Publication # 119

K. W. Goossen, G. D. Boyd, J. E. Cunningham, W. Y. Jan, D. A. B. Miller, D. S. Chemla, R. M. Lum, "GaAs-AlGaAs Multiquantum Well Reflection Modulators Grown on GaAs and Silicon Substrates" IEEE Photonics Tech. Lett., 1, 304-306, (1989).

Measurements of GaAs-AlGaAs multiple-quantum-well (MQW) reflection modulators grown simultaneously on GaAs and silicon substrates are presented. Comparable electroabsorption is observed, with contrast ratios of about 4:1 for both modulators at 20 V. The absorption spectrum of the GaAs-on-Si quantum well shows a single exciton peak, which leads to certain improvements in modulator performance. This study is very encouraging for the growth of GaAs MQW modulators on silicon integrated circuit chips for off-chip communication

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