R. K. Schaevitz, J. E. Roth, S. Ren, O. Fidaner, and D. A. B. Miller, “Material Properties in Si-Ge/Ge Quantum Wells,” IEEE J. Sel. Top. Quantum Electron. 14, 1082-1089 (2008)
Germanium and silicon-germanium have the potential to integrate optics with silicon IC technology. The quantum-confined Stark effect (QCSE), a strong electro-absorption mechanism often observed in III-V quantum wells, has been demonstrated in Si-Ge/Ge quantum wells, allowing optoelectronic modulators in such Group IV materials. Here, based on photocurrent electro-absorption experiments on different samples and fitting of the resulting allowed and nominally forbidden transitions, we propose more accurate values for key parameters such as effective masses and band offsets that are required for device design. Tunneling resonance modeling including conduction band non-parabolicity was used to fit the results, with good consistency between the experiments and the fitted transitions.
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