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Publication # 326

Y.-H. Kuo, Y. Lee, S. Ren, Y. Ge, D. A. B. Miller, and J. S. Harris, "Quantum-confined Stark effect electroabsorption in Ge/SiGe quantum wells on silicon substrates," 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005, 23 27 October, 2005, Sydney, Australia, Paper TuM4

We observe strong electroabsorption in Ge quantum wells with SiGe barriers, grown on Si substrates, with performance comparable to III-V materials, and promising compact, low-power, high-speed modulators compatible with Si CMOS electronics.

 

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