||A. V. Krishnamoorthy, A. L. Lentine, K. W. Goossen, J. A.
Walker, T. K. Woodward, J. E. Ford, G. F. Aplin, L. A. D'Asaro, S. P. Hui, B. Tseng, R.
Leibenguth, D. Kossives, D. Dahringer, L. M. F. Chirovsky, D. A. B. Miller,
"3-D integration of MQW modulators over active submicron CMOS circuits: 375 Mb/s
transimpedance receiver-transmitter circuit," IEEE Photonics Technology Letters, 7,
We accomplish the integration of GaAs-AlGaAs multiple quantum
well modulators directly on top of active silicon CMOS circuits. This enables
optoelectronic VLSI circuits to be achieved and also allows the design and optimization of
the CMOS circuits to proceed independently of the placement and the bonding of
surface-normal optical modulators to the circuit. Using this technique, we demonstrate
operation of a 0.8 micron CMOS transimpedance receiver-transmitter circuit at 375 Mb/s
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