||G. Livescu, A. M. Fox, D. A. B. Miller, T.
Sizer, and W. H. Knox, "Resonantly Enhanced Electron Tunneling Rates in Quantum
Wells," Phys. Rev. Lett., 63, 438-441, (1989).
Resonant tunneling of
electrons in GaAs/AlGaAs quantum wells is resolved by picosecond pump-and-probe
electroabsorption measurements. The temperature-independent tunneling escape times are
dramatically affected by the applied electric field, with a pronounced minimum at the
field corresponding to the resonance between the n=1 electron level in one quantum well,
and the n=2 electron level in the adjacent one. The calculated field dependence of the
tunneling times is in qualitative agreement with the data
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