||G. Livescu, D. A. B. Miller, T. Sizer, D. J.
Burrows, J. Cunningham, A. C. Gossard, and J. H. English, "High-speed absorption
recovery in quantum well diodes by diffusive electrical conduction," Appl. Phys.
Lett., 54, 748-750, (1989).
The authors present here picosecond
time-resolved electroabsorption measurements in GaAs quantum well p-i-n diode structures.
While the dynamics of the vertical transport is not completely understood at present,
their data reveal the importance of the 'lateral' propagation of the photoexcited voltage
pulse over the area of the doped regions. They propose a two-dimensional 'diffusive
conduction' mechanism, which predicts a fast relaxation of the electrical pulse, with time
constants ranging from 50 fs to 500 ps, determined by the size of the exciting spot, the
resistivity of the doped regions, and the capacitance of the intrinsic region
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