Publication # 178

A. V. Krishnamoorthy, T. K. Woodward, R. A. Novotny, K. W. Goossen, J. A. Walker, A. L. Lentine, L. A. D'Asaro, S. P. Hui, B. Tseng, R. Leibenguth, D. Kossives, D. Dahringer, L. M. F. Chirovsky, G. F. Aplin, R. G. Rozier, F. E. Kiamilev, D. A. B. Miller "Ring oscillators with optical and electrical readout based on hybrid GaAs MQW modulators bonded to 0.8 um silicon VLSI circuits" Electronics Letters, 31, 1917-1918 (1995).

Loaded and unloaded ring-oscillator circuits with an electrical and surface-normal 850 nm optical readout are fabricated using a hybrid 0.8 mu m silicon-CMOS/GaAs-AlGaAs MQW process. Measurements of the oscillation frequency of these circuits show total capacitance associated with the flip-chip-bonded optical MQW modulators as low as 52 fF

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