||A. V. Krishnamoorthy, T. K. Woodward, R. A. Novotny, K. W.
Goossen, J. A. Walker, A. L. Lentine, L. A. D'Asaro, S. P. Hui, B. Tseng, R. Leibenguth,
D. Kossives, D. Dahringer, L. M. F. Chirovsky, G. F. Aplin, R. G. Rozier, F. E. Kiamilev,
D. A. B. Miller "Ring oscillators with optical and electrical readout based on hybrid
GaAs MQW modulators bonded to 0.8 um silicon VLSI circuits" Electronics Letters,
31, 1917-1918 (1995).
Loaded and unloaded ring-oscillator circuits with an
electrical and surface-normal 850 nm optical readout are fabricated using a hybrid 0.8 mu
m silicon-CMOS/GaAs-AlGaAs MQW process. Measurements of the oscillation frequency of these
circuits show total capacitance associated with the flip-chip-bonded optical MQW
modulators as low as 52 fF
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