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D. S. Chemla, I. Bar-Joseph, C. Klingshirn,
D. A. B. Miller, J. M. Kuo, and T. Y. Chang, "Optical Reading of
Field-Effect Transistors by Phase-Space Absorption Quenching in a Single InGaAs Quantum
Well Conducting Channel," Appl. Phys. Lett. 50, 585-587, (1987). The
authors present the first observation of absorption quenching by electrical control of the
carrier density in a single semiconductor quantum well used as conducting channel in a
field-effect transistor. The effect is large enough to allow direct reading of the
transistor logic state
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