japan) 2001.

 

562.   T. Skauli, K. Vodopyanov, T.J. Pinguet, O. Levi, L.A. Eyres, M.M. Fejer, J. S. Harris, V. Gerard, L. Becouarn, E. Lallier, “Second harmonic generation in thick orientation-patterned GaAs,” Proc. Optical Society America annual meeting 2001, Long beach, CA, October 2001

 

563.   W. Ha, V. Gambin, M. Wistey, S. Bank, S. Kim, J. S. Harris Jr. Long wavelength GaInNAs ridge waveguide lasers with GaNAs barriers, Proc. IEEE Lasers and Electro-Optics Society (LEOS), San Diego, CA, November, 2001

 

564.   C. C. Lin, J. Fu, J. S. Harris, Jr., “Widely Tunable Micromachined Optical Filter with Adjustable Tuning Characteristics,” Proc. IEEE Lasers and Electro-Optics Society (LEOS), San Diego, CA, November, 2001

 

565.   T. Pinguet, L. Scaccabarozzi, O. Levi, T. Skauli, L.A. Eyres, M.M. Fejer, and J.S. Harris, "Second harmonic generation in orientation-patterned AlGaAs waveguides pumped at 1.55 microns", Proc. IEEE Lasers and Electro-Optics Society (LEOS), San Diego, CA, November, 2001

 

566.   V. A. Sabnis, H. V. Demir, M. Yairi, D.A.B. Miller, J.S. Harris, "Observation of Wavelength-Converting Optical Switching at 2.5 GHz in a Surface Normal Illuminated Waveguide," Proc. IEEE Lasers and Electro-Optics Society (LEOS), San Diego, CA, November, 2001

 

567.   J. A. Folk, C. M. Marcus and J. S. Harris, “Decoherence in nearly isolated quantum dots,” Phys. Rev. Lett. 87 (20) pp. 6802-6804 November, 2001

 

568.   V. Gambin, W. Ha, M. Wistey, S. Kim, J. S. Harris, “GaInNAs material properties for long wavelength opto-electronic devices,” Proc. MRS Conf. Progress in Semiconductor Materials for Optoelectronic Applications. Symposium, Boston, MA, pp.333-41, November,  2001

 

569.   P. Krispin, S. G. Spruytte, J. S. Harris, K. H. Ploog, “Deep-level defects in MBE grown Ga(A,N) layers,” Physica B 308, pp. 870-873, December,  2001

 

570.   J. S. Harris, Jr., “GaInNAs, a new material for long wavelength VCSELs,” J. Korean Phys. Soc. 39 (suppl. pt. 1) pp. S306-12, Dec. 2001

 

2002

 

571.   W. Ha, V. Gambin, S. Bank, M. Wistey, S. Kim, J. S. Harris Jr., High Efficiency Multiple Quantum Well GaInNAs/GaNAs Ridge-Waveguide Diode Lasers, Proc. SPIE Photonics West 2002, San Jose, CA, 4651, pp.42-8, January, 2002,

 

572.   E. Thrush, O. Levi, K. Wang, M. Wistey, J. S. Harris, S. J. Smith, "Integrated semiconductor fluorescent detection system for biochip and biomedical applications," Proc. SPIE Photonics West, San Jose, CA, Vol. 4626, pp. 289-97, January, 2002.

 

573.   S. E. Bisson, T. J. Kulp, R. Bambha, K. Armstrong, 0. Levi, T. Pinguet, L. A. Eyres, M. M. Fejer, J.S. Harris, “Long-wave IR Chemical Sensing based on Difference Frequency Generation in Orientation-Patterned GaAs,” Proc. SPIE Photonics West, San Jose, CA, 4634, pp. 78-82, January, 2002.

 

574.   C. C. Lin, W. A. Martin, J. S. Harris, Jr., “Optomechanical Model of Surface Micromachined Tunable Optoelectonic Devices,” IEEE J. Select. Topics Quantum Elect. 8 (1), pp.80-87, January-February, 2002.

 

575.   H. L. Kung, S. R. Bhalotra, J. D. Mansell, D. A. B. Miller, J. S. Harris, “Standing-wave Fourier transform spectrometer based on integrated MEMS mirror and thin-film photodetector,” IEEE J. Select. Topics Quantum Elect. 8 (1), pp. 98-105, January-February, 2002

 

576.   W. Ha, J. S. Harris, “Long Wavelength GaInNAs(Sb) Lasers on GaAs,” Proc. Samsung Humantech, Seoul, Korea, vol. 8, February, 2002.

 

577.   W. Ha, V. Gambin, M. Wistey, S. Bank, H. Yuen, S. Kim, and J.S. Harris Jr., "Long Wavelength GaInNAsSb/GaNAsSb Multiple Quantum Well Lasers," Electron. Lett. 38, pp. 277-278, March, 2002.

 

578.   T. I. Kamins, R. S. Williams, D. P. Basile, T. Hesjedal, J. S. Harris, “Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates,” Physica E 13 (2-4), pp. 995-998, March, 2002

 

579.   P. Krispin, S. G. Spruytte, J. S. Harris, K. H. Ploog, “Electron traps in MBE Ga(A,N) layers grown by molecular beam epitaxy,” Appl. Phys. Lett. 80 (12), pp. 2120-2122, March 25, 2002.

 

580.   T. Skauli, K. L. Vodopyanov, T. J. Pinguet, A. Schober, O. Levi, L.A. Eyres, M. M. Fejer, J. S. Harris, B. Gerard, L. Becouarn, and E. Lallier, “Measurement of nonlinear coefficient of orientation-patterned GaAs and demonstration of highly efficient second harmonic generation”, Opt. Lett. 27, pp. 628-630 April 15, 2002.

 

581.   J. S. Harris, V. Gambin, “GaInNAs: A New Material in the Quest for Communications Lasers,” Proc. Spring MRS Meeting, San Francisco, CA,  722,  pp. 117-133, April, 2002

 

582.   V. Lordi, V. Gambin, W. Ha, S. Bank, J. Harris, “Examination of N incorporation into GaInNAs,” Proc. Spring MRS, San Francisco, CA, vol. 722, April, 2002.

 

583.   Q. Tang, X. Liu, T. I. Kamins, G. S. Solomon, J. S. Harris, Jr., “Ti-Island-Catalyzed Si Nanowire Growth by Gas-Source MBE: Morphology and Twinning,” Proc. Spring MRS Meeting, San Francisco, CA, April, 2002

 

584.   W. Ha, V. Gambin, M. Wistey, S. Bank, S. Kim J. S. Harris, Jr., “Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4Ķm,” IEEE Photon. Technol. Lett. 14 (5), pp. 591-593, May, 2002

 

585.   E. P. Thrush, O. Levi, K. Wang, J. S. Harris Jr., and S. J. Smith, “Integrated semiconductor fluorescent detection system for biochip and biomedical applications”, Proceedings of the SPIE-The International Society for Optical Engineering , Genomics, Proteomics, and Related Technologies for Biomedical Applications,  4626, pp.56-60, San Jose, CA (2002).

 

586.   K. L. Vodopyanov, T. Skauli, T. J. Pinguet, A. Schober, O. Levi, L. A. Eyres, M. M. Fejer, J. S. Harris, B. Gerard, L. Becouarn, and E. Lallier, “Highly efficient SHG in all-epitaxial quasi-phase-matched GaAs”, in TOPS Vol. 57, Conference on Lasers and Electro-Optics (CLEO 2002), Technical Digest (Optical Society of America), Washington DC, pp. 419-20, May, 2002

 

587.   T. Skauli, P. S. Kuo, O. Levi, K. L. Vodopyanov, T. Pinguet, L. A. Eyres, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, and E. Lallier, “Thermo-optic characterization of GaAs for quasi-phase-matched nonlinear-optical applications”, in TOPS Vol. 57, Conference on Lasers and Electro-Optics (CLEO 2002), Technical Digest (Optical Society of America), Washington DC, pp. 668-69, May 2002

 

588.   O. Levi, T. Skauli, T. Pinguet, K. L. Vodopyanov, P. S. Kuo, X. Yu, L. A. Eyres, J. S. Harris and M. M. Fejer, T. J. Kulp, S. Bisson, B. Gerard, L. Becouarn, and E. Lallier, “Continuously tunable Mid-IR Frequency Generation in Orientation Patterned GaAs”, in TOPS Vol. 57, Conference on Lasers and Electro-Optics (CLEO 2002), Technical Digest (Optical Society of America), Washington DC, pp 416-17, May, 2002.

 

589.   E. Thrush, O. Levi, K. Wang, J. S. Harris, Jr., S. J. Smith, “Integrated semiconductor fluorescent detection system for biochip and biomedical applications,” Proc. 2nd Annual International IEEE-EMBS Special Topic Conference on Microtechnologies in Medicine and Biology, Madison, WI, May 2002,

 

590.   W. Ha, V. Gambin, S. Bank, M. Wistey, H. Yuen, S Kim, J. S. Harris, Jr. “A 1.5 Ķm GaInNAs(Sb) laser grown on GaAs by MBE,” Proc. IEEE Device Research Conf., 24-26 June 2002, Santa Barbara, CA, pp.139-40, June, 2002

 

591.   J. S. Harris, Jr., “GaInNAs long wavelength lasers: Progress and Challenges,” Semicond. Sci. Techn. 17 (8), pp. 880-891, August, 2002

 

592.   V. Gambin, W. Ha, M. Wistey, S. Bank, H. Yuen, S. Kim J. S. Harris, Jr., “GaInNAsSb for 1.3-1.6Ķm long wavelength lasers grown by molecular beam epitaxy,” IEEE J. Select Topics Quant. Electron. 8 (4), pp. 795-800, July-August, 2002

 

593.   W. Ha, V. Gambin, S. Bank, M. Wistey, H. Yuen, S. Kim J. S. Harris, Jr., “Long-wavelength GaInNAs(Sb) lasers on GaAs,” IEEE J. Quant. Electron. 38, pp. 1260 –1267, September, 2002

 

594.   Q. Tang, X. Liu, T. I. Kamins, G. S. Solomon, J. S. Harris, “Twinning in TiSi2-island catalyzed Si nanowires grown by gas-source molecular-beam epitaxy,” Appl. Phys. Lett. 81 (13), pp. 2451-2453, September, 2002

 

595.   W. Ha, V. Gambin, S. Bank, M. Wistey, H. Yuen, S. Kim, J. S. Harris Jr., “A 1.5 mm GaInNAs(Sb) Laser Grown on GaAs by MBE,” Proc. 18th IEEE International Semiconductor Laser Conference (ISLC), Garmisch, Germany, September, 2002

 

596.   R. Urata, L. Y. Nathawad, K. Ma, R. Takabashi, D. A. B. Miller, B.A. Wooley, J. S.Harris, “Ultrafast sampling using low temperature grown GaAs MSM switches integrated with CMOS amplifier for photonic A/D conversion,” IEEE Lasers and Electro-Optics Society, 2002. (LEOS). 15th Annual Meeting 2, pp. 809–10, November, 2002

 

597.   H. Chin, G. A. Keeler, N. C. Helman, M. Wistey, D. A. B. Miller, J. S. Harris, Jr., “Differential optical remoting of ultrafast charge packets using self-linearized modulation,” IEEE Lasers and Electro-Optics Society, 2002. (LEOS). 15th Annual Meeting 2, pp. 467-8, November, 2002

 

598.   P. Krispin, V. Gambin, J. S. Harris, K. H. Ploog, “Ga(A,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy,” Appl. Phys. Lett. 81 (21), pp. 3987-3989, November, 2002

 

599.   O. Levi, T. J. Pinguet, T. Skauli, L. A. Eyres, K. R. Parameswaran, J. S. Harris Jr., M. M. Fejer, T. J. Kulp, S. Bisson, B. Gerard, E. Lallier, and L. Becouarn, “Difference-frequency generation of 8Ķm radiation in orientation-patterned GaAs crystal,” Opt. Lett. 27 (23), pp. 2091—2093, December 1, 2002.

 

2003

 

600.   J. S. Harris, “GaInNAsSb long wavelength lasers on GaAs,” Proc. SPIE-Photonics West, 4995, Novel In-Plane Semiconductor Lasers II, pp. 54-65, January, 2003

 

601.   E. Thrush, O. Levi, K. Wang, M.A. Wistey, J.S. Harris Jr., S.J. Smith, "High throughput integration of optoeletronics devices for biochip fluorescent detection."  SPIE-Photonics West, 4982, Microfludics, BioMEMS, and Medical Microsystems, pp. 162-169, January, 2003

 

602.   V. Lordi, V. Gambin, S. Friedrich, T. Funk, T. Takizawa, K. Uno, and J. S. Harris, "Nearest-neighbor configuration in (GaIn)(NAs) probed by x-ray absorption spectroscopy," Phys. Rev. Lett. 90 (14), 145505, April, 2003

 

603.   V. Gambin, V. Lordi, W. Ha, M. Wistey, K. Volz, S. Bank, H. Yuen, J. Harris, “High intensity 1.3 – 1.6 mm luminescence and structural changes on anneal from MBE grown (Ga, In)(N, As, Sb),” J. Crystal Growth 251 (1-4), pp. 408-411, April, 2003

 

604.   S. Bank, W. Ha, V. Gambin, M. Wistey, H. Yuen, L. Goddard, S. Kim, J. S. Harris Jr., “1.5Ķm GaInNAs(Sb) lasers grown on GaAs by MBE,” J. Crystal Growth 251 (1-4), pp. 367-371, April, 2003

 

605.   X. Yu, L. Scaccabarozzi, O. Levi, T. J. Pinguet, M. M. Fejer, J. S. Harris Jr." Template design and fabrication for low-loss orientation-patterned nonlinear AlGaAs waveguides pumped at 1.55 um" J. Crystal Growth 251, pp. 794-799, April 2003.

 

606.   K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. Yuen, S. Bank, J. S. Harris, Jr., “The role of Sb in the MBE growth of (GaIn)(NAsSb),” J. Crystal Growth 251 (1-4), pp. 360-366, April, 2003

 

607.   X. Liu, Q. Tang, T. I. Kamins,, J. S. Harris, Jr., “Heavy Arsenic Doping of Silicon by Molecular Beam Epitaxy,” J. Crystal Growth 251 (1-4), pp. 651-656, April, 2003

 

608.   Q. Tang, X. Liu, T. I. Kamins, G. S. Solomon, J. S. Harris, Jr., “Nucleation of Ti-Catalyzed Self-Assembled Kinked Si Nanowires Grown by Gas Source MBE,” J. Crystal Growth 251 (1-4), pp. 662-665, April, 2003

 

609.   Kai Ma, Ryohei Urata, David A. B. Miller and James S. Harris, Jr., “Low Temperature Growth of GaAs on Si Substrates for Ultra-fast Photoconductive Switches,”Proc. MRS. Symp. San Francico, CA, April 2004, 768 Materials Research Society, pp.81-86, April, 2003

 

610.   J. S.Harris, Jr., “GaInNAsSb based long-wavelength lasers,Proc. International Conf Indium Phosphide and Related Materials, 12-16 May 2003, Santa Barbara, CA, pp.333-8, May, 2003

 

611.   R. Urata, R. Takahashi, V. A. Sabnis, D. A. B. Miller, J. S. Harris,  “Ultrafast optoelectronic sample-and-hold using low-temperature-grown GaAs MSM,” IEEE Photon. Techn. Lett. 15 (5), pp.724-6, May 2003

 

612.   S. R. Bhalotra, H. L. Kung, J. Fu, N. C. Helman, O. Levi, D. A. B. Miller, J . S. Harris, Jr., "Standing-wave microsensor for adaptive analysis of spectral coherence,"  Proc. OSA Conf. on Lasers and Electro-Optics (CLEO), Baltimore, MD, June 2003, Paper CThA.

 

613.   K. Ioakeimidi, R. Leheny, S. Gradinaru, K. Ma, R. Aldana, J. Clendenin, J. S. Harris, R. F. W. Pease,  “A 100Gs/s Photoelectronic A/D converter,” Proc. Conf. Lasers and Electro-Optics/Quantum Electronics and Laser Science (CLEO/QELS 2003), Baltimore, MD, pp.1221-23, June 2003

 

614.   V. A. Sabnis, H. V. Demir, O. Fidaner, J. S. Harris, Jr., D. A. B. Miller, J.-F. Zheng, N. Li, T.-C. Wu, Y.-M. Houng,  "Optically-switched dual-diode electroabsorption modulators,”   Integrated Photonics Research, OSA Technical Digest, Optical Society of America, Washington, DC, pp. 12-14, June, 2003.

 

615.   H. Yang, A. Khalili, M. Wistey, S. Bank, H. Yuen, J. Harris, D. Falquier, B. Moslehi, "Long wavelength GaInNAs(Sb) in-line fiber photodetector on GaAs," Proc. Conference on Lasers and Electro-Optics (CLEO 2003), Technical Digest (Optical Society of America), Baltimore, Maryland, CWA62 June 2003.

