Woodward, A. V. Krishnamoorthy, K. W. Goossen, J. A. Walker, A. L.
Lentine, R. A. Novotny, L. A. D'Asaro, L. M. F. Chirovsky, S. P. Hui, B.
Tseng, D. Kossives, D. Dahringer, R. E. Leibenguth, J. E. Cunningham,
W. Y. Jan, D. A. B. Miller, "15 μm solder bonding of GaAs/AlGaAs MQW
devices to MOSIS 0.8 μm CMOS for 1 Gb/s two-beam smart-pixel
receiver/transmitter," Solid-State Circuits Conference, 1996. Digest of
Technical Papers. 43rd ISSCC., 1996 IEEE International , 8-10 Feb. 1996,
pages 406 - 407, 482
A two-beam optical repeater
circuit operates to 1 Gb/s, consumes 10 mW, occupies about 1100 μm2,
and is realized with a technology capable of providing thousands of
optical inputs and outputs to foundry-grade VLSI silicon CMOS circuitry.
The technology provides this capability by attaching GaAs/AlGaAs
multiple-quantum-well (MQW) modulators and detectors to VLSI CMOS with
flip-chip solder bonding. The main unique features are summarized
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