||D. A. B. Miller "Comment on 'Optical
bistability in self-electro-optic effect devices with asymmetric quantum wells' and on
'Novel configuration of self-electro-optic effect device based on asymmetric quantum
wells', Applied Physics Letters 57, 1363-1365, (1990).
significant improvement in the optical switching times of symmetric self-electro-optic
effect devices due to enhanced tunneling by using a 35 A barrier versus the previous 60 A
barrier thick multiple quantum well GaAs/AlGaAs devices. Also, the voltage required for
bistability was reduced from 10 V in the thick barrier devices to 3 V in the thin barrier
devices with no apparent degradation in the contrast ratio.