 

616.   E. Thrush, O.Levi, W. Ha, A. Kurtz, J. Hwang, W. E. Moerner, S. J. Smith, J. S. Harris, Jr.  "Integrated semiconductor fluorescence sensor for portable bio-medical diagnostics."  Proc. Conference on Lasers and Electro-Optics (CLEO 2003), Baltimore, MD, June 2003.

 

617.   X. Jiang, R. Wang, S. van Dijken, R. Shelby, R. Macfarlane, G. Solomon, J. Harris, and S. Parkin, "Optical Detection of Hot-Electron Spin Injection into GaAs from a Magnetic Tunnel Transistor Source", Phys. Rev. Lett. 90, 256603, 2003.

 

618.   X. Jiang, R. Wang, S. van Dijken, R. Shelby, R. Macfarlane, G. Solomon, J. Harris, and S. Parkin, "Optical Detection of Hot-Electron Spin Injection into GaAs from a Magnetic Tunnel Transistor Source", Virtual J. Nanoscale Science & Techn. 8 (1), July 2003.

 

619.   S. R. Bank, M.A. Wistey, H. B. Yuen, L.L. Goddard, J. S. Harris, “Low threshold, CW, room temperature 1.49 Ķm GaAs-based lasers,” Proc. IEEE International Symposium on Compound Semiconductors, 25-27 Aug. 2003, San Diego, CA, pp.74-5, September, 2003.

 

620.   E. Thrush, O. Levi, W. Ha, K. Wang, S. J. Smith and J. S. Harris, Jr.  "Integrated bio-fluorescence sensor," J. Chromatography A, 1013, pp. 103-110, September 2003.

 

621.   J. S. Harris, 1.3~1.55 Ķm GaInNAsSb lasers,” Acta Optica Sinica 23 (suppl., no.1), pp.313-14 Oct. 2003

 

622.   S. R. Bhalotra, H. L. Kung, J. Fu, N. C. Helman, O. Levi, D. A. B. Miller, J. S. Harris, Jr., "Standing-wave microspectrometer for multiple fluorescence detection," Proc.  7th International Conference on Miniaturized Chemical and BioChemical Analysis Systems, Squaw Valley, CA, October 2003, Paper 113.

 

623.   E. Thrush, O. Levi, W. Ha, G. Carey, L. J. Cook, J. Deich, S. J. Smith, W. E. Moerner and J. S. Harris, Jr.  "Laser Background Rejection Optimization in Integrated Optoelectronic Fluorescence Sensor."  Proc. of ĶTAS 2003, 1, pp. 363-366, October 2003.

 

624.   H. V. Demir, V. A. Sabnis, O. Fidaner, S. Latif, J. S. Harris, Jr., D. A. B. Miller, J.-F. Zheng, N. Li, T.-C. Wu, Y.-M. Houng, "Novel, optically-controlled optical switch based on intimate integration of a surface-normal photodiode and waveguide electroabsorption modulator for wavelength conversion,” Proc. IEEE Lasers and Electro-Optics Society 2003 Annual Meeting, Tucson, Arizona, Paper pp. 644-45, October 2003.

 

625.   S. Bank, M. Wistey, H. Yuen, L. Goddard, W. Ha, J.S. Harris Jr, "Low-threshold CW GaInNAsSb/GaAs laser at 1.49 um," Electron. Lett. 39, (20), pp. 1445-6, October 2003.

 

626.   T. Skauli, P. S. Kuo, K. L.Vodopyanov, T. J. Pinguet, O Levi, L. A. Eyres, J. S. Harris, M. M.Fejer, B. Gerard, L. Becouarn, “Improved dispersion relations for GaAs and applications to nonlinear optics,” J. Appl. Phys. 94 (10), pp. 6447-55, November, 2003

 

627.   R. Urata, Y. L. Nathawad, R. Takahashi, K. Ma, D. A. B. Miller, B. A. Wooley, J. S. Harris, “Photonic A/D conversion using low-temperature-grown GaAs MSM switches integrated with Si-CMOS,” IEEE J. Lightwave Techn. 21 (12), pp.3104-15, December, 2003

 

628.   M.A. Wistey, S.R. Bank, H.B. Yuen, L.L. Goddard, J. S. Harris, “Monolithic, GaInNAsSb VCSELs at 1.46 Ķm on GaAs by MBE,” Electron. Lett. 39, (25), pp. 1822-3, December 2003.

 

2004

 

629.   K. Ma, R. Urata, D. A. B. Miller, J. S. Harris, Jr., “Low temperature growth of GaAs on Si substrates for ultra-fast photoconductive switches,” Proc. Integration Heterogeneous Thin-Film Materials and Devices Symp., 23-24 April 2003, San Francisco, CA, USA; 768 pp.81-6, January 2004

 

630.   V. A. Sabnis, H. V. Demir, O. Fidaner, J. S. Harris, Jr., D. A. B. Miller, J.-F. Zheng, N. Li, T.-C. Wu, H.-T. Chen,  Y.-M. Houng, "Optically-controlled electroabsorption modulators for unconstrained wavelength conversion," Appl. Phys. Lett.  84 (4), pp. 469-471, January 2004.

 

631.   H. V. Demir, V. A. Sabnis, O. Fidaner, J. S. Harris, Jr., D. A. B. Miller, J.-F. Zheng, "Dual-diode quantum-well modulator for C-band wavelength conversion and broadcasting," OSA Optics Express, 12 (2), pp. 310-316, 26 January 2004.

 

632.   E. Thrush, O. Levi, L. J. Cook, J. Deich, S. J Smith, W. E. Moerner, J. S. Harris, Jr. “Laser background characterization in a monolithically integrated bio-fluorescence sensor,” Proc SPIE Advanced Biomedical and Clinical Diagnostic Systems II, 25-26 Jan. 2004, San Jose, CA, USA. 5318, no.1, p.59-65, January 2004

 

633.   A. Khalili, M. A. Wistey, J. S. Harris, Jr., “Side-coupled in-line fiber-semiconductor laser,” Proc SPIE – Photonics West 2004, 5355, pp.159-66, January 2004

 

634.   J.-F. Zheng, P. J. Hanberg, H. V. Demir, V. A. Sabnis, O. Fidaner, J. S. Harris, Jr., D. A. B. Miller, “Novel planarization and passivation in the integration of III-V semiconductor devices,” Proc SPIE – Photonics West 2004, 5356, pp. 81-91, January 2004

 

635.   S. E. Bisson, T. J. Kulp, O. Levi, J. Harris, Martin M. Fejer, “A broadly tunable high-resolution IR cavity ring-down spectrometer based on difference frequency generation in orientation-patterned GaAs,” Proc SPIE – Photonics West 2004, 5337, pp. 112-116, January 2004

 

636.   L. Scaccabarozzi, Z. Wang, X. Yu, W. T. Lau, M. F. Yanik, S. Fan, M. M. Fejer, J. S. Harris, Jr., “Tightly confining AlGaAs waveguides and microcavities for optical frequency conversion,” Proc SPIE – Photonics West 2004, 5355, pp. 111-119, January 2004

 

637.   S. M. Kim, Y. Wang, M. Keever, J. S. Harris, “High-frequency modulation characteristics of 1.3-Ķm InGaAs quantum dot lasers,” IEEE Photon. Technol. Lett. 16 (2), pp.377-379 February, 2004

 

638.   S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, J. S. Harris, Jr., “Progress towards high power 1.5 Ķm GaInNAsSb/GaAs lasers for Raman amplifiers,” Proc. Optical Fiber Communication Conference (OFC), 23-27 Feb. 2004, Los Angeles, CA, USA, vol. 2, p 3, February 2004

 

639.   H. V. Demir, V. A. Sabnis, O. Fidaner, J. S. Harris, Jr., D. A. B. Miller, J.-F. Zheng, N. Li, T.-C. Wu, Y.-M. Houng, “Novel scalable wavelength-converting crossbar,” Proc. Optical Fiber Communication Conference (OFC), 23-27 Feb. 2004, Los Angeles, CA, USA, vol. 2, p 3, February 2004

 

640.   V. A. Sabnis, H. V. Demir, M. B. Yairi, J. S. Harris, Jr., and D. A. B. Miller, "High-speed, optical switching based on diffusive conduction in an optical waveguide with surface-normal optical control," J. Appl Phys. 95 (5), pp. 2258-63, March, 2004.

 

641.   D. M. Zumbuhl, J. B. Miller, C. M. Marcus, V. I. Fal'ko, T. Jungwirth, J. S. Harris, “Orbital effects of in-plane magnetic fields probed by mesoscopic conductance fluctuations,” Phys. Rev. B 69 (12), pp.121305, March 2004

 

642.   M. Ramsteiner, D. S. Jiang, J. S. Harris, K. H. Ploog, “Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy,” Appl. Phys. Lett. 84 (11), pp.1859-61, March 2004

 

643.   D. Connelly, C. Faulkner, D. E. Grupp, J. S. Harris, “A new route to zero-barrier metal source/drain MOSFETs,” IEEE Trans. Nanotechnology 3 (1), pp.98-104, March 2004

 

644.   T. Gugov, M. Wistey, H. Yuen, S. Bank, J. S. Harris, Jr., “Structural characterization of molecular beam epitaxy grown GaInNAs and GaInNAsSb quantum wells by transmission electron microscopy,” Proc. New Materials for Microphotonics Conf., 13-15 April 2004, San Francisco, CA, USA, pp.267-72, April 2004

 

645.   K. Wang, H. Dai, T. Leng, N. Z. Mehenti, J. S. Harris, H. A. Fishman, “Fabrication and characterization of a carbon nanotube microelectrode array for retinal prostheses,” Investigative Ophthalmology & Visual Science 45, suppl.2, pp. U379, April 2004

 

646.   X.Yu, P.S. Kuo, K. Ma, O. Levi, M. M. Fejer and J. S. Harris, Jr. " Single-phase growth studies of GaP on Si by solid-source MBE". J. Vac. Sci. Technol. B, 22 (3), pp.1450-54, May, 2004

 

647.   J. X. Fu, S. R. Bank, M. A Wistey, H. B. Yuen, J. S. Harris, “Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 Ķm,” J. Vac. Sci. Technol. B, 22 (3), pp.1463-67, May, 2004

 

648.   M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, J. S. Harris, “GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.460 Ķm,” J. Vac. Sci. Technol. B, 22 (3), pp.1562-64, May, 2004

 

649.   T. Gugov, V. Gambin, M. Wistey, H. Yuen, S. Bank, J. S. Harris Jr., "The Use of Transmission Electron Microscopy (TEM) in the Characterization of GaInNAs(Sb) Quantum Well Structures Grown by MBE," J. Vac. Sci. Technol. B, 22 (3), pp.1588-92, May 2004.

 

650.   E. Thrush, O. Levi, W. Ha, G. Carey, L. J. Cook, J. Deich, S. J. Smith, W. E. Moerner, J. S. Harris, “Integrated semiconductor vertical-cavity surface-emitting lasers and PIN photodetectors for biomedical fluorescence sensing,” IEEE J Quantum Electron. 40 (5), pp.491-8, May 2004

 

651.   V. Lordi, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, “Electroabsorption of GaInNAs and GaInNAsSb quantum wells at 1300 and 1550 nm,” Proc. Conf. Lasers and Electro-Optics (CLEO), 16-21 May 2004, San Francisco, CA, USA vol. 2, p. 2

 

652.   E. Thrush, O. Levi, L. J. Cook, J. S. Harris, Jr., S. J Smith, J. Deich, W. E. Moerner, “Integrated semiconductor bio-fluorescence sensor integrated on micro-fluidic platform,” Proc. Conf: on Lasers and Electro-Optics (CLEO), 16-21 May 2004, San Francisco, CA, USA. vol. 2, p. 2

 

653.   H. Yang, V. Lordi, J. S. Harris, “GaNAs/GaAsSb type II active regions for 1.3-1.5 Ķm operation,” Proc. Conf: on Lasers and Electro-Optics (CLEO), 16-21 May 2004, San Francisco, CA, USA. vol. 1, p. 3

 

654.   M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, J. S. Harris, Jr., “GaInNAsSb/GaNAs VCSELs at 1.46 Ķm,” Proc. Conf: on Lasers and Electro-Optics (CLEO), 16-21 May 2004, San Francisco, CA, USA. vol. 1, p. 2

 

655.   K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M.Fejer, B. Gerard, L. Becouarn, E. Lallier, E., “Optical parametric oscillation in quasi-phase-matched GaAs,” Proc. Conf: on Lasers and Electro-Optics (CLEO), 16-21 May 2004, San Francisco, CA, USA. vol. 1, p. 3

 

656.   L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, J. S. Harris, Jr., “Measurements of intrinsic properties of high power CW single quantum well GaInNAsSb/GaAs lasers at 1.5 Ķm,” Proc. Conf. on Lasers and Electro-Optics (CLEO), 16-21 May 2004, San Francisco, CA, USA, vol. 1, p.3

 

657.   S. R. Bank, L. L. Goddard, M. A. Wistey, H. B. Yuen, J. S. Harris, Jr., “The temperature sensitivity of GaAs-based 1.5 Ķm GaInNAsSb lasers,” Proc. Conf. on Lasers and Electro-Optics (CLEO), 16-21 May 2004, San Francisco, CA, USA, vol. 1, p.4

 

658.   H. V. Demir, O. Fidaner, V. A. Sabnis, J. S. Harris, D. A. B. Miller, Jun-Fei Zheng, “Photodiode-driven quantum-well modulators for C-band wavelength conversion and broadcasting,” Proc. Conf on Lasers and Electro-Optics (CLEO), 16-21 May 2004, San Francisco, CA, USA, vol. 2, p.3

 

659.   C. C. Lin, J. X. Fu, J. S. Harris, “Widely tunable Al 2O3-GaAs DBR filters with variable tuning characteristics,” IEEE J. Selected Topics Quantum Electronics 10 (3), pp.614-21, May/June 2004

 

660.   S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, V. Lordi, J. S. Harris, “Low-threshold continuous-wave 1.5-Ķm GaInNAsSb lasers grown on GaAs,” IEEE J. Quantum Electron. 40 (6), pp.656-64, June 2004

 

661.   K. Ma, R. Urata, D. A. B. Miller, J. S. Harris, “Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches,” IEEE J. Quantum Electron. 40 (6), pp.800-5, June 2004

 

662.   S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, J. S. Harris, “The role and suppression of carrier leakage in 1.5 Ķm GaInNAsSb/GaAs lasers,” Device Research Conference - Conference Digest, 2004, pp.158-159, June 2004

 

663.   S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, J. S. Harris, Jr., “Low threshold, CW, room temperature 1.50 Ķm GaAs-based lasers,” Proc. 2003 International Symposium on Compound Semiconductors, Aug. 2003, San Diego, CA, USA, pp.180-4, August 2004

 

664.   E. Thrush, O. Levi, L. J. Cook, S. J. Smith, J. S. Harris, Jr., “Greater than 106 optical isolation in integrated optoelectronic fluorescence sensor,” Proc. 26th Annual International Conference Engineering in Medicine and Biology Society, 1-5 Sept. 2004, San Francisco, CA, USA, Vol. 3, pp. 2080-1

 

665.   K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M. Fejer, B. Gerard, L. B., E. Lallier, “Optical parametric oscillator based on microstructured GaAs,” Proc SPIE, 5620, pp. 63-69, August 2004

 

666.   T. F. Huang and J. S. Harris, Jr., “Growth of III-V Nitrides by Pulsed Laser Deposition” (Optoelectronic Properties of Semiconductors and Superlattices;  III-V Nitride Semiconductors: Growth and Substrate Issues." Volume 20: ed. by M. Omar Manasreh and Ian Ferguson, Gordon and Breach, 2004)

 

667.   V. Lordi, H. B. Yuen, S. R. Bank, J. S. Harris, “Quantum-confined Stark effect of GaInNAs(Sb) quantum wells at 1300-1600 nm,” Appl. Phys. Lett. 85 (6), pp.902-4 August, 2004

 

668.   K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M.Fejer, B. Gerard, L. Becouarn, E. Lallier, E., “Optical parametric oscillation in quasi-phase-matched GaAs,” Optics Lett. 29 (16) p p. 1912-14, August 2004.

