||D. A. B. Miller, S. D. Smith and A.
Johnston, "Optical Bistability and Transistor Action in a Semiconductor
Crystal," Proc. 4th National Quantum Electronics Conference, Edinburgh, 1979 (ed. B.
S. Wherrett) (Wiley London, 1980), 241-244.
Reports the first realisation of an
optically bistable device in a semiconductor crystal as well as observation of
differential gain both in one beam and, via the modulation of the transmission of one
laser beam by a second, in a two beam system. This latter device is analogous to the three
terminal transistor and, operating by transferred phase thickness, the authors term it a
'transphasor'. The basic optical element is a crystal of pure InSb 580 mu m thick with
polished plane parallel faces held at 5K in a helium cryostat