Publication # 053

T. H. Wood, C. A. Burrus, D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard and W. Wiegmann, "Enhanced Electro-Absorption in GaAs/GaAlAs Multiple Quantum Wells and its Application to Opto-Electronic Devices," Inst. Phys. Conf. Ser. No. 74; Chapter 9 Proceedings of the International Symposium on GaAs and Related Compounds, Biarritz, 1984, 687-688.

An enhanced electroabsorption effect has been observed in multiple quantum wells (MQW) of GaAs/GaAlAs. Recent calculations indicate that the effect arises from a large change in the confinement energies of the electrons and holes in the wells with the application of an electric field perpendicular to the layers. Excellent fits to the measured energy shifts can be achieved with no adjustable parameters. This effect is used to make an optical modulator that has low insertion loss and high speed. Optical pulses 131 ps long have been generated from 121 ps electrical pulses.

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