 

669.   R. I. Aldaz, M. W. Wiemer, D. A. B. Miller, J. S. Harris, Jr., “Monolithically-integrated long vertical cavity surface emitting laser incorporating a concave micromirror on a glass substrate,” Optics Express 12 (17), pp. 3967-71, 23 August 2004

 

670.   J. S. Harris, Jr., “GaInNAs and GaInNAsSb Long Wavelength Lasers, Chapter 14, pp. 395-433 Physics and Applications of Dilute Nitrides: Ed. by I. Buyanova, Weimin Chen, (Taylor and Francis, London, U. K., 2004)

 

671.   S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, J. S. Harris, “High-performance 1.5 Ķm GalnNAsSb lasers grown on GaAs,” Electron. Lett. 40 (19), pp.1186-7, 16 September 2004

 

672.   J. S. Harris, Jr., “(GaIn)(NAsSb): the challenges for long wavelength communications devices,” Proc. Thirty-First International Symp. Compound Semiconductors, 12-16 Sept. 2004, Seoul, South Korea, pp.63-72, September, 2004

 

673.   E. Thrush, O. Levi, L. J. Cook, S. J. Smith, J. S. Harris, Jr., “Greater than 106 optical isolation in integrated optoelectronic fluorescence sensor,” Proc. 26th Annual International Conference IEEE Engineering in Medicine and Biology Society, 1-5 Sept. 2004, San Francisco, CA, USA; Vol.3, pp.2080-1, September 2004

 

674.   J. S. Harris, S. R. Bank, M. A. Wistey, H. B. Yuen, “GaInNAs(Sb) long wavelength communications lasers,” IEE Proc.-Optoelectronics 151 (5), pp.407-16, October 2004

 

675.   H. V. Demir, V. A. Sabnis, J.-F. Zheng, O. Fidaner, J. S. Harris, Jr., D. A. B.Miller, “Scalable wavelength-converting crossbar switches.,” IEEE Photon. Techn. Lett. 16 (10), pp. 2305-7, October, 2004

 

676.   K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, M. M. Fejer, B. Gerard, L. Becouarn, E. Lallier, “Optical parametric oscillator based on microstructured GaAs,” Proc. SPIE 5620, pp.63-69, October 2004

 

677.   S. M. Kim, J. S. Harris, “Multicolor InGaAs quantum-dot infrared photodetectors,” IEEE Photon. Technol. Lett. 16 (11) pp.2538-40, November 2004

 

678.   S. M. Kim, J. S. Harris, “Multispectral operation of self-assembled InGaAs quantum-dot infrared photodetectors,” Appl. Phys. Lett. 85 (18), pp.4154-56, November 2004

 

679.   D. Gollub, M. Kamp, A. Forchel, J. Seufert, S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, J. S. Harris, “Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 Ķm,” Electron. Lett. 40 (23), pp.1487-8, November 2004

 

680.   L. L. Goddard, S. R. Bank, M. S.  Wistey, H. B. Yuen, H. P. Bae, J. S. Harris, Jr., “Reduced mono-molecular recombination in GaInNAsSb/GaAs lasers at 1.5 Ķm,” Proc. 2004 IEEE LEOS Annual Meeting, 7-11 Nov. 2004, Rio Grande, Puerto Rico; Vol. 1 pp.144-5, November 2004

 

681.   S. Kim, J. S. Harris, “Multi-spectral operation of InGaAs quantum dot infrared photodetectors and infrared sensors applications,” Proc. 2004 IEEE LEOS Annual Meeting, 7-11 Nov. 2004, Rio Grande, Puerto Rico; Vol. 2 pp. 597-8, November 2004

 

682.   O. Fidaner, H. V. Demir, V. A. Sabnis, J. S. Harris, Jr., D. A. B. Miller, J.-F. Zheng, “Electrically-reconfigurable integrated photonic switches,” Proc. 2004 IEEE LEOS Annual Meeting, 7-11 Nov. 2004, Rio Grande, Puerto Rico; Vol. 2 pp. 455-6, November 2004

 

683.   R. I. Aldaz, M. W. Wiemer, D. A. B. Miller, J. S. Harris, Jr., “Monolithically integrated long vertical cavity surface laser incorporating a concave micromirror on a glass substrate,” Proc. 2004 IEEE LEOS Annual Meeting, 7-11 Nov. 2004, Rio Grande, Puerto Rico; Vol. 1 pp. 332-3, November 2004

 

684.   K. Ma, R. Chen, D. A. B. Miller, J. S. Harris, Jr., “Monolithic integration of GaAs devices with completely fabricated Si CMOS,” Proc. 2004 IEEE LEOS Annual Meeting, 7-11 Nov. 2004, Rio Grande, Puerto Rico; Vol. 1 pp. 230-1, November 2004

 

685.   R. Chen, D. A. B. Miller, K. Ma, J. S. Harris, Jr.,” Novel electrically controlled rapidly wavelength selective photodetection using MSMs,” Proc. 2004 IEEE LEOS Annual Meeting, 7-11 Nov. 2004, Rio Grande, Puerto Rico; Vol. 1 pp. p.306-7, November 2004

 

686.   H.B. Yuen, S.R. Bank, M.A. Wistey, J.S. Harris Jr., and A. Moto, "Comparison of GaNAsSb and GaNAs as Quantum Well Barriers for GaInNAsSb Optoelectronic Devices Operating at 1.3-1.55 Ķm," J. Appl. Phys. 96, (11), pp. 6375-81, December 2004

 

687.   J. S. Harris, Jr., H. Yuen, M. Wistey, S. Bank, V. Lordi, T. Gugov, H. Bae, L. Goddard “MBE Growth and Characterization of Long Wavelength Dilute Nitride III-V Alloys,” Ch. 17, pp. 502-578, Dilute Nitride Materials and Devices, Ed. by M. Henini, (Elsevier, Amsterdam, The Netherlands, 2004)

 

688.   J. S. Harris, Jr., M. Wistey, S. Bank, L. Goddard, V. Lordi, H. Bae, H. Yuen “Long-Wavelength Dilute Nitride-Antimonide Lasers,” Ch. 1, pp. 1-92, Dilute Nitride Materials and Devices, Ed. by M. Henini, (Elsevier, Amsterdam, The Netherlands, 2004)

 

2005

 

689.   K. Wang, H. Dai, H. A. Fishman, J. S. Harris, “Fabrication of a carbon nanotube protruding electrode array for a retinal prosthesis,” Proc. SPIE--Photonics West 2005, 5718, pp. 22-30, January, 2005

 

690.   F. Hatami, V. Lordi, J. S. Harris, W. T. Masselink, “Light-emitting diodes based on InP quantum dots in GaP(100),” Proc. SPIE--Photonics West 2005, 5739, pp. 86-92, January, 2005

 

691.   K. L. Vodopyanov, O. Levi, P. S. Kuo, T. J. Pinguet, J. S. Harris, Jr., M. M. Fejer, B. Gerard, L. Becouarn, E. Lallier,    “Optical parametric oscillator based on orientation-patterned GaAs,” Proc. SPIE--Photonics West 2005, 5728, pp. 129-135, January, 2005

 

692.   L. Scaccabarozzi, Z. Wang, X. Yu, M. M. Lee, W. T. Lau, M. F. Yanik, S. Fan, M. M. Fejer, J. S. Harris, Jr., “Fabrication and characterization of tightly confining AlGaAs waveguides and microcavities for nonlinear optical applications,” Proc. SPIE--Photonics West 2005, 5728, pp. 299-308, January, 2005

 

693.   L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, J. S. Harris, Jr., “High-performance GaInNAsSb/GaAs lasers at 1.5 Ķm,” Proc. SPIE--Photonics West 2005, 5738, pp. 180-191, January, 2005

 

694.   D. Jackrel, H. Yuen, S. Bank, M. Wistey, J. Fu, X. Yu, Z. Rao, J. S. Harris, “Thick lattice-matched GaInNAs films in photodetector applications,” Proc. SPIE--Photonics West 2005, 5726, pp. 27-34, January, 2005

 

695.   J.-X. Fu, J. S. Harris, Jr., “InP based double heterojunction phototransistor with graded emitter-base junction and base-collector junction,” Proc. SPIE--Photonics West 2005, 5726, pp. 19-26, January, 2005

 

696.   K. Wang, H. Dai, H. A. Fishman, J. S. Harris, “Fabrication of a carbon nanotube protruding electrode array for a retinal prosthesis,” Progress in Biomedical Optics and Imaging – Proc. SPIE; 2005, 5718, pp.22-29, January, 2005

 

697.   D. Jackrel, H. Yuen, J. Fu, S. Bank, X. Yu, Z. Rao, J. S. Harris, “MBE grown GaInNAs solar cells for multijunction applications,” Proc. Thirty-First IEEE Photovoltaic Specialists Conf., 3-7 Jan. 2005, Lake Buena Vista, FL, USA, pp.854-7, January, 2005

 

698.   K. Ioakeimidi, R. F. Leheny, S. Gradinaru, P. R. Bolton, R. Aldana, K. Ma, J. E. Clendenin, J. S. Harris, R. F. W. Pease, “Photoelectronic analog-to-digital conversion: Sampling and quantizing at 100 Gs/s,” IEEE Trans. Microwave Theory Techn. 53 (1), pp.336-42, January 2005

 

699.   R. Wang, X. Jiang, R. M. Shelby, R. M. Macfarlane, S. S. P. Parkin, S. R. Bank, J. S. Harris, “Increase in spin injection efficiency of a CoFe/MgO(100) tunnel spin injector with thermal annealing,” Appl. Phys. Lett. 86 (5), pp.052901-3, January, 2005

 

700.   H. V. Demir, V. A. Sabnis, O. Fidaner, J. F. Zheng, J. S. Harris, D. A. B. Miller, “Multifunctional integrated photonic switches,” IEEE J. Selected Topics in Quantum Electron. 11 (1), pp. 86-96, Jan.-Feb. 2005

 

701.   R. Chen, D. A. B. Miller, K. Ma, J. S. Harris, “Novel electrically controlled rapidly wavelength selective photodetection using MSMs,” IEEE J. Selected Topics in Quantum Electron. 11 (1), pp. 184-89, Jan.-Feb. 2005

 

702.   A. Ney, J. S. Harris, “Reconfigurable magnetologic computing using the spin flop switching of a magnetic random access memory cell,” Appl. Phys. Lett. 86 (1), pp.13502-1-3, January 2005

 

703.   J. S. Harris, Jr. “(GaIn)(NAsSb): the challenges for long wavelength communications devices,” Proceedings of the Thirty-First International Sympsosium on Compound Semiconductors, 12-16 Sept. 2004, Seoul, South Korea; pp. 63-72

 

704.   H. V. Demir, J. F. Zheng, V. A. Sabnis, O. Fidaner, J. Hanberg, J. S. Harris, D. A. B. Miller, “Self-aligning planarization and passivation for integration applications in III-V semiconductor devices,” IEEE Trans Semiconductor Manufacturing 18 (1) pp. 182-89 February 2005

 

705.   X. Jiang, R. Wang, R. M. Shelby, R. M. Macfarlane, S. R. Bank, J. S. Harris, S. S. P. Parkin, “Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100),” Phys. Rev. Lett. 94 (5), pp. 056601/1-4, February 2005

 

706.   R. Kudrawiec, P. Sitarek, J. Misiewicz, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, Jr., “Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance,” Appl. Phys. Lett. 86, pp. 091115-17 February 2005

 

707.   A. Ney, R. Rajaram, R. F. C. Farrow, J. S. Harris, S. S. P. Parkin, “Mn- and Cr-doped InN: A promising diluted magnetic semiconductor material,” J. Superconductivity 18 (1), pp. 41-4, February 2005

 

708.   R. Kudrawiec, K. Ryczko, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, Jr., “Band-gap discontinuity in GaN0.02As0.87Sb0.11/GaAs single-quantum wells investigated by photoreflectance spectroscopy,” Appl. Phys. Lett. 86, 141908-10 March 2005

 

709.   V. Lordi, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S.Harris, S. Friedrich, “Nearest-neighbor distributions in Ga(1-x)InxNyAs(1-y) and Ga(1-x)InxNyAs(1-y-z)Sbz thin films upon annealing,” Phys. Rev. B.71, (12) pp.125309-18, March 2005

 

710.   R. Kudrawiec, H. B. Yuen, K. Ryczko, J. Misiewicz, S. R. Bank, M. A. Wistey, H. P. Bae, J. S. Harris, Jr., “Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1.5 Ķm: The energy level structure and the Stokes shift,” J. Appl. Phys. 97, 053515, March 2005

 

711.   E. Thrush, O.Levi, L. J. Cook, J. Deich, A. Kurtz, S. J. Smith, W. E. Moerner, J. S. Harris, “Monolithically integrated semiconductor fluorescence sensor for microfluidic applications,” Sensors Actuators, B: Chemical 105 (2), pp.393-399, March 2005

 

712.    L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, Z. Rao, J. S. Harris, Jr., “Recombination, gain, band structure, efficiency, and reliability of 1.5 Ķm GaInNAsSb/GaAs lasers,” J. Appl. Phys. 97 (8), pp. 083101-16, 15 April 2005

 

713.   R. Kudrawiec, K. Ryczko, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, J. S. Harris, “Band-gap discontinuity in GaN0.02As0.87Sb0.11/GaAs single-quantum wells investigated by photoreflectance spectroscopy,” Appl. Phys. Lett. 86 (14), pp.141908-1-3, April 2005

 

714.   H.B. Yuen, R. Kudrawiec, K. Ryczko, S.R. Bank, M.A. Wistey, H.P. Bae, J. Misciewicz, and J.S. Harris Jr., “Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs Band Offsets,” Mater. Res. Soc. Symp. Proc. 864, pp. E.3.3.1-7, San Francisco, CA

 

715.   J. S. Harris, “The opportunities, successes and challenges for GaInNAsSb,” J. Crystal Growth 278 (1-4), pp. 3-17, May 2005

 

716.   M. A. Wistey, S. R. Bank, H. B. Yuen, H. P. Bae, J. S. Harris, “Nitrogen plasma optimization for high-quality dilute nitrides,” J. Crystal Growth 278 (1-4), pp. 229-233, May 2005

 

717.   H.B. Yuen, M.J. Seong, R. Kudrawiec, S. Yoon, S.R. Bank, M.A. Wistey, J. Misciewicz, and J.S. Harris Jr., “Improved Optical Quality from GaNAsSb in the Dilute Sb Limit,” J. Appl. Phys. 97 (11), pp. 113510-1-5, May 2005.

 

718.   M. A. Wistey, S. R. Bank, H. B. Yuen, J. S. Harris, M. M. Oye, A. L. Holmes, “Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy,” J. Vac. Sci. Techn. B 23 (3), pp. 460-4, May 2005

 

719.   S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, H. P. Bae, J. S. Harris, “Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1.5 Ķm,” J. Vac. Sci. Techn. B 23 (3), pp.1324-27, May 2005

 

720.   H. B. Yuen, M. A. Wistey, S. R. Bank, H. P. Bae, J. S. Harris, “Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy,” J. Vac. Sci. Techn. B 23 (3), pp.1328-32, May 2005

 

721.   M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, T. Gugov, J. S. Harris, “Protecting wafer surface during plasma ignition using an arsenic cap,” J. Vac. Sci. Techn. B 23 (3), pp. 1324-7, May-June 2005

 

722.   S. R. Bank, M. A. Wistey, H. B. Yuen, V. Lordi, V. Gambin, J. S. Harris, “Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs,” J. Vac. Sci. Techn. B 23 (3), pp. 1320-3, May-June 2005

 

723.   M. M. Oye, M. A. Wistey, J. M. Reifsnider, S. Agarwal, T. J. Mattord, S. Govindaraju, G. A. Hallock, A. L. Holmes, S. R. Bank, H. B. Yuen, J. S. Harris, “Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides,” Appl. Phys. Lett. 86 (22), pp.221902-1-3, 1 May 2005

 

724.   F. Hatami, V. Lordi, J. S. Harris, H. Kostial, W. T. Masselink, “Red light-emitting diodes based on InP/GaP quantum dots,” J. Appl. Phys. 97 (9), pp.96106-1-3, 1 May 2005

 

725.   L. Goddard, S. Bank, M. Wistey, H. Yuen, H. Bae, and J.S. Harris, "Differential Gain and Non-linear Gain Compression of GaInNAsSb/GaAs Lasers at 1.5Ķm," Proc. 24th Conf. Lasers and Electro Optics (CLEO), Baltimore, MD, vol. 1, pp.86-8, May 2005

 

726.   S. Bank, M. Wistey, L. Goddard, H. Yuen, H. Bae, and J.S. Harris, "1.55Ķm GaInNAsSb lasers on GaAs," Proc. 24th Conf. Lasers and Electro Optics (CLEO), Baltimore, MD, vol. 1, pp.89-91, May 2005.

 

727.   A. Khalili, J. S. Harris, Jr., “Highly stable in-line semiconductor fiber laser,” Proc. 24th Conf. Lasers and Electro Optics (CLEO), Baltimore, MD, vol. 1, pp. 538-40, May 2005.

