||D. A. B. Miller, C. T. Seaton and S. D.
Smith, "Optical Bistability and Transphasor Action in Semiconductors," Proc.
SPIE 236, 435-440 (1980), (Proc. Soc. Photo-Opt. Instr. Eng.).
the realisation of optically bistable switching and memory elements, and the transphasor
(an all-optical transistor) in simple one element noninear Fabry-Perot interferometers
made from the semiconductor InSb. These devices, which operate at 5 K and 77 K with mW
powers from a cw CO laser between 5 and 6 um rely on a strongly intensity-dependent
refractive index discovered near the bandgap region of InSb and explained by bandgap
resonant saturation. Switching speeds are shown to be , 500 ns in these first devices and
operation to much shorter timescales is predicted. Operation at room temperature and in
other semiconductors at other wavelengths remains a powwibility and such devices offer
considerable potential for all-optical switching in integrated optics and laser pulse