||D. A. B. Miller, D. S. Chemla, P. W. Smith,
A. C. Gossard and W. T. Tsang, "Room-Temperature Saturation Characteristics of
GaAs-GaAlAs Multiple Quantum Well Structures and of Bulk GaAs," Appl. Phys. B28,
In this paper we report the first observation of saturation of the
exciton absorption in GaAs:GaAlAs multiple quantum well (MQW) structures at 300 K. We
study the comparison of this saturation with that seen in GaAs in which we also resolve
the excitonic saturation contribution at 300 K.