 

728.   J. Fu, X. Yu, Y. H. Kuo, J. S. Harris, Jr., “Extended InGaAs/InGaAs quantum structures for near infrared photodetection beyond 1.9 Ķm,” Proc. 24th Conf. Lasers and Electro Optics (CLEO), Baltimore, MD, vol. 1, pp. 1266-67, May 2005

 

729.   H. Chin, U. Urata, R. Chen, D. A. B. Miller, Kai Ma, J. S. Harris, Jr., “Linear electro-optic conversion of sampled voltage signals using a low-temperature-grown GaAs MSM and a multiple quantum well modulator”, Proc. 24th Conf. Lasers and Electro Optics (CLEO), Baltimore, MD, vol. 3, pp. 1718-20, May 2005

 

730.   R. Chen, H. Chin, d. A. B. Miller, K. Ma, J. S. Harris, “MSM-based integrated CMOS wavelength-tunable optical receiver,” IEEE Photon. Techn. Lett. 17 (6), pp.1271-3, June 2005

 

731.   H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, M. J. Seong, S. Yoon, R. Kudrawiec, J. Misiewicz, “Improved optical quality of GaNAsSb in the dilute Sb limit,” J. Appl. Phys. 97 (11), pp.113510-1-5, 1 June 2005

 

732.   S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, J. S. Harris, “Effects of growth temperature on the structural and optical properties of 1.55 Ķm GaInNAsSb quantum wells grown on GaAs,” Appl. Phys. Lett. 87 (2), pp.21908-1-3, July 2005

 

733.   M. W. Wiemer, R. I. Aldaz, D. A. B. Miller, J. S. Harris, “A single transverse-mode monolithically integrated long vertical-cavity surface-emitting laser,” IEEE Photon. Techn. Lett. 17 (7), pp.1366-8, July 2005

 

734.   Q. Tang, T. I. Kamins, X. Liu, D. E. Grupp, J. S. Harris, “In situ p-n junctions and gated devices in titanium-silicide nucleated si nanowires,” Electrochem Solid-State Lett. 8 (8), pp. G204-8 August 2005

 

735.   X. Liu, Q. Tang, J. S. Harris, T. I. Kamins, “Arsenic surface segregation during in situ doped silicon and Si1-xGex molecular beam epitaxy,” J Crystal Growth 281 (1-4), pp. 334-343, August 2005

 

736.   D. M. Zumbuhl, J. B. Miller, C. M. Marcus, D. Goldhaber-Gordon, J. S. Harris, K. Campman, A. C. Gossard, “Conductance fluctuations and partially broken spin symmetries in quantum dots,” Phys. Rev. B 72 (8) p.081305, August 2005

 

737.   R. Kudrawiec, M. Motyka, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, J. S. Harris, “Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11/GaAs single quantum wells,” J. Appl. Phys. 98 (6), pp. 063527-31, Septemeber 2005

 

738.   A. Khalili, J. S. Harris, “Side-coupled fibre semiconductor laser,” Electron. Lett. 41 (20), pp. 1128-30, September 2005

 

739.   S. R. Bank, L. L. Goddard, M. A. Wistey, H. B. Yuen, J. S. Harris, “On the temperature sensitivity of 1.5-Ķm GaInNAsSb lasers. IEEE J. Select. Topics Quan. Electron. 11 (5) pp. 1089-98, September-October 2005

 

740.   R. Chen, J. X. Fu, D. A.B. Miller, J. S. Harris, “Spectral shaping of electrically controlled MSM-based tunable photodetectors,” IEEE Photon. Techn. Lett. 17 (10), pp. 2158-60, October 2005

 

741.   Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, J. S. Harris, “Strong quantum confined Stark effect in germanium quantum-well structures on silicon,” Nature 437,  pp. 1334-36, 27 October 2005.

 

742.   R. Rajaram, A. Ney, R. F. C. Farrow, G. Solomon, J. S. Harris, Jr., and S. S. P. Parkin
”Growth and magnetism of Cr-doped InN,” Appl.Phys. Lett. 87 (6), pp. 1725111-3, October 2005

 

743.   K. Ma, R. Chen, D. A. B. Miller, J. S. Harris, Jr., “Novel on-chip fully monolithic integration of GaAs devices with completely fabricated Si CMOS circuits,” IEEE J. Sel. Topics Quant. Electron. 11 (6) pp.1278-8, November-December 2005

 

744.   V. A. Sabnis, H. V. Demir, O. Fidaner, J. F. Zheng, J. S. Harris, D. A. B. Miller, N. Li, T. C. Wu, H. T. Chen, Y. M. Houng, “Intimate monolithic integration of chip-scale photonic circuits,” IEEE J. Sel. Topics Quant. Electron. 11 (6) pp.1255-65, November-December 2005

 

745.   X. Yu, L. Scaccabarozzi, J. S. Harris, P. S. Kuo, M. M. Fejer, “Efficient continuous wave second harmonic generation pumped at 1.55 Ķm in quasi-phase-matched AlGaAs waveguides,” Optics Express 13 (26), pp.10742-10753, 22 December 2005

 

746.   G. Salis, R. Wang, X. Jiang, R. M. Shelby, S. R. Bank, J. S. Harris, S. S. P. Parkin, “Temperature Independence of the Spin Injection Efficiency of a MgO-based Tunnel Spin Injector,” Appl. Phys. Lett. 87, 2625031-3, 26 December 2005

 

2006

 

747.   Z. Rao, J. A. Matteo, L. Hesselink, J. S. Harris, “A C-shaped nano-aperture vertical-cavity surface-emitting laser for high-density near-field optical data storage,” Proc. SPIE--Photonics West 2006, 6127, pp. 61320J-1-7 (2006)

 

748.   Y.-H. Kuo, D. A. B. Miller, J. S. Harris, “Germanium electroabsorption devices on silicon for optical interconnects,” Proc. SPIE--Photonics West 2006, 6125, pp. 78-86 (2006)

 

749.   O. Levi, W. Suh, M.M. Lee, J. Zhang, S.R.J. Brueck, S. Fan, J.S. Harris, “Integrated biomedical nanosensor using guided resonance in photonic crystal structures,” Nanobiophotonics and Biomedical Applications III, Proceedings of the SPIE, 6095, pp. 119-125, January 2006

 

750.   S. M. Kim, F. Hatami, A. W. Kurian, J. Ford, J. S. Harris, G. Scalari, M. Giovannini, N. Hoyler, J. Faist, G. S. Harris, “Bio-medical imaging with a terahertz quantum cascade laser,” Progress in Biomedical Optics and Imaging - Proceedings of SPIE 6095, January 2006

 

751.   J. X. Fu, X. Yu, B. Zhang, J. S. Harris, Jr.,  “Standing-wave Fourier transform interferometer with an HPT,” IEEE Photon. Techn. Lett. 18 (1), pp. 40-2, January 2006

 

752.   J. X. Fu, X. Yu, B. Zhang, J. S. Harris, Jr.,  “Compact standing-wave Fourier-transform interferometer with harmonic spectral analysis,” Progress Biomedical Optics Imaging, 7, (2) pp. 60791O1-11, January 2006

 

753.   P. S. Kuo, K. L. Vodopyanov, M. M. Fejer, D. M. Simanovskii, X. Yu, J. S. Harris, D. Bliss, D. Weyburne, “Optical parametric generation of a mid-infrared continuum in orientation-patterned GaAs,” Optics Lett. 31 (1), pp.71-3, 1 January 2006

 

754.   O. Fidaner, H. V. Demir, V. A. Sabnis, J. F.  Zheng, J. S. Harris, D. A. B. Miller, “Integrated photonic switches for nanosecond packet-switched optical wavelength conversion,” Optics Express 14 (1), pp.361-368, 9 January 2006

 

755.   H. Yang, V. Lordi, J. S. Harris, “Photoluminescence and electroabsorption in GaNAs/GaAsSb heterojunctions,” Electron. Lett. 42 (1) pp.52-4, 5 January 2006

 

756.   R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. Bae, J. S. Harris, “Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 Ķm,” Solid State Communic. 137 (1), pp. 138-141, January 2006

 

757.   R. Kudrawiec, M. Gladysiewicz, M. Motyka, J. Misiewicz, H.B. Yuen, S.R. Bank, M.A. Wistey, H.P. Bae, J.S. Harris Jr., “Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms”, Appl. Surf. Sci. 253, 152 January (2006).

 

758.   S. R. Bank, H. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, “Room-temperature continuous-wave 1.55 Ķm GaInNAsSb laser on GaAs,” Electron. Lett. 42 (3), pp.156-7, 2 February 2006

 

759.   F. Hatami, W. T. Masselink, V. Lordi, J. S. Harris, “Green emission from InP-GaP quantum-dot light-emitting diodes,” IEEE Photon. Techn. Lett. 18, pp. 895-897, March-April 2006

 

760.   M. A. Wistey, S. R. Bank, H. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, J. S. Harris, “GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm,” Electron. Lett. 42 (5), pp.282-3, 2 March 2006

 

761.   S. R. Bank, H. P. Bae, H. B. Yuen, L. L. Goddard, M. A. Wistey, T. Sarmiento, J. S. Harris, Jr., “Low-threshold CW 1.55- mu m GaAs-based lasers,” Proc. Optical Fiber Communication Conference, Anaheim, CA, 3p, March 2006

 

762.   J. S. Harris, “Dilute nitride lasers and photodetectors,” Proc. Optical Fiber Communication Conference, Anaheim, CA, 3p, March 2006

 

763.   S. M. Kim, F. Hatami, J. S. Harris, A. W. Kurian, J. Ford, D. King, G. Scalari, M. Giovannini, N. Hoyler, J. Faist, G. S. Harris, “Biomedical terahertz imaging with a quantum cascade laser,” Appl. Phys. Lett. 88 (15), pp. 1539031-3, 10 April 2006

 

764.   M. A. Wistey, S. R Bank, H. Bae, H. B. Yuen, L. L. Goddard, J. S. Harris, “Monolithic GaInNAsSb vertical cavity surface emitting lasers at 1534 nm”, Proc. Conference on Lasers and Electro-Optics, 21-26 May 2006, Long Beach, CA

 

765.   K. L. Vodopyanov, G.  Imeshev, M. E. Fermann, M. M. Fejer, X. Yu, A. C. Lin, J. S. Harris, “0.8-3.5 THz source based on fiber-laser pumped orientation-patterned GaAs”, Proc. Conference on Lasers and Electro-Optics, 21-26 May 2006, Long Beach, CA

 

766.   O. Levi, W. Suh, M. M. Lee, O. Solgaard, J. S. Harris,” Guided-resonance in photonic crystal slabs for biosensing applications”, Proc. Conference on Lasers and Electro-Optics, 21-26 May 2006, Long Beach, CA

 

767.   P. S. Kuo, K. L. Vodopyanov, M. M. Fejer, X. Yu, A. C. Lin, J. S. Harris, D. F. Bliss, C. L. Lynch, “GaAs optical parametric oscillator with a circularly polarized pump,” Proc. Conference on Lasers and Electro-Optics, 21-26 May 2006, Long Beach, CA, pp. 448-9

 

768.   K. L. Vodopyanov, J. E. Schaar, P. S. Kuo, M. M. Fejer, X. Yu, J. S. Harris, V. Kozlov, W. C. Hurlbut, Y. S. Lee, C. L. Lynch, D. F. Bliss, “New light from gallium arsenide: micro-structured GaAs for mid-IR and THz-wave generation,” Proc. Conference on Lasers and Electro-Optics, 21-26 May 2006, Long Beach, CA, pp. 446-7

 

769.   A. Ney, R. Rajaram, E. Arenholz, J. S. Harris, M. Samant, R. F. C. Farrow, S. S. P. Parkin, “Structural and magnetic properties of Cr and Mn doped InN, “ J. Mag. Magnetic Materials 300 (1), pp.7-11, May 2006

 

770.   H. B. Yuen, S. R. Bank, H. Bae, M. A. Wistey, J. S. Harris, “The role of antimony on properties of widely varying GaInNAsSb compositions,” J. Appl. Phys. 99, pp. 935041-8, 1 May 2006

 

771.   A. Ney, J. S.  Harris, S. S. P. Parkin, “Temperature dependent magnetic properties of the GaAs substrate of spin-LEDs,” J. Phys.: Con. Mat. 18 (17), pp. 4397-406, 3 May 2006

 

772.   G. Imeshev, M. E.  Fermann, K. L. Vodopyanov, M. M. Fejer, X. Yu, J. S. Harris, S. Bliss, C. Lynch, “High-power source of THz radiation based on orientation-patterned GaAs pumped by a fiber laser,” Optics Express 14, pp. 4439-444 May 2006

 

773.   S. R. Bank, H. B. Yuen, H. Bae, M. A. Wistey, J. S. Harris, “Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications,” Appl.Phys. Lett. 88, pp. 2211151-3, 29 May 2006

 

774.   H. B. Yuen, S. R. Bank, H. Bae, M. A. Wistey, J. S. Harris, “Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells,” Appl.Phys. Lett. 88, pp. 221913-1-3, 29 May 2006

 

775.   R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. Bae, M. A. Wistey, J. S. Harris,  “Band gap discontinuity in Ga0.9In0.1N0.027As0.973-xSbx/GaAs single quantum wells with 0≤x<0.06 studied by contactless electroreflectance spectroscopy,” Appl.Phys. Lett. 88, pp. 221113-1-3, 29 May 2006

 

776.   J. F. Zheng, H. V. Demir, V. A. Sabnis, O. Fidaner, J. S. Harris, D. A. B. Miller, “Self-aligned via and trench for metal contact in III-V semiconductor devices,” J. Vac. Sci. Technol. 24 (3), pp. 1117-122, May-June 2006

 

777.   A. J. Ptak, D. J. Friedman, S. Kurtz, R. C. Reedy, M. Young, D. B. Jackrel, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, “Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy,” J. Vac. Sci. Technol. 24 (3), pp. 1540-43, May-June 2006

 

778.   R. Rajaram, A. Ney, R. F. C. Farrow, S. S. P. Parkin, G. S. Solomon, J. S. Harris Jr., “Structural and magnetic behavior of transition metal doped InN grown by molecular beam epitaxy,” J. Vac. Sci. Techn. B 24 (3), pp.1644-8, May-June 2006

 

779.   D. B. Jackrel, A. J. Ptak, S. R. Bank, H. B. Yuen, M. A. Wistey, D. J. Friedman, S. R. Kurtz, J. S. Harris, Jr., “"GaInNAsSb Solar Cells Grown by Molecular Beam Epitaxy", Proc. 4th World Conference on Photovoltaic Energy Conversion, Waikoloa, Hawaii, pp. 783-786, May 7-12, 2006.

 

780.   J. S. Harris, Y.-H. Kuo, S. A. B. Miller, “Ge/SiGe quantum confined Stark effect modulators on silicon,”  Proc. Intern. SiGe Technology and Device Meeting, Princeton, NJ, p.28-9, May 2006

 

781.   Z. L. Rao, J. A. Matteo, L. Hesselink, J. S. Harris, “ A high-intensity nano-aperture vertical-cavity surface-emitting laser with controlled polarization”, 64th Device Research Conference Digest, pp. 125-126, June 2006

 

782.   S.R. Bank, H.P. Bae, L.L. Goddard, H.B. Yuen, M.A. Wistey, J.S. Harris, “Very Low-Threshold 1.55-μm Dilute-Nitride Lasers,” 64th Device Research Conference Digest, pp., June 2006

 

783.   Seth R. Bank, Homan B. Yuen, Hopil Bae, Mark A. Wistey, Akihiro Moto, James S. Harris, “Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes,” Appl. Phys. Lett. 88, pp. 241923-1-3, 12 June 2006

 

784.   R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. B. Yuen, M. A. Wistey, H Bae, J. S. Harris, “Interband transitions in GaN0.02As0.98-xSbx/GaAs (0 < x <= 0.11) single quantum wells studied by contactless electroreflectance spectroscopy,” Phys. Rev. B 73 (24), pp. 245413-18, June 2006

 

785.   A. Khalili, H. Bae, J. S. Harris, “An evanescent-coupling approach to making stable fiber-coupled semiconductor lasers,” Appl. Phys. Lett. 89 (4) pp. 041105-1-3, 24 July 2006

 

786.   F. Hatami, W. T. Masselink, J. S. Harris, “Colour-tunable light-emitting diodes based on InP/GaP nanostructures,” Nanotechnology 17 (15), pp. 3703-06, 14 August 2006

 

787.   H. V. Demir, F. H. Koklu, M. B. Yairi, J. S. Harris, D. A. B. Miller, “Optoelectronic switches based on diffusive conduction,” J. Appl. Phys. 100 (4), pp. 043107-1-8, 15 August 2006

 

788.   T. T. Lee, O. Levi, J. Cang, M. Kaneko, M. P. Stryker, S. J Smith, K. V. Shenoy, and J. S. Harris, “Integrated Semiconductor Optical Sensors for Chronic, Minimally-Invasive Imaging of Brain Function,” 28th Annual International Conference IEEE Engineering in Medicine and Biology Society –EMBC 2006. August 30 – September 3, 2006. New York, NY.

