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406. S. Ren, Y. Rong, S. A. Claussen, R. K. Schaevitz, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated with SOI Waveguides, IEEE Photonics Technol. Lett. 24, 461 – 463 (2012)
We report a Ge/SiGe quantum well waveguide
electroabsorption modulator that is monolithically integrated
with silicon-on-insulator waveguides. The active quantum well
section is selectively grown on a silicon-on-insulator substrate
and has a footprint of 8 μm2. The integrated device demonstrates
more than 3.2-dB contrast ratio with 1-V direct voltage swing at
3.5 GHz. We also show the potential of this device to operate in
the telecommunication C-band at room temperature.
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