||G. D. Boyd, A. M. Fox, and D. A. B. Miller
"33 ps optical switching of symmetric self-electro-optic effect devices" Applied
Physics Letters 57, 1843-1845, (1990).
We report significant improvement
in the optical switching times of symmetric self-electro-optic effect devices due to
enhanced tunneling by using a 35 A barrier versus the previous 60 A barrier thick multiple
quantum well GaAs/AlGaAs devices. Also, the voltage required for bistability was reduced
from 10 V in the thick barrier devices to 3 V in the thin barrier devices with no apparent
degradation in the contrast ratio.
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