378. Hyun-Yong Yu, Donghyun Kim, Shen Ren, Masaharu Kobayashi, David A. B. Miller, Yoshio Nishi, and Krishna C. Saraswat, “Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si,” Applied Physics Letters 95, no. 16 (October 19, 2009): 161106-3, doi:10.1063/1.3254181
We demonstrate the effect of uniaxial tensile and compressive strain in Ge p-i-n photodiode integrated on Si using four-point bending structures. Responsivity at 1550 nm is increased from 0.67 to 0.75 A/W by tensile strain in the 110 direction while for compressive strain it decreases from 0.67 to 0.477 A/W. These uniaxial tensile and compressive strains also effectively result in shifts of the absorption spectra toward longer and shorter wavelength as they reduce or increase the direct bandgap energy of the Ge layer, respectively.
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