424. E. H. Edwards, R. M. Audet, E. T. Fei, S. A. Claussen, R. K. Schaevitz, E. Tasyurek, Y. Rong, T. I. Kamins, J. S. Harris, and D. A. B. Miller, "Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators," Opt. Express 20, 29164-29173 (2012)
We demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects. The devices operate via the quantum-confined Stark effect in Ge/SiGe quantum wells grown on silicon substrates by reduced pressure chemical vapor deposition. The strong electroabsorption contrast enables use of a moderate-Q asymmetric Fabry-Perot resonant cavity, formed using a film transfer process, which allows for operation over a wide optical bandwidth without thermal tuning. Extinction ratios of 3.4 dB and 2.5 dB are obtained for 3 V and 1.5 V drive swings, respectively, with insertion loss less than 4.5 dB. For 60 μm diameter devices, large signal modulation is demonstrated at 2 Gbps, and a 3 dB modulation bandwidth of 3.5 GHz is observed. These devices show promise for high-speed, low-energy operation given further miniaturization.
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