||367. D. A. B. Miller, R. K. Schaevitz, J. E. Roth, S. Ren, and O. Fidaner, “Ge Quantum Well Modulators on Si,” ECS Transactions, 16 (10) 851 – 856 (2008)
We discuss the physics and device structures of optical modulators
using germanium quantum wells grown on silicon substrates.
These exploit the recently discovered strong electroabsorption
mechanism in such wells, and promise high performance optical
modulators on silicon.
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