 

789.   F. Hatami, S. M. Kim, H. B. Yuen, J. S. Harris, “InSb and InSb:N multiple quantum dots,” Appl. Phys. Lett. 89 (13,) pp. 133115-1-3, 25 September 2006

 

790.   H. B. Yuen, S. M. Kim, F. Hatami, J. S. Harris, A. H. Chin, “Mid-infrared luminescence of an InNAsSb/InAs single quantum well grown by molecular beam epitaxy,” Appl. Phys. Lett. 89 (13), pp. 121912-1-3, 18 September 2006

 

791.   R. I. Aldaz, M. W. Wiemer, D. A. B. Miller, J. S. Harris, “Nonlinear optical effects in InxGa(1-x)As quantum systems for saturable absorbers,” Proc. IEEE 20th Inter. Semiconductor Laser Conf., Kohala Coast, HI, p.2, September 2006

 

792.   A. Khalili, H. Bae, J. S. Harris, “A highly stable evanescently-coupled fiber semiconductor laser,” Proc. IEEE 20th Inter. Semiconductor Laser Conf., Kohala Coast, HI, p.2, September 2006

 

793.   Ke Wang, Harvey A. Fishman, Hongjie Dai, James S. Harris, “Neural Stimulation with a Carbon Nanotube Microelectrode Array,” Nano Lett. 6 (9), pp. 2043-2048, September 2006

 

794.   A. Ney, R. Rajaram, J. S. Harris Jr., S. S. P. Parkin, “Dilute magnetic semiconductors based on InN,” Phase Transitions 79, (9-10), pp. 785-791, September-October, 2006

 

795.   K. L. Vodopyanov, M. M. Fejer, X. Yu, J. S. Harris, Y. S. Lee, W. C. Hurlbut, V. G. Kozlov, D. Bliss, C. Lynch, “Terahertz-wave generation in quasi-phase-matched GaAs,” Appl. Phys. Lett. 89 (14), pp.141119-1-3, 2 October, 2006

 

796.   N. Goel, P. Majhi, C. O. Chui, W. Tsai, D. Choi, J. S. Harris,” InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition,” Appl. Phys. Lett. 89 (14), pp.163517-1-3, 16 October, 2006

 

797.   R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S.R. Bank, M.A. Wistey, H. P. Bae, J.S. Harris, “Contactless electroreflectance spectroscopy of Ga(In)NAs/GaAs quantum well structures containing Sb atoms,” Appl. Surf. Sci. 253 (1), pp.152-7, 31 October 2006

 

798.   O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Scheavitz, Y-H. Kuo, K. C. Saraswat, J. S. Harris, D. A. B. Miller, “Optical link on silicon employing Ge/SiGe quantum well structures,” Proc.  LEOS 20th Annual Meeting, 21-25 Oct. 2007, Lake Buena Vista, FL, pp. 852-3, 2007

 

799.   K. L. Vodopyanov, J. Schaar, M. M. Fejer, X. Yu, J. S. Harris, Y. S. Lee, V. G. Kozlov, G. Imeshev, M. E. Ferman, D. Bliss, C. Lynch, “Tunable THz source based on frequency conversion in quasi-phase-matched GaAs,” Proc. SPIE  6386, pp.17-23, October 2006

 

800.   L. Scaccabarozzi, M. M. Fejer, Y. Huo, S. Fan, X. Yu, J. S. Harris, "Dichroic mirror embedded in a submicrometer waveguide for enhanced resonant nonlinear optical devices," Opt. Lett. 31, pp. 3285-3287, November 2006

 

801.   S. E. Bisson, T. J. Kulp, O. Levi, J. S. Harris, M. M. Fejer, “Long-wave IR chemical sensing based on difference frequency generation in orientation-patterned GaAs,” Appl. Phys. B-Lasers and Optics 85 (2-3), pp. 199-206, November 2006

 

802.   J. X. Fu, S. Souri, J. S. Harris, Jr., “Temperature and Humidity Dependent Reliability Analysis of RGB LED Chip”, Proc. ISTFA 2006: Discretes, Passives, MEMS, and Optoelectronics, pp. 137-141, November 2006

 

803.   J. S. Harris, “Ge/SiGe quantum-confined Stark modulators on silicon,” Proc. IEEE LEOS Annual Meeting Conference, Montreal, Que., Canada; p.2, November 2006

 

804.   S. M. Kim, F. Hatami, A. Gu, A. W. Kurian, J. Ford, J. S. Harris, G. Scalari, J. Faist, “Comparative analysis of bio-medical imaging at 3.7 terahertz with a high power quantum cascade laser,” Proc. IEEE LEOS Annual Meeting Conference, Montreal, Que., Canada; p.2, November 2006

 

805.   S. M. Kim, F. Hatami, H. B. Yuen, J. S. Harris, “Investigation of nitrogen induced closely coupled Sb based quantum dots for infrared sensors application,” MRS Symposium Proceedings, Boston MA 959, pp.106-111, December 2006

 

806.   Yu-Hsuan Kuo, Yong Kyu Lee, Yangsi Ge, Shen Ren, J. E. Roth, T. I. Kamins, D.A. B. Miller, J. S. Harris, Jr., “Quantum-confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators,” IEEE J. Select. Topics Quant. Electron. 12 (6 pt.2), pp.1503-13, November-December, 2006

 

807.   L. Scaccabarozzi, M. M. Fejer, Y. Huo, S. Fan, X. Yu, J. S. Harris, " Enhanced second-harmonic generation in AlGaAs/AlxOy tightly confining waveguides and resonant cavities," Opt. Lett. 31, pp. 3626-3628, December 2006

 

2007

 

808.   J. S. Harris, A. Gu, S. M. Kim,  “New THz sources for bio-medical imaging,” Proc. SPIE - Novel In-Plane Semiconductor Lasers VI 6485, San Jose, CA, Jan 22-25 2007

 

809.   R. Kudrawiec, H. B. Yuen, M. Motyka Gladysiewicz, M; Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris,  “Contactless electroreflectance of GaInNAsSb/GaAs single quantum wells with indium content of 8%-32%”, J. Appl. Phys. 101 (1) pp.103504-6, January, 2007

 

810.   O. Levi, M. M. Lee, J. Zhang, V. Lousse, S. J. Brueck, S. Fan, J. S. Harris, “Sensitivity analysis of a photonic crystal structure for index-of-refraction sensing,” Proc. SPIE 6447, January 2007

 

811.   K. L. Vodopyanov, J. E. Schaar, P. S. Kuo, M. M. Fejer, X. Yu, J. S. Harris, V. G. Kozlov, D. Bliss, C. Lynch, “Terahertz wave generation in orientation-patterned GaAs using resonantly enhanced scheme,” Proc. SPIE 6455, January 2007

 

812.   R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, J. Misiewicz, “Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance, Appl. Phys. Lett. 90 (6), pp. 061902-1-3, 5 February 2007

 

813.   R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, M. Gladysiewicz, J. Misiewicz, “Electromodulation spectroscopy of interband transitions in GaInNAsSb/GaAs quantum wells with high indium content,” Physica Status Solidi A 204 (2), pp. 364-72, February 2007

 

814.   R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, M. Gladysiewicz, J. Misiewicz, “The influence of antimony on the optical quality of highly strained GaInNAs/GaAs QWs investigated by contacless electroreflectance,” Physica Status Solidi A 204 (2), pp. 543-6, February 2007

 

815.   R. Kudrawiec, S. R. Bank, H. B. Yuen, H. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, J. Misiewicz, J., “Conduction band offset for Ga0.62In0.38NxAs0.991-xSb0.009/GaNyAs1-y/GaAs systems with the ground state transition at 1.5-1.65 Ķm,” Appl. Phys. Lett. 90 (13), pp.131905-1-3, 26 March 2007

 

816.   J. E. Roth, O. Fidaner, R. K. Schaevitz, Y. -H. Kuo, T. I. Kamins, J. S. Harris, and D. A. Miller, "Optical modulator on silicon employing germanium quantum wells," Optics Express 15, pp. 5851-5859, 30 April, 2007

 

817.   O. Levi, T. T. Lee, M. M. Lee, S. J. Smith, J. S. Harris, “Integrated semiconductor optical sensors for cellular and neural imaging,” Appl. Optics 46 (10), pp. 1881-1889, April 1 2007

 

818.   X. Yu, L. Scaccabarozzi, A. C. Lin, M. M. Fejer, J. S. Harris, “Growth of GaAs with orientation-patterned structures for nonlinear optics,” J. Crystal Growth 301-302, pp.163-7, April 2007

 

819.   D. Choi, M. Warusawithana, C. O. Chui, J. Chen, W. Tsai, D. G. Schlom, J. S. Harris, "The Electrical Characterization of Molecular-Beam-Deposited LaAlO3 on GaAs and its Annealing Effects," 2007 Materials Research Society (MRS) Symposium Proceedings, 996, 0996-H05-31, 2007

 

820.   Z. Rao, L. Hesselink, J. S. Harris, “High-intensity bowtie nano-aperture Vertical-Cavity Surface-Emitting Laser for ultrahigh-density near-field optical data storage,” Proc. SPIE, Optical Data Storage 2007 6620, Portland, OR, May 20-23 2007

 

821.   M. M. Oye, D. Shahrjerdi, I. Ok, J. B. Hurst, S. D. Lewis, S. Dey, D. Q. Kelly, S. Joshi, T. J. Mattord, X. Yu, M. A. Wistey, J. S. Harris, Jr., A. L. Holmes, Jr., J. C. Lee, S. K. Banerjee, “Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (~80 nm) Si1−xGex step-graded buffer layers for high-k III-V metal-oxide-semiconductor field effect transistor applications,” J. Vac. Sci. Techn. B 25 (3), pp. 1098-1102, May-June, 2007

 

822.   O. Levi, M. M. Lee, J. Zhang, V. Lousse, S. R. J. Brueck, S. Fan, J. S. Harris, “Optical characterization and sensitivity evaluation of guided-resonances in photonic crystal slabs for biosensing applications,” Proc. Conference on Lasers and Electro-Optics, 5-11 May 2007, Baltimore, MD, pp. 1692-3

 

823.   Z. L. Rao, J. A.  Matteo, L. Hesselink, J. S. Harris, “High-intensity C-shaped nanoaperture vertical-cavity surface-emitting laser with controlled polarization.” Appl. Phys. Lett. 90 (19), pp.191110-1-3, 7 May 2007

 

824.    D. B. Jackrel, S. R. Bank, H. B. Yuen, M. A. Wistey, J. S. Harris, “Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy,” J. Appl. Phys 101 (11) pp.114916/1-8, 1 June 2007

 

825.   H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R.  Pickett, M. A. Wistey, J. S. Harris, “Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers,” Appl. Phys. Lett. 90 (23), pp.231119/1-3, 4 June 2007

 

826.   D. Choi, J. S. Harris, M. Warusawithana, D. G. Schlom, “Annealing condition optimization and electrical characterization of amorphous LaAlO3/GaAs metal-oxide-semiconductor capacitors,” Appl. Phys. Lett. 90 (24), pp.243505/1-3, 11 June 2007

 

827.   J. S. Harris, “GaIn) (NAsSb): MBE growth, heterostructure and nanophotonic devices,” International J. Nanoscience 6 (3-4), pp.269-274, June/August 2007

 

828.   J. Pan­, S. Sandhu, Y. Huo, M. L. Povinelli, M. M. Fejer, S. Fan, and J. S. Harris, “Optical Analogue to Electromagnetically Induced Transparency in Photonic Crystals, Simulation and Experiments,” Technical Digest OSA 2007 Slow and Fast Light, SWB2 (2007), July, 2007

 

829.   Z. L. Rao, L. Hessek, J. S. Harris, “High-intensity bowtie-shaped nano-aperture vertical-cavity surface-emitting laser for near-field optics,” Optics Lett. 32 (14), pp.1995-7, 15 July 2007

 

830.   J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. Jackrel, E. R. Pickett, T. Sarmiento, l. L. Goddard, “Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications,” Physica Stat. Sol. B 244 (8), pp.2707-2729, August 2007

 

831.   J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. Jackrel, E. R. Pickett, T. Sarmiento, l. L. Goddard, “Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications,” Frontiers in Molecular-Beam Epitaxy toward Noverl Devices (Holger Grahn, Reinhold Koch, Achim Trampert, Ed., Wiley VCH, Berlin, Germany) 2007.

 

832.   H. Yang, A. Khalili, M. Wistey, J. S. Harris, “Evanescent-coupled GaInNAsSb in-line fibre photodetectors,” IET Optoelectronics 1 (4), pp.175-177, August 2007

 

833.   Z. L. Rao, L. Hesselink, J. S. Harris, “High transmission through ridge nano-apertures on vertical-cavity surface-emitting lasers,” Optics Express 15 (16), pp.10427-38 6 August 2007

 

834.   N. Goel, P. Majhi, W. Tsai, M. Warusawithana, D. G. Schlom, M. B. Santos, J. S. Harris, Y.Nishi, “High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric,” Appl. Phys. Lett. 91 (9), pp.093509/1-3, 27 August 2007

 

835.   T. O'Sullivan, A. Wechselberger, O. Levi, and J. Harris, "Compact Semiconductor Bioluminescence Bio-sensors," Technical Digest Frontiers in Optics, (Optical Society of America, 2007), paper JMD5

 

836.   A. Khalili, X. H. Lim, H. Bae, J. S. Harris, “A highly stable evanescently-coupled hybrid fibre semiconductor laser design”, Proc. 33rd European Conf. Opt. Comm. - ECOC 2007, 16-20 September 2007, Berlin, Germany, 2007

 

837.   P. S. Kuo, K. L. Vodopyanov, M. M. Fejer, X. Yu, J. S. Harris, D. F. Bliss, D. Weyburne, “GaAs optical parametric oscillator with circularly polarized and depolarized pump,” Optics Lett. 32 (18), pp.2735-2737, September, 15 2007

 

838.   S. R. Bank, H. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, R. Kudrawiec, J. S. Harris, “Recent progress on 1.55Ķm dilute-nitride lasers,” IEEE Quantum Electron. 43 (9-10) pp.773-785 September-October, 2007

 

839.   O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y-H. Kuo, K. C. Saraswat, J. S. Harris Jr., D. A. B. Miller, “Ge-SiGe quantum-well waveguide photodetectors on silicon for the near-infrared,” IEEE Photon. Techn. Lett 19 (20), p.1631-3, October. 2007

 

840.   M. M. Oye, T. J. Mattord, G. A. Hallock, S. R. Bank, M. A. Wistey, J. M. Reifsnider, A. J. Ptak, H. B. Yuen, J. S. Harris, A. L. Holmes, “Effects of different plasma species (atomic N, metastable N-2(*), and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy,” Appl. Phys. Lett. 91 (19), pp.191903-1-3, November 5 2007

 

2008

 

841.   J. Misiewicz, R. Kudrawiec, M. Gladysiewicz, J. S. Harris, “Electronmodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and Effective Mass Issues,” Dilute III-V Nitride Semiconductors and Materials Systems, ed. by A. Erol (Springer Series in Materials Science Vol. 105, Springer-Verlag, Berlin, Germany), pp. 163-179, 2008

 

842.   J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y. H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, D. A. B. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1V swing,” Electron. Lett. 44 (1), pp. 49-50, January, 2008

 

843.   J. E. Schaar, K. L. Vodopyanov, P. S. Kuo, M. M. Fejer, A. Lin, X. Yu, J. S. Harris, D. Bliss, C. Lynch, V. G. Kozlov, G. Vladimir, “Tunable narrow-bandwidth source of THz radiation based on frequency down-conversion in periodically structured gallium arsenide,” Proc. SPIE 6893, January, 2008

 

844.   M. Gobet, H. P. Bae, T. Sarmiento, J. S. Harris, “GaInNAsSb/GaAs vertical cavity surface-emitting lasers (VCSELs): Current challenges and techniques to realize multiple-wavelength laser arrays at 1.55Ķm,” Proc. SPIE 6908, January, 2008

 

845.   J. Pan, Y. Huo, K. Yamanaka, S. Sandhu, L. Scaccabarozzi, R. Timp, M. L. Povinelli, S. Fan, M. M. Fejer, J. S. Harris, "Aligning microcavity resonances in silicon photonic-crystal slabs using laser-pumped thermal tuning," Appl. Phys. Lett. 92, 103114-1-3, 10 March 2008

 

846.   J. Pan, Y. Huo, K. Yamanaka, S. Sandhu, L. Scaccabarozzi, R. Timp, M. L. Povinelli, S. Fan, M. M. Fejer, J. S. Harris, "Aligning microcavity resonances in silicon photonic-crystal slabs using laser-pumped thermal tuning," Virtual J. Nanoscale Sci. & Techn. http://www.vjnano.org, March 2008

 

847.   J. E. Schaar, K. L. Vodopyanov, P. S. Kuo, M. M. Fejer, X. Yu, A. Lin, J. S. Harris, D. Bliss, C. Lynch, V. G. Kozlov,  “Terahertz sources based on intracavity parametric down-conversion in quasi-phase-matched gallium arsenide Source,” IEEE J. Sel. Topics Quantum Electron. 14 (2), pp. 354-362, March/April 2008

 

848.   D. Choi; E. Kim, P. C. McIntyre, J. S. Harris, “Molecular-beam epitaxial growth of III-V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication,” Appl. Phys. Lett. 92 (20), pp.203502-1-3, 19 May 2008

 

