||D. S. Chemla, T. C. Damen, D. A. B. Miller,
A. C. Gossard, and W. Wiegmann, "Electroabsorption by Stark Effect on
Room-Temperature Excitons in GaAs/GaAlAs Multiple Quantum Well Structures," Appl.
Phys. Lett. 42, 864-866 (1983).
The authors report the first observation
of electroabsorption in GaAs/GaAsAs multiple quantum well structures. They have been able
to induce Stark shifts for room-temperature excitation resonances of approximately 10 meV
for applied field approximately 1.6*10/sup 4/ V/cm in a sample with 96-AA GaAs layers,
giving large changes in optical absorption (e.g., a factor of 5 or approximately 4*10/sup
3/ cm/sup -1/ increase). This should permit optical modulators with micron path lengths
and potentially very fast operation
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