||K. W. Goossen, G. D. Boyd, J. E. Cunningham, W. Y. Jan,
D. A. B. Miller, D. S. Chemla, R. M. Lum, "GaAs-AlGaAs Multiquantum
Well Reflection Modulators Grown on GaAs and Silicon Substrates" IEEE Photonics Tech.
Lett., 1, 304-306, (1989).
Measurements of GaAs-AlGaAs
multiple-quantum-well (MQW) reflection modulators grown simultaneously on GaAs and silicon
substrates are presented. Comparable electroabsorption is observed, with contrast ratios
of about 4:1 for both modulators at 20 V. The absorption spectrum of the GaAs-on-Si
quantum well shows a single exciton peak, which leads to certain improvements in modulator
performance. This study is very encouraging for the growth of GaAs MQW modulators on
silicon integrated circuit chips for off-chip communication
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