849.   P. Ardalan, E. R. Pickett, J. S. Harris, A. F. Marshall, S. F. Bent, “Formation of an oxide-free Ge/TiO2 interface by atomic layer deposition on brominated Ge Source,” Appl. Phys. Lett. 92 (25), pp.252902-1-3, 23 June 2008

 

850.   B. Shin, D. Choi, J. S. Harris, P. C. Mclntyre, “Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators,” Appl. Phys. Lett. 93 (5), pp. 052911-1-3, 4 August 2008

 

851.   D. Choi, Y. Ge, J. Cagnon, S. Stemmer and J.S. Harris, “Low surface roughness and threading dislocation Ge growth on Si (001) substrate,” J. Crystal Growth. 310 4273–4279, August, 2008

 

852.   R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, J. Misiewicz, “On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%-32%,” J. Appl. Phys. 104 (3), pp. 033526-1-6, 1 August 2008

 

853.   Zhilong Rao, Sonny Vo, and James S. Harris "A review of progress on nano-aperture VCSEL "Chinese Optics Letters 6 (10), pp.748-754, October 2008 (Invited Paper)

 

854.   A. Khalili, X.H. Lim, H. Bae, J.S. Harris, “Analysis of Active Hybrid Fiber-Semiconductor Devices for Optical Networks,” IEEE J. Quantum Electron. 44 (11), pp.1042-1054, Nov 2008

 

855.   S. M. Kim, H. B. Yuen, F. Hatami, A. Chin, J. S. Harris, “Optical Properties of Dilute Nitride InN(As)Sb Quantum Wells and Quantum Dots Grown by Molecular Beam Epitaxy”, J. Electronic Matls. 37, (12), pp. 1774-79, December 2008

 

856.   L. Leem, J. S. Harris, “Magnetic Coupled Spin Torque Devices and Magnetic Ring Oscillators”, IEDM Tech. Dig, pp. 159-62, December 2008

 

857.   C. Lynch, D.F. Bliss, T. Zens, A. Lin, J.S. Harris, P.S. Kuo, M.M. Fejer, “Growth of mm-thick orientation-patterned GaAs for IR and THZ generation,” J. Crys. Growth 310 (24), pp.  5241-5247, December 2008

 

2009

 

858.   R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, J. S. Harris, Jr. “Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1.5–1.65 Ķm: Broadening of the fundamental transition”, Appl. Phys. Lett. 94 (3), pp. 031903-1/3, 24 January 2009

 

859.   T. D. O'Sullivan, E. Munro, A. de la Zerda, N. Parashurama, R. Teed, Z. Walls, O. Levi, S. S. Gambhir, J. S. Harris, “A Implantable optical biosensor for in vivo molecular imaging”, Optical Fibers and Sensors for Medical Diagnostics and Treatment Applications IX, Proc. SPIE 7173, San Jose, CA, January 26-29, 2009, pp. 717309-16, 2009

 

860.   D. Choi, J. Cagnon, E. Kim, S. Stemmer, P.C. McIntyre and J.S. Harris, “High quality III-V materials growth on Si (100) substrate via Ge buffer,” J. Crystal Growth, 311 pp. 1962-71, March 2009

 

861.   Larkhoon Leem, James S. Harris, “Magnetic coupled spin-torque devices for nonvolatile logic applications”, J. Appl. Phys. 105 (7), pp. 07D102-5, 1 April 2009

 

862.   T. O'Sullivan, E. A. Munro, C. Conca, N. Parashurama, A. De la Zerda, S. S. Gambhir, J. S. Harris, O. Levi, "Near-Infrared in vivo Fluorescence Sensor with Integrated Dielectric Emission Filter," Proc. of the Conference of Lasers and Electro-Optics (CLEO), Baltimore, MD, June 1-4, 2009, Paper JWA49, (2009).

 

863.   T. Sarmiento, H. P. Bae, T. O’Sullivan, and J. S. Harris, “1528 nm GaInNAsSb/GaAs vertical cavity surface emitting lasers”, Proc. of the Conference of Lasers and Electro-Optics (CLEO), Baltimore, MD, June 1-4, 2009, Paper CTuY4, (2009).

 

864.   J. Ferguson, P. Smowton, P. Blood, H. P. Bae, T. Sarmiento, and J. S. Harris, “Origin of non radiative recombination in GaInNAsSb/GaNAs quantum well lasers”, Conf. on Lasers and Electro Optics (CLEO), Baltimore, MD, June 1-4, 2009. Paper CTuY3 (2009).

 

865.   Y. Huo, H. Lin, Y. Rong, M. Makarova, T. I. Kamins, J. Vuckovic, and J. S. Harris, "Direct Band Gap Tensile-Strained Germanium," Proc. of the Conference of Lasers and Electro-Optics (CLEO), Baltimore, MD, June 1-4, 2009, Paper CPDB7, 2009.

 

866.   A. M. Mintairov, K. Sun, J. L. Merz, H. Yuen, S. Bank, M. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, J. Misiewicz, “Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells”, Semiconductor Sci. Techn. 24 (7) pp. 075013-1-6, July 2009

 

867.   D. Englund, B. Ellis, E. Edwards, T. Sarmiento, J. S. Harris, D. A. B. Miller, and J. Vuckovic, “Electrically controlled modulation in a photonic crystal nanocavity” Opt. Express 17, pp. 15409-15419, August 2009.

 

868.   T. Sarmiento, H. P. Bae, T. D. O'Sullivan, J. S. Harris, Jr., “GaAs-based 1.53 μm GaInNAsSb vertical cavity surface emitting lasers”, Elect. Lett. 45 (19), pp. 978-79, 10 September 2009

 

869.   G. S. Kanner, M. L. Marable, N. B. Singh, A. Berghmans, D. Kahler, B. Wagner, A. Lin, M. M. Fejer, J. S. Harris, K. L Schepler “Optical probes of orientation-patterned ZnSe quasi-phase-matched devices”, Optical Engineering 48 (11) pp. 114201-1-6 November 2009

 

870.   R. Chen, J. X. Fu, D. A. B. Miller, J. S. Harris, “Design and Analysis of CMOS-Controlled Tunable Photodetectors for Multiwavelength Discrimination”, J. Lightwave Techn. 27 (23) pp. 5451-5460, December 1, 2009

 

871.   J. W. Ferguson, P. M. Smowton, P. Blood, H. Bae, T. Sarmineto, J. S. Harris, Jr., “Nonradiative recombination in 1.56 Ķm GaInNAsSb/GaNAs quantum-well lasers”, Appl. Phys Lett. 95 (23) pp. 231104-1-3, December, 7 2009

 

2010

 

872.   J. Pan, S. Sandhu, Y. Huo, N. Stuhrmann, M. Povinelli, J. S. Harris, M. M. Fejer, S. Fan “Experimental demonstration of an all-optical analogue to the superradiance effect in an on-chip photonic crystal resonator system”, Phys. Rev. B 81 (4), 041101-1-3, January, 2010

 

873.   Y. Rong, Y. Ge, Y. Huo, M. Fiorentino, M. R. T. Tan, T. I. Kamins, T, J. Ochalski, G. Huyet, J. S. Harris Jr., “Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si”, IEEE J. Select. Topics Quan. Electron. 16 (1), pp. 85-92, January-February 2010

 

874.   R. Kudrawiec, T. Sarmiento, P. Poloczek, J. Misiewicz, James S. Harris, “Photoreflectance and photoluminescence study of GaInNAsSb layers lattice matched to InP”, J. Appl. Phys. 107, pp 043523-1-6, February 24, 2010

 

875.   N. B. Singh, G. S. Kanner, A. Berghmans, D. Kahler, A. Lin, B. Wagner, S. P. Kelley, D. J. Knuteson, R. Holmstrom, K. L. Schepler, R. Peterson, M. M. Fejer, J. S. Harris, “Characteristics of thick ZnSe films on quasi-phase-matched (QPM) GaAs substrates”, J. Crystal Growth 312 (8), pp. 1142-1145, April 1, 2010

 

876.   Larkhoon Leem, James S. Harris, Charles Rettner, Brian Hughes, Xin Jiang, See-Hun Yang, and Stuart Parkin, Fabrication of Prototype Magnetic Coupled Spin-torque Devices for Non-volatile Logic Applications,” Mater. Res. Soc. Symp. Proc. 1250, 5-9, April 2010

 

877.   Y. Y. Gong, B. Ellis, G. Shambat, T. Sarmiento, J. S. Harris, J. Vuckovic, “Nanobeam photonic crystal cavity quantum dot laser”, Optics Expr. 18 (9), pp. 8781-8789, April 26, 2010

 

878.   B. Ellis, T. Sarmiento, M. Mayer, B. Zhang, J. S. Harris, E. Haller, and J. Vuckovic, “Electrically pumped photonic crystal nanocavity light sources using a laterally doped p-i-n junction”, Appl. Phys. Lett. 96 (18), 181103-1-3, May 3, 2010.

 

879.   B. Ellis, T. Sarmiento, M. Mayer, P. Stone, J. Beeman, B. Zhang, O. Dubon, E. Haller, Y. Yamamoto, J. S. Harris, and J. Vuckovic, “Electrically pumped photonic crystal nanocavities using a laterally doped p-i-n junction”, Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2010. Paper CTuH3.

 

880.   B. Ellis, T. Sarmiento, J. S. Harris, and J. Vuckovic, “High efficiency solar cells based on spontaneous emission inhibition in photonic crystal”, Conf. on Lasers and Electro Optics (CLEO), Baltimore, MD, May 2009. Paper JThE90.

 

881.   T. O’Sullivan, E. A. Munro, N. Parashurama, C. Conca, S. S. Gambhir, J. S. Harris, and O. Levi, "Implantable semiconductor biosensor for continuous in vivo sensing of far-red fluorescent molecules," Optics Expr 18 (12), 12513-12525, June 7, 2010

 

882.   A. Gu Y. Huo, S. Hu, S. Thombare, E. Pickett, T. Sarmiento, D. Liang, S. Li, A. Lin, Z. Yu, J. Yan, M. Riazia, S. Fan, P. McIntyre, J.S. Harris, “Design and Growth of III-V Nanowire Solar Cell Arrays on Low Cost Substrates, 35th IEEE Photovoltaic Specialist Conference, Honolulu, HI, June 2010, pp. 2034-37

 

883.   E. Pickett, A. Gu, Y. Huo, E. Garnett, S. Hu, T. Sarmiento, S. Thombare, D. Liang, S. Li, Y. Cui, M. McGehee, P. McIntyre, J. Harris, “Faceting and Disorder in Nanowire Solar Cell Arrays, Proc. 35th IEEE Photovoltaic Specialist Conference, Honolulu, HI, June 2010, pp. 1848-53

 

884.   R. K. Schaevitz, J. E. Roth, E. H. Edwards, R. M. Audet, S. A. Claussen, E. Tasyurek, S. Ren, Y. Rong, J. S. Harris, and D. A. B. Miller, “Simple electroabsorption model for silicongermanium/germanium quantum well devices,” Proc. IEEE Photonics Soc. Summer Topical Meeting, 219-220, Playa del Carmen, July 19-21, 2010

 

885.   J. Pan, Y. Huo, S. Sandhu, N. Stuhrmann, M. Povinelli, J. Harris, M. Fejer, S. Fan, “Tuning the coherent interaction in an on-chip photonic-crystal waveguide-resonator system”, Appl. Phys. Lett. 97, (10) 101102-1-3, September 6, 2010

 

886.   Shen Ren, Yiwen Rong, Theodore I. Kamins, James S. Harris, and David A. B. Miller, “Integration of germanium quantum well structures on a silicon-on-insulator waveguide platform for optical modulator applications,” Proc. IEEE International Conference on Group IV Photonics (GFP), 60-62, Beijing, China, September 1-3, 2010

 

887.   R. K. Schaevitz, E. H. Edwards, R. M. Audet, Y. Rong, S. Ren, S. A. Claussen, E. Tasyurek, J. E. Roth, J. S. Harris, and D. A. B. Miller, “Simple electroabsorption model for germanium quantum well devices,” Proc. 2010 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 109-110, Atlanta, GA, USA, September 6-9, 2010

 

888.   D. Seo, S. Jeon, S. Seo, I. Song, C. Kim, S. Park, J. S. Harris, U.-In Chung, “Fully transparent InGaZnO thin film transistors using indium tin oxide/graphene multilayer as source/drain electrodes”,  Appl. Phys. Lett. 97 (11), 172106-1-3, October 25, 2010

 

889.   Seongjae Cho, Shinichi O’uchi, Kazuhiko Endo, Sang Wan Kim, Younghwan Son, In Man Kang, Meishoku Masahara, James S. Harris, Jr., Byung-Gook Park, “Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters”, J. Semiconductor. Sci. Techn. 10 (4), 265, December, 2010

 

890.   Seongjae Cho, Sukmo Koo, Kyungwan Yoo, Evan R. Pickett, Namkyoo Park, Theodore I. Kamins, Byung-Gook Park, James S. Harris, “Surface Roughness Effect on Q-Factor of Ge Whispering Gallery Mode Microdisk Resonator”, Proc. OSA Conf, 2010,  December 2010

 

2011

 

891.   Yijie Huo, Hai Lin, Robert Chen, Maria Makarova, Yiwen Rong, Mingyang Li, Theodore I. Kamins, Jelena Vuckovic, James S. Harris, “Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy”, Appl. Phys. Lett.  98 (1), 011111-1-3 January 3, 2011

 

892.   J. S. Harris, T. O.’Sullivan, T. Sarmiento, M. M. Lee, S. Vo, “Emerging applications for vertical cavity surface emitting lasers”, Semiconductor Science Techn. 26 (1), pp.  1-11, January, 2011

 

893.   James Loudin, Keith Mathieson, Ted Kamins, Lele Wang, Ludwig Galambos, Philip Huie, Alexander Sher, James Harris, and Daniel Palanker, “Photovoltaic retinal prosthesis,” Proc. SPIE 7885, 788513-1-13, January 2011

 

894.   A. C. Lin, M. M. Fejer, and J. S. Harris, Two-dimensional III-V nucleation on Si for nonlinear optics, J. Vac. Sci. Technol. B, 29 (3), 03C120-1-5, March 2011

 

895.   Dong Liang, Anjia Gu, Yijie Huo, Jingzhou Yan, Shuang Li, Erik Garnett, Evan Pickett, Yangsen Kang, Meiyueh Tan, Antonio Xavier Cerruto, Jia Zhu, Ching-Mei Hsu, Yan Yao, Majid Riaziat, Yi Cui, and James S. Harris, “A novel nano-structured GaAs solar cell,” Proc. American Physical Society March Meeting 56 (1), D36.00009, Dallas, Texas, USA, March 21-25, 2011

 

896.   Shen Ren, Yiwen Rong, Theodore I. Kamins, James S. Harris, and David A. B. Miller, “Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition,” Appl. Phys. Lett. 98 (15), 151108-1-3, April 13, 2011

 

897.   Yijie Huo, Sunil Sandhu, Jun Pan, Norbert Stuhrmann, Michelle Povinelli, Joseph M. Kahn, James S. Harris, Martin M. Fejer, Shanhui Fan, “Experimental demonstration of two methods for controlling the group delay in a system with photonic-crystal resonators coupled to a waveguide”, Opt. Lett. 36 (4), pp. 1482-1483, April 15, 2011

 

898.   Bryan Ellis, Marie A. Mayer, Gary Shambat, Tomas Sarmiento, James Harris, Eugene E. Haller, Jelena Vuckovic, “Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser”, Nature Photonics 5, pp. 297-300, May 2011.

