Fidaner, A. K. Okyay, J. E. Roth, Y.-H. Kuo, K. C. Saraswat, J. S. Harris,
and D. A. B. Miller, "Waveguide electroabsorption modulator on Si
employing Ge/SiGe quantum wells," OSA Annual Meeting "Frontiers in Optics"
2007, San Jose, CA, Sept. 2007, Paper FMC2
We report the first waveguide optical modulator on Si that employs the
effect. For a 6 V swing, the contrast ratio is 7.72 dB at 1476 nm, and
exceeds 3 dB over 14 nm bandwidth.
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