Electronic Devices

Bent, Dutton, Harris, Howe, Mitra, Ng, Nishi, Pianetta, Plummer, Pop, Saraswat, Wong, Wong

New and innovative materials, structures, process, and design technologies are explored for nanoelectronics, energy, environment, and bio-medical applications. Examples include:

  • Silicon, germanium, and III-V compound semiconductor devices, metal gate/high-k MOS, and interconnects for nanoelectronics;
  • Device applications of new materials such as carbon (carbon nanotube, graphene), two-dimensional (2D) layered materials (e.g. MoS2, BN) and semiconductor nanowires;
  • Memory devices such as Flash, phase change memory, metal oxide resistive switching memory;
  • New fabrication technologies for scaling logic and memory devices into the nanometer regime, 3D-integrated circuits with multiple layers of heterogeneous devices, metal, and optical interconnections;
  • Compact modeling, technology computer aided design, and ab initio modeling of electronic materials and devices;
  • Magnetic nanotechnologies and information storage.

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Simon S. Wong

Simon S. Wong Professor

Allen 203 (4070)
Website

Wang, June Administrator

Allen 203 (4070)
724-1342
junewang@ee.stanford.edu

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