 

899.   J. W. Ferguson, P. Blood, P. M. Smowton, H. Bae, T. Sarmiento, J. S. Harris, N. Tansu and L. J. Mawst, Optical gain in GaInNAs and GaInNAsSb quantum wells, IEEE J. Quantum Electron. 47 (6), 870-877, May 2011

 

900.   Hai Lin, Yijie Huo, Yiwen Rong, Robert Chen, Theodore I. Kamins, and James S. Harris, “X-ray diffraction analysis of step-graded InxGa1-xAs buffer layers grown by molecular beam epitaxy,” J. Crys. Growth 323 (1),17-20, May 15, 2011

 

901.   Seongjae Cho, Sukmo Koo, Kyungwan Yoo, Evan R. Pickett, Namkyoo Park, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, “Surface Roughness Effect on Q-Factor of Ge Whispering Gallery Mode Microdisk Resonator,” Proc. OSA Conf. 2010, Toronto, Canada, June 2011

 

902.   Hai Lin, Robert Chen, Yijie Huo, Theodore I. Kamins, and James S. Harris, “Raman study of strained Ge1-xSnx alloys,” Appl. Phys. Lett. 98 (26), 261917-1-3, June 30, 2011

 

903.   Yijie Huo, Hai Lin, Robert Chen, Yiwen Rong, Theodore I. Kamins and James S. Harris, “MBE growth of tensile-strained Ge quantum wells and quantum dots”, Front. Optoelectron. DOI 10.1007 /s12200-012-0193, 2011

 

904.   Seongjae Cho, Min-Chul Sun, Garam Kim, Byung-Gook Park, and James S. Harris, Design Optimization of Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) of Ge-AlxGa1-xAs System for High Performance Logic Technology, The 26th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC), 312-313, Gyeongju, Korea, June 19-22, 2011

 

905.   Seongjae Cho, Jae Sung Lee, In Man Kang, Byung-Gook Park, and James S. Harris, Small-Signal Modeling of Gate-All-Around (GAA) Junctionless MOSFETs for Sub-millimeter Wave Application, The 26th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC), 666-669, Gyeongju, Korea, June 19-22, 2011

 

906.   Seongjae Cho, Robert Chen, Hai Lin, Yijie Huo, Gary Shambat, Jelena Vučković, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, Fabrication and Characterization of Whispering Gallery Mode (WGM) Microdisk Resonator Based on Epitaxially Grown GeSn,Electronic Materials Conference (EMC) 2011, 85, Santa Barbara, CA, USA, Jun. 22-24, 2011

 

907.   Robert Chen, Yijie Huo, Hai Lin, Charles J. Hitzman, Theodore I. Kamins, and James S. Harris, Direct-Bandgap Photoluminescence of MBE-grown Ge1-xSnx Alloys, Electronic Materials Conference (EMC) 2011, Santa Barbara, CA, USA, Jun. 22-24, 2011

 

908.   Gary Shambat, Bryan Ellis, Jan Petykiewicz, Marie A. Mayer, Tomas Sarmiento, James Harris, Eugene E. Haller, Jelena Vuckovic, “Nanobeam photonic crystal cavity light-emitting diodes”, Appl. Phys. Lett. 99, pp. 071105-1-3, August 16, 2011.

 

909.   Tetsuzo Ueda, Masaaki Yuri, and James S. Harris, Jr., “Effects of Growth Temperatures on Crustal Quality of GaN by Vapor Phase Epitaxy Using GaCl3 and NH3,” Jpn. J. Appl. Phys. 50 (8), 085501-1-5, August 22, 2011

 

910.   Seongjae Cho, Min-Chul Sun, Garam Kim, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, Jr., Design Optimization of a Type-I Heterojunction Tunneling Field-Effect Transistor (I-HTFET) for High Performance Logic Technology, J. Semicond. Technol. Sci. 11 (3), 182-189, September 2011

 

911.   S. Ren, Y. Rong, S. A. Claussen, R. K. Schaevitz, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “A Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” Proc. IEEE Conference on International Group IV Photonics (GFP), 11-13, London, UK, September 14-16, 2011

 

912.   R. K. Schaevitz, E. H. Edwards, S. Ren, D.-S. Ly-Gagnon, R. M. Audet, Y. Rong, S. A. Claussen, E. Tasyurek, J. E. Roth, J. S. Harris and D. A. B. Miller, "Simple Electroabsorption Calculator for Germanium Quantum Well Devices," Proc. IEEE Conference on International Group IV Photonics (GFP), 11-13, London, UK, September 14-16, 2011

 

913.   E. H. Edwards, R. M. Audet, E. Fei, G. Shambat, R. K. Schaevitz, Y. Rong, S. A. Claussen, T. I. Kamins, J. Vuckovic, J. S. Harris, and D. A. B. Miller, “Ge quantum well resonator modulators,” Proc. IEEE Conference on International Group IV Photonics (GFP), 80-82, London, UK, September 14-16, 2011.

 

914.   Seongjae Cho, Robert Chen, Sukmo Koo, Gary Shambat, Hai Lin, Namkyoo Park, Jelena Vučković, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, Fabrication and Analysis of Epitaxially Grown Ge1-xSnx Microdisk Resonator with 20-nm Free Spectral Range, IEEE Photonics Technol. Lett. 23 (20), 1535-1537, October 15, 2011

 

915.   Robert Chen, Hai Lin, Yijie Huo, Chuck Hitzman, Theodore I. Kamins, and James S. Harris, “Increased photoluminescence of strain-reduced, high-Sn composition Ge1-xSnx alloys grown by molecular beam epitaxy,Appl. Phys. Lett. 99 (18), 181125-1-3, November 4, 2011

 

916.   K. H. Tan, S.Wicaksono, W. K. Loke, D. Li, S. F.Yoon, E. A. Fitzgerald, S. A. Ringel, J. S. Harris, “Molecular beam epitaxy grown GaNAsSb 1 eV photovoltaic cell”, J. Crystal Growth 335 (1) pp. 66-69, November 2011

 

917.   Gary Shambat, Bryan Ellis, Arka Majumdar, Jan Petykiewicz, Marie A. Mayer, Tomas Sarmiento, James Harris, Eugene E. Haller, Jelena Vuckovic, “Ultrafast direct modulation of a single-mode photonic crystal nanocavity light-emitting diode”, Nature Commun 5, pp. 539-42, November 2011

 

918.   G. Shambat, J Provine, K. Rivoire, T. Sarmiento, J. Harris, and J. Vuckovic, Optical fiber tips functionalized with semiconductor photonic crystal cavities, Appl. Phys. Lett. 99 (19), 191102-1-3, November 2011

 

919.   Seongjae Cho, Jae Sung Lee, Kyung Rok Kim, Byung-Gook Park, James S. Harris, Jr., and In Man Kang, Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors, IEEE Trans. Electron Devices 58 (12), 4164-4171, December 2011

 

920.   Seongjae Cho, Se Hwan Park, Byung-Gook Park, and James S. Harris, Silicon-Compatible Bulk-Type Compound Junctionless Field-Effect Transistor, IEEE International Semiconductor Device Research Symposium (ISDRS) 2011, WP1-05, University of Maryland, MD, USA, Dec. 7-9, 2011

 

921.   Suyog Gupta, Robert Chen, Blanka Magyari-Kope, Hai Lin, Bin Yang, Aneesh Nainan, Yoshio Nishi, James S. Harris, Krishna C. Saraswat, "GeSn technology: Extending the Ge electronics roadmap, IEEE International Electron Devices Meeting (IEDM) Tech. Digest, 16.6.1 - 16.6.4, December 2011

 

922.   Seongjae Cho, In Man Kang, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, Jr., Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation, Applied Phys. Lett. 99 (24), 243505-1-4, December 2011

 

2012

 

923.   Yijie Huo, Hai Lin, Robert Chen, Yiwen Rong, Theodore I. Kamins and James S. Harris, “MBE growth of tensile-strained Ge quantum wells and quantum dots,” Front. Optoelectron. Chin., DOI: 10.1007/s12200-012-0193-x, Online January 2012

 

924.   Peter G. Schunemann, Lee Mohnkern, Alice Vera, Xiaoping S. Yang, Angie C. Lin, James S Harris, Vladimir Tassev, and Michael Snure, “All-epitaxial Growth of Orientation-patterned Gallium Phosphide (OPGaP),” Tech. Dig. OSA Lasers, Sources, and Related Photonic Devices, ITh5B.5-1-3, February 1, 2012

 

925.   Seongjae Cho, Hyungjin Kim, Byung-Gook Park, and James S. Harris, Jr., Frequency Response of a Common-Source (CS) Amplifier Embedding Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor (TFET), 2012 International Conference on Electronics, Information and Communication (ICEIC), TA1, Jeongseon, Korea, February 1-3, 2012

 

926.   Seongjae Cho, Hyun Woo Kim, Byung-Gook Park, and James S. Harris, Jr. Design Consideration for Heterojunction P-Type Tunneling Field-Effect Transistor with Narrow-Bandgap Source Material, 2012 International Conference on Electronics, Information and Communication (ICEIC), TE3, Jeongseon, Korea, February 1-3, 2012

 

927.   Seongjae Cho, Hyungjin Kim, Min-Chul Sun, In Man Kang, Byung-Gook Park, and James S. Harris, Jr., “Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance”, IEICE Electronics Express 9 (9) pp. 828-833, February 2012

 

928.   Lele Wang, Keith Mathieson, Theodore I. Kamins, James Loudin, Ludwig Galambos, James S. Harris and Daniel Palanker, “Photovoltaic retinal prosthesis for restoring sight to the blind: implant design and fabrication,” Proc. SPIE 8248, DOI: 10.1117/12.909104, February 2012

 

929.   D. Liang, Y. Huo, Y. Kang, K. X. Wang, A. Gu, M. Tan, Z. Yu, S.Li, J. Jia, X. Bao, S. Wang, Y. Yao, S. Fan, Y. Cui, J. S.Harris, “GaAs Thin Film Nanostructure Arrays for III-V Solar Cell Applications”, Proceedings of SPIE 8269, 82692M, 2012.

 

930.   R. K. Schaevitz, E. H. Edwards, J. E. Roth, E. Fei, Y. Rong, P. Wahl, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Simple electroabsorption calculator for designing 1310nm and 1550nm modulators in germanium quantum wells,” IEEE J. Quantum Electron. 48 (2) February 2012

 

931.   Hai Lin, Robert Chen, Yijie Huo, Theodore I. Kamins, James S. Harris, “Low-temperature growth of Ge1−xSnx thin films with strain control by molecular beam epitaxy”, Thin Solid Films 520 (11), pp. 3927-3930, March 2012

 

932.   Hai Lin, Robert Chen, Weisheng Lu, Yijie Huo, Theodore I. Kamins, James S. Harris, “Investigation of the direct band gaps in Ge1-xSnx alloys with strain control by photoreflectance spectroscopy”, Appl. Phys. Lett. 100, 102109, March 2012

 

933.   James S. Harris, Hopil Bae and Tomás Sarmiento, “GaInNAs(Sb) Long-Wavelength VCSELs”,  Ch 11, VCSELs, Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers, ed. Rainer Michalzik (Springer-Verlag Berlin Heidelberg, March, 2012), pp 1-25

 

934.   James Harris,  The Role of Stanford University in Innovation in the Past Century and for the 21st Century”, Ch. 8, Entrepreneur Engineering: Innovation and Entrepreneourship, ed. K. Fukuda, H. Mizuno, G. Kano (Gentoshia Resistance, Osaka, Japan) March 2012

 

935.   Shen Ren, Yiwen Rong, S. A. Claussen, R. K. Schaevitz, T. I. Kamins, J. S. Harris, D. A. B. Miller, “Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides”, IEEE Photon. Techn. Lett. 24 (6), pp. 461-63, 15 March 2012

 

936.   Hai Lin, Robert Chen, Weisheng Lu, Yijie Huo, Theodore I. Kamins, James S. Harris, “Structural and optical characterization of SixGe1-x-ySny alloys grown by molecular beam epitaxy”, Appl. Phys. Lett. 100 (14) pp. 141908-1-3, April 2012

 

937.   Keith Mathieson, James Loudin, Georges Goetz, Philip Huie,   Lele Wang, Theodore I. Kamins, Ludwig Galambos, Richard Smith, James S. Harris, Alexander Sher, Daniel Palanker, “Photovoltaic retinal prosthesis with high pixel density,” Nature Photonics 6, pp. 391–397, May 2012

 

938.   Seongjae Cho, Hyungjin Kim, Min-Chul Sun, In Man Kang, Byung-Gook Park, and James S. Harris, Jr., “Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance”, IEICE Electronics Express 9 (9), pp. 828-833, May 2012

 

939.   Xiaochi Chen, Yijie Huo, Ed Fei, Gary Shambat, Xi Liu, Theodore Kamins, Jelena Vuckovic, James Harris, "Room Temperature Photoluminescence from Ge/SiGe Quantum Well Structure in Microdisk Resonator," Symposium on Photonics and Optoelectronics (SOPO), Shanghai, China, May 21-23 2012, pp.1-3, May 2012

 

940.   Edward T. Fei, Yijie Huo, Gary, Xiaochi Chen, Xi, Stephanie A. Claussen, Elizabeth H. Edwards, Theodore I. Kamins, David A. B. Miller1, Jelena Vuckovic, James S. Harris, “Light Emission in Ge Quantum Wells”, CLEO Technical Digest, CTu2J.1, May 2012

 

941.   Seongjae Cho, Hyungjin Kim, Min-Chul Sun, Theodore I. Kamins, Byung-Gook Park, and James S. Harris, Jr., Simulation Study on Process Conditions for High-Speed Silicon Photodetector and Quantum-Well Structuring for Increased Number of Wavelength Discriminations,” Proc. 2012 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, USA, June 10-11, 2012, P2-1, June 2012

 

942.   Jae Sung Lee, Seongjae Cho, Byung-Gook Park, James S. Harris, Jr., and In Man Kang, “Small-Signal Modeling of Gate-All-Around (GAA) Junctionless (JL) MOSFETs for Sub-Millimeter Wave Application,” J. Semiconductor Technol Science 12 (2), pp. 230-239, June 2012

 

943.   G. Shambat, S. R. Kothapalli, A. Khurana, J Provine, T. Sarmiento, K. Cheng, Z. Cheng, J. Harris, H. Daldrup-Link, S. S. Gambhir, and J. Vuckovic, “A photonic crystal cavity-optical fiber tip nanoparticle sensor for biomedical applications”, Appl. Phys. Lett. 100, 213702, June 2012.

 

944.   Seongjae Cho, Byung-Gook Park, Changjae Yang, Stanley Cheung, EuijoonYoon, Theodore I. Kamins, Ben S. J. Yoo, James S. Harris, Jr., “Room-temperature electroluminescence from germanium in an Al0.3Ga0.7As/Ge heterojunction light-emitting diode by Gamma-valley transport” Optics Express 20 (14), pp. 14921-14927, July 2012

 

945.   C. R. Phillips, J. Jiang, C. Mohr, A. C. Lin, C. Langrock, M. Snure, D. Bliss, M. Zhu, I. Hartl, J. S. Harris, M. E. Fermann, M. M. Fejer, “Widely tunable midinfrared difference frequency generation in orientation-patterned GaAs pumped with a femtosecond Tm-fiber system”, Optics Letters 37 (14) pp. 2928-2930, July 2012

 

946.   Kevin C.Y. Huang, Min-Kyo Seo, Yijie Huo, Tomas Sarmiento, James s. Harris, Mark L. Brongersma, “Antenna electrodes for controlling electroluminescence”, Nature Communic. 6, pp. 1005, August 2012

 

947.   V. Tassev, M. Snure, R. Peterson, R.  Bedford, D. Bliss, G. Bryant, M. Mann, W. Goodhue,S. Vangala, K. Termkoa, A. Lin, J. S. Harris, M. M. Fejer, C. Yapp, S. Tetlak, “Epitaxial growth of quasi-phase matched GaP for nonlinear applications: Systematic process improvements”, J. Crystal Growth 352 (1) pp. 72-77, August 2012

 

948.   E. T. Fei, E.T. Yijie Huo; Xiaochi Chen, G. Miller, Kai Zang, Y. Chen, Xi Liu; E. H. Edwards, D. A. B. Miller, R. Dutt, T. I. Kamins, J. S. Harris, "Temperature dependence of Ge quantum well light emitting diode on Si substrate," 2012 IEEE 9th International Conf. on Group IV Photonics (GFP), San Diego, CA, Aug. 29-31, 2012, pp.138-140, Aug. 2012

 

949.   Lele Wang, K. Mathieson, T. I. Kamins, J. D. Loudin, L. Galambos, G. Goetz, Y. Mandel, P. Huie, D. Lavinsky, J. S. Harris, D. V. Palanker, “Photovoltaic retinal prosthesis: implant fabrication and performance”, J. Neural Engineering 9 (4), August 2012

 

950.   Seongjae, Cho, Hyungjin Kim, Min-Chul Sun, Byung-Gook Park, James S. Harris, “Process Considerations for 80-GHz High-Performance p-i-n Silicon Photodetector for Optical Interconnect”, J. Semiconductor Techn. Science 12 (3), pp. 370-376   September 2012

 

951.   Xiaochi Chen, Yijie Huo, Edward T. Fei, Theodore I. Kamins, James. S. Harris, “A New Approach to Ge Lasers with Low Pump Power”, Proc. 25th IEEE Photonics Conference (IPC) Burlingame, CA September 23-27, 2012, pp. 60-61

 

952.   Hai Lin, Robert Chen, Weisheng Lu, Yijie Huo, Theodore I. Kamins, James S. Harris, “Optical properties of SixGe1-x-ySny heterostructures”, Proc. 25th IEEE Photonics Conference (IPC) Burlingame, CA September 23-27, 2012, pp. 919-920

 

953.   D. Liang, Y. Huo, Y. Kang, K. Wang, A. Gu, M. Tan, Z. Yu, S. Li, J. Jia, X. Bao, S. Wang, Y. Yao, H.-S. P. Wong, S. Fan, Y. Cui, J. S. Harris, “Optical absorption enhancement in freestanding GaAs thin film nanopyramid arrays”, Adv. Energy Matls. 2  (10), pp 1254-1260, October 2012

 

954.   S. A. Claussen, K. C. Balram, E. T. Fei, T. I. Kaminis, J. S. Harris, D. A. B. Miller, “Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications”, Optic. Materials Express 2 (10) pp.1336-1342, October 2012

 

