425. E. H. Edwards, L. Lever, E. T. Fei, T. I. Kamins, Z. Ikonic, J. S. Harris, R. W. Kelsall, and D. A. B. Miller, "Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon," Opt. Express 21, 867-876 (2013)
We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vertically and butt-coupled Ge/SiGe devices, and show that this reduction in thickness is expected to lead to a significant improvement in the insertion loss of waveguide-integrated devices.
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