||A. M. Fox, D. A. B. Miller, G. Livescu, J.
E. Cunningham, J. E. Henry, and W. Y. Jan "Exciton saturation in electrically biased
quantum wells," Applied Physics Letters, 57, 2315-2317, November 26, 1990.
authors have measured the heavy hole exciton saturation intensity in GaAs/AlGaAs quantum
wells as a function of applied electric field and AlGaAs barrier design. They find that
the saturation intensity increased with increasing applied field, and decreasing barrier
thickness or height, because of increased carrier sweep-out rates. Time-resolved sweep-out
time and temperature-dependent saturation intensity measurement point out the roles of
both thermionic emission and tunneling in the field and barrier-dependent carrier escape
time. By reducing the barrier Al composition from 30 to 20%, they achieved an increase in
the saturation intensity by a factor of approximately 6
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