Publication # 292

T. K. Woodward, A. V. Krishnamoorthy, K. W. Goossen, J. A. Walker, A. L. Lentine, R. A. Novotny, L. A. D'Asaro, L. M. F. Chirovsky, S. P. Hui, B. Tseng, D. Kossives, D. Dahringer, R. E. Leibenguth, J. E. Cunningham,  W. Y. Jan, D. A. B. Miller, "15 μm solder bonding of GaAs/AlGaAs MQW devices to MOSIS 0.8 μm CMOS for 1 Gb/s two-beam smart-pixel receiver/transmitter," Solid-State Circuits Conference, 1996. Digest of Technical Papers. 43rd ISSCC., 1996 IEEE International , 8-10 Feb. 1996, pages 406 - 407, 482

A two-beam optical repeater circuit operates to 1 Gb/s, consumes 10 mW, occupies about 1100 μm2, and is realized with a technology capable of providing thousands of optical inputs and outputs to foundry-grade VLSI silicon CMOS circuitry. The technology provides this capability by attaching GaAs/AlGaAs multiple-quantum-well (MQW) modulators and detectors to VLSI CMOS with flip-chip solder bonding. The main unique features are summarized

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