||I. Bar-Joseph, G. Sucha, D. A. B. Miller, D.
S. Chemla, B. I. Miller and U. Koren "Self-electrooptic effect device and modulation
converter with InGaAs/InP multiple quantum wells," Appl. Phys. Lett., 52,
The authors report the first observation of the self-electro-optic
effect in InGaAs/InP multiple quantum wells, grown by organometallic vapor phase epitaxy.
Clear bistability and switching are observed over a range of 40 nm around 1.61 mu m with
20-30 V bias. The authors demonstrate the operation of a modulation convertor, which
converts a modulation from a carrier at 1.6 mu m onto a carrier at 0.85 mu m and vice
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