955.   Natesh Parashurama, Thomas D. O’Sullivan, Adam De La Zerda, Pascale El Kalassi, Seongjae Cho, Hongguang Liu, Robert Teed, Hart Levy, Jarrett Rosenberg, Zhen Cheng, Ofer Levi, James S. Harris, Sanjiv S. Gambhir, “Continuous sensing of tumor-targeted molecular probes with a vertical cavity surface emitting laser-based biosensor”, J. Biomed. Optics 17 (11), 117004, November 2012

956.   Gary Shambat, Bryan Ellis, Jan Petykiewicz, Tomas Sarmiento, James S Harris, Jelena Vuckovic, “Electrically Driven Photonic Crystal Nanocavity Devices”, IEEE J. Select Top.  Quant. Electron. 18 (6), pp 1700-1710, November/December 2012

957.   Seongjae Cho, Stanley Cheung, Changjae Yang, Hyungjin Kim, Euijoon Yoon, S. J. Ben Yoo, Byung-Gook Park, and James S. Harris, Jr., “1550-nm Germanium Light-Emitting Diode by Momentum Conservation Transport,” Proc. 2012 International Symposium on Photonics and Electronics Convergence (ISPEC), Tokyo, Japan, Dec. 3-5, 2012, p. 98

958.   M. Baranowski, R. Kudrawiec, M. Latkowska, M. Syperek, J. Misiewicz, T. Sarmiento, J. S. Harris, “Monte Carlo Simulations of the Influence of Localization Centres on Carrier Dynamics in GaInNAs Quantum Wells”, Acta Physica Polonica A 122 (6) pp. 1022-1025   December 2012

959.   E. H. Edwards, R. M. Audet, E. T. Fei, S. A. Claussen, R. K. Schaevitz, E. Tasyurek, Y. Rong, T. I. Kaminis, J. S. Harris, D. A. B. Miller, “Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators”, Optics Express 20 (28) pp. 29164-29173, December 2012

2013

960.   Edwards, E. H., Lever, L., Fei, E. T., Kamins, T., I., Ikonic, Z., Harris, J. S., Kelsall, R. W. Miller, D. A. B., “Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon”, Optics Expr. 21 (1) pp. 867-876, January 2013

961.   Angie C. Lin, M. M. Fejer, James S. Harris, “Antiphase domain annihilation during growth of GaP on Si by molecular beam epitaxy”, J. Crystal Growth 363 pp. 258-263, January 2013

962.   Seongjae Cho, Sung Yun Woo, Hyungjin Kim, Jae Hwa Seo, Hwan Gi Lee, In Man Kang, Byung-Gook Park, and James S. Harris, Jr., Low-Standby Power and High-Performance InAs/InGaAs/InP heterojunction Tunneling Field-Effect Transistor, 2013 International Conference on Electronics, Information and Communication (ICEIC), pp. 284 285, Bali, Indonesia, Jan. 30--Feb. 2, 2013.

963.   Seongjae Cho, Pascale El Kallassi, Hyungjin Kim, Byung-Gook Park, James S. Harris, Jr., “In Vitro Optical Fiber Biosensor for Integrated Optical System,” 2013 International Conference on Electronics, Information and Communication (ICEIC), pp. 84 85, Bali, Indonesia, Jan. 30 Feb. 2, 2013.

964.   Seongjae Cho, Hyungjin Kim, Seonghyun Paik, In Man Kang, Jung-Hee Lee, Byung-Gook Park, and James S. Harris, Jr., “Germanium Waveguide for On-Chip Optical Interconnect,” 2013 International Conference on Electronics, Information and Communication (ICEIC), pp. 226 227, Bali, Indonesia, Jan. 30 Feb. 2, 2013.

965.   Seonghyun Paik, Seongjae Cho, Ken Leedle, Hyungjin Kim, Byung-Gook Park, and James S. Harris, “Design of High-Power Low-Noise 2-D Distributed Feedback Laser,” 2013 International Conference on Electronics, Information and Communication (ICEIC), pp. 288 289, Bali, Indonesia, Jan. 30 Feb. 2, 2013.

966.   Leedle, Kenneth; Janjua, Altamash; Paik, Seonghyun; et al. “Towards a Photonic Crystal Mode Locked Laser”, Semiconductor Lasers XII Location: San Francisco, CA, February 4-7, 2013 NOVEL IN PLANE SEMICONDUCTOR LASERS XII, Proceedings of SPIE 8640

967.   Seongjae Cho, Hyungjin Kim, S. J. Ben Yoo, Byung-Gook Park, and James S. Harris, Jr., “Design optimization of an optically drivable heterogeneous MOSFET with silicon compatibility,” 2013 SPIE Photonics West: Physics and Simulation of Optoelectronics Devices XXI, 8619-56, San Francisco, USA, Feb. 2 7, 2013.

968.   Mandel, Y., Goetz, G., Lavinsky, D., Huie, P. Mathieson, K., Wang, L. L., Kamins, T., Manivanh, R., Harris, J., Palanker, D., “In-vivo performance of photovoltaic subretinal prosthesis”, Proc. SPIE Ophthalmic Technologies XXIII 8567 p. 856709, 2013

969.   Robert Chen, Yi-Chiau Huang, Suyog Gupta, Angie C. Lin, Errol Sanchez, Yihwan Kim, Krishna C. Saraswat, Theodore I. Kamins, James S. Harris, “Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing”, J. Crystal Growth 365 pp. 29-34, February 2013

970.   Esfandyarpour, R., Esfandyarpour, H., Javanmard, M., Harris, J. S., Davis, R. W., “Microneedle biosensor: A method for direct label-free real time protein detection”, Sensors Actuators B-Chem.  177 p.p. 848-855, February 2013

971.   Gary Shambat, Sri-Rajasekhar Kothapalli, J Provine, Tomas Sarmiento, James Harris, Sanjiv Sam Gambhir, Jelena Vuckovic, “Single-Cell Photonic Nanocavity Probes”, NANO Lett.  , pp. , 13 February 2013

972.   M. Baranowski, R. Kudrawiec, M. Latkowska, M. Syperek, J. Misiewicz, T. Sarmiento, J. S. Harris, “Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well”, J. Phys. Cond. Matter 25 (6) February 2013

973.   Seongjae Cho, Hyungjin Kim, Min-Chul Sun, In Man Kang, Byung-Gook Park, and James S. Harris, Jr., “Mixed-Mode Simulation of Nanowire Ge/GaAs Heterojunction Tunneling Field-Effect Transistor for Circuit Applications,” IEEE J. Electron Devices Soc., 1 (2), pp. 48-53, February 2013.

974.   J.W. Schwede, T. Sarmiento, V.K. Narasimhan, S.J. Rosenthal, D.C. Riley, F. Schmitt, I. Bargatin, K. Sahasrabuddhe, R.T. Howe, J.S. Harris, N.A. Melosh, Z.-X. Shen, “Photon-enhanced thermionic emission from heterostructures with low interface recombination”, Nature Comm. 4, 12 March 2013

975.   V. Parameshwaran, X. Xu, Y. Kang, J. Harris, H.-S. P. Wong, B. Clemens, “Dilute phosphide nitride materials as photocathodes for electrochemical solar energy conversion,” Proc. SPIE 8620, p. 86201J, 2013.    

976.   Harrison, S. E., Li, S., Huo, Y., Zhou, B., Chen, Y. L., Harris, J. S., “Two-step growth of high quality Bi2Te3 thin films on Al2O3 (0001) by molecular beam epitaxy”, Appl. Phys. Lett. 102 (17) p.171906, April 2013

977.   Pavarelli, N., Ochalski, T. J., Murphy-Armando, F., Huo, Y., Schmidt, M., Huyet, G., Harris, J. S., “Optical Emission of a Strained Direct-Band-Gap Ge Quantum Well Embedded Inside InGaAs Alloy Layers”, Phys. Rev. Lett. 110 (17) p. 177404, April 2013

978.   Sukhdeo, David S.; Lin, Hai; Nam, Donguk; et al., “Approaches for a Viable Germanium Laser: Tensile Strain, GeSn Alloys, and n-Type Doping, Proc. IEEE Optical Interconnects Conf., May 5-8, 2013 pp. 112-113

979.   Mandel, Y., Goetz, G., Lavinsky, D., Huie, P. Mathieson, K., Wang, L. L., Kamins, T., Galambos, L., Manivanh, R., Harris, J., Palanker, D., “Cortical responses elicited by photovoltaic subretinal prostheses exhibit similarities to visually evoked potentials”, Nature Comm. 4 p. 1980, June 2013

980.   Li, S., Harrison, S. E., Huo, Y., Pushp, A., Yuan, H. T., Zhou, B., Kellock, A. J., Parkin, S. S. P., Chen, Y. L., Hesjedal, T., Harris, J. S., “Magnetic properties of gadolinium substituted Bi2Te3 thin films”, Appl. Phys. Lett. 102 (24) p. 242412, June 2013

981.   J. Sturm, K. Rim, J. S. Harris, C-C. Wu, “Electonic Materials”, Ch. 6, Guide to State-of-the-Art Electron Devices, ed. Joachim Burgholtz (IEEE Press, New York, NY) pp. 71-84, June 2013

982.   Seongjae Cho, Hyungjin Kim, Byung-Gook Park, and James S. Harris, Jr., “Optical and Electronic Devices for Monolithically Integrated Photonics Circuits, 2013 International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC), pp. 139--141, Yeosu, Korea, Jun. 30 Jul. 3, 2013.

983.   Seongjae Cho, Joonsuk Park, Hyungjin Kim, Robert Sinclair, Byung-Gook Park, and James S. Harris, Jr., “Silicon germanium waveguide for stronger optical confinement in integrated silicon photonics,” Photonics Nanostruct. Fundam. Appl., DOI: 10.1016/j.photonics.2013.07.012

984.   Esfandyarpour, R., Javanmard, M., Koochak, Z., Esfandyarpour, H., Harris, J. S., Davis, R. W., “Label-free electronic probing of nucleic acids and proteins at the nanoscale using the nanoneedle biosensor”, Biomicrofluidics 7 (4) p. 044114, July 2013

985.   Gupta, S., Chen, R., Huang, Y. C., Kim, Y., Sanchez, E., Harris, J. S. Saraswat, K. C., “Highly selective dry etching of Germanium over Germanium-Tin (Ge1-xSnx): A novel route for Ge1-xSnx nanostructure fabrication”, Nano Letters 13 (8) pp. 3783-3790, August 2013

986.   O'Sullivan, T.D., Heitz, R. T., Parashurama, N., Barkin, D. B., Wooley, B. A., Gambhir, S. S., Harris, J. S., Levi, O., “Real-time, continuous, fluorescence sensing in a freely-moving subject with an implanted hybrid VCSEL/CMOS biosensor”, Biomedical Optics Express 4 (8) pp. 1332-1341, August 2013

987.   Dutt, B., Lin, H., Sukhdeo, D. S., Vulovic, B. M., Gupta, S., Nam, D., Saraswat, K. C., Harris, J. S., “Theoretical analysis of GeSn alloys as a gain medium for a Si-compatible laser”, IEEE J. Select. Topics Quantum Electron. 19 (5) p. 1502706, September 2013

988.   Dong Liang, Yangsen Kang, Yijie Huo, Yusi Chen, Yi Cui, and James S. Harris High-Efficiency Nanostructured Window GaAs Solar Cells”, Nano Letters 13 (10), 4850-4856, September 2013

989.   Young Jun Yoon, Seongjae Cho, Jae Hwa Seo, Eou-Sik Cho, Shin-Won Kang, Jin-Hyuk Bae, Jung-Hee Lee, Byung-Gook Park, James S. Harris, Jr., and In Man Kang, “Design of AlGaAs/InGaAs Heterojunction Tunneling Field-Effect Transistor for Low-Standby-Power and High-Performance Application,” Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials (SSDM), pp. 178-9, Fukuoka, Japan, Sep. 24-27, 2013.

990.   Yijie Huo, Hai Lin, Robert Chen, Yiwen Rong, Theodore I. Kamins, James S. Harris, “MBE growth of tensile-strained Ge quantum wells and quantum dots”, Frontiers of Optoelectronics 5, October 2013

991.   L. F. Lastras-Martűnez, R. Herrera-Jasso, N. A. Ulloa-Castillo, R. E. Balderas-Navarro, A. Lastras-Martűnez, Angie C. Lin, M. M. Fejer, James S. Harris, Optical characterization of orientation-patterned GaP structures by micro reflectance difference spectroscopy”, J. Appl. Phys. 114, 173504 November 2013

992.   Seongjae Cho, In Man Kang, Kyung Rok Kim, Byung-Gook Park, and James S. Harris, Jr., “Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application,” Appl. Phys. Lett. 103 (22), pp. 222102-1-4, November, 2013.

993.   L. Gao, Y. Huo, J. S. Harris, Z. Zhou, “Ultra-compact and low-loss polarization rotator based on asymmetric hybrid plasmonic waveguide”, IEEE Photon. Techn. Lett. 25 (21) pp. 2081-2084, November 2013

994.   Seongjae Cho, In Man Kang, Kyung Rok Kim, Byung-Gook Park, and James S. Harris, Jr., “Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application,” Appl. Phys. Lett. 103 (22), pp. 222102-1-4, November 2013.

995.   Esfandyarpour, Rahim; Esfandyarpour, Hesaam; Harris, James S., Davis, Ronald W., “Simulation and fabrication of a new novel 3D injectable biosensor for high throughput genomics and proteomics in a labonachip device”, Nanotechnology 24 (46), p. 465301, November, 2013

996.   Seongjae Cho, Hyungjin Kim, Byung-Gook Park, and James S. Harris, Jr., “Si/Ge/AlGaAs heterojunction high hole mobility transistor,” The 8th International Conference on Advanced Materials and Devices (ICAMD), THU-NA-P21, Jeju, Korea, Dec. 11 – 13, 2013.

997.   Robert Chen, Yi-Chiau Huang, Suyog Gupta, Angie C. Lin, Errol Sanchez, Yihwan Kim, Krishna C. Saraswat, Theodore I. Kamins, James S. Harris, "Material Characterization of High-Sn Content, Compressively-Strained GeSn Epitaxial Films after Rapid Thermal Processing", J. Cryst. Growth 365, pp. 29-34 (2013)

998.   Suyog Gupta, Robert Chen, Yi-Chiau Huang, Yihwan Kim, Errol Sanchez, James S Harris, Krishna C Saraswat, "Highly Selective Dry Etching of Germanium over Germanium–Tin (Ge1–xSnx): A Novel Route for Ge1–xSnx Nanostructure Fabrication", Nano Lett. 13, pp. 3783-3790, December 2013

999.   Gupta, Suyog; Chen, Robert; Harris, James S, Saraswat, Krishna C., “Atomic layer deposition of Al2O3 on germaniumtin (GeSn) and impact of wet chemical surface pretreatment”, Appl. Phys. Lett. 103 (24), pp. 241601-3, December 2013

1000.     Audet, Ross M.; Edwards, Elizabeth H.; Balram, Krishna C. Stephanie A. Claussen, Rebecca K. Schaevitz, Emel Tasyurek, Yiwen Rong, Edward I. Fei, Theodore I. Kamins, James S. Harris, David A. B. Miller, “SurfaceNormal Ge/SiGe Asymmetric FabryPerot Optical Modulators Fabricated on Silicon Substrates”, J. Lightwave Techn. 31 (24), pp. 3995-4003

1001.     J-Y Jason Lin, Suyog Gupta, Yi-Chiau Huang, Yihwan Kim, Miao Jin, Errol Sanchez, Robert Chen, Krishna Balram, David Miller, James Harris, Krishna Saraswat, "Fabrication of GeSn-On-Insulator (GSOI) to enable monolithic 3D co-integration of logic and photonics", Symp. VLSI Technol., Dig. Tech., pp. 33-34 (2013)

1002.     Suyog Gupta, Robert Chen, Benjamin Vincent, Dennis Lin, Blanka Magyari-Kope, Matty Caymax, Johan Dekoster, James S Harris, Yoshio Nishi, Krishna C Saraswat, "(Invited) GeSn Channel n and p MOSFETs", ECS Trans. 50, pp. 937-941 (2013)

2014

1003.     Robert Chen, Suyog Gupta, Yi-Chiau Huang, Yijie Huo, Charles W Rudy, Errol Sanchez, Yihwan Kim, Ted Kamins, Krishna C Saraswat, James S. Harris, "Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling high-quality Ge (Sn) materials for micro and nanophotonics", Nano Lett. 14 (1), pp. 37-43, January 2014

1004.     Harrison, S. E.; Collins-McIntyre, L. J.; Li, S A. A. Baker, L. R. Shelford, Y. Huo, A. Pushp, S. S. P. Parkin, J. S. Harris, E. Arenholz, G. van der Laan, and T. Hesjedal “Study of Gd-doped Bi2Te3 thin films: Molecular beam epitaxy growth and magnetic properties”, J. Appl. Phys. 115 (2), pp. 023904-1-4, January 2014