||340. R. K. Schaevitz, J. E. Roth, O. Fidaner, and D. A. B. Miller, “Material properties in SiGe/Ge quantum wells,” OSA Annual Meeting “Frontiers in Optics” 2007, San Jose, CA, Sept. 2007, Paper FMC3
Photocurrent measurements in Ge quantum wells and quantum tunneling resonance
simulations give the first measurements of effective masses and other parameters for design of
high-performance SiGe/Ge quantum well optoelectronics